Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"120(W)","Continuous Drain Current":"61(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"120(W)","Continuous Drain Current":"61(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"30A (Tc)","Gate Charge (Qg) @ Vgs":"92nC @ 10V","Product Photos":"TO-252-3","PCN Assembly/Origin":"D-Pak Leadframe BOM Update 26/Sep/2014","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circuits...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"55 V","Transistor Polarity":"N-Channel","Rds On - Drain-Source Resistance":"12 mOhms","Brand":"International Rectifier","Id - Continuous Drain Current":"61 A","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"120 W","Packaging":"Reel","Product Category":"MOSFET","Qg - Gate Charge":"61 nC","Package / Case":"DPAK-3","Maximum Operating Temperature":"+ 175 C","RoHS":"Details","Manufacturer":"International Rectifier"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"30A (Tc)","Gate Charge (Qg) @ Vgs":"92nC @ 10V","Product Photos":"TO-252-3","PCN Assembly/Origin":"D-Pak Leadframe BOM Update 26/Sep/2014","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circuits...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"55 V","Transistor Polarity":"N-Channel","Rds On - Drain-Source Resistance":"12 mOhms","Brand":"International Rectifier","Id - Continuous Drain Current":"61 A","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"120 W","Packaging":"Reel","Product Category":"MOSFET","Qg - Gate Charge":"61 nC","Package / Case":"DPAK-3","Maximum Operating Temperature":"+ 175 C","RoHS":"Details","Manufacturer":"International Rectifier"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Rise Time":"51 ns","Typical Turn-Off Delay Time":"83 ns","Description":"Value","Maximum Continuous Drain Current":"61 A","Package":"3DPAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b116 V","Typical Turn-On Delay Time":"7.4 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"14@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"100 ns"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"30A (Tc)","Gate Charge (Qg) @ Vgs":"92nC @ 10V","Product Photos":"TO-252-3","PCN Assembly/Origin":"Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"14 mOhm @ 30A, 10V","Datasheets":"IRLR3915PbF, IRLU3915PbF"...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"200 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0140 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"240 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"200 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0140 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"240 A","Channel Type":"N-CHAN...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"30A (Tc)","Gate Charge (Qg) @ Vgs":"92nC @ 10V","Product Photos":"TO-252-3","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"14 mOhm @ 30A, 10V","Datasheets":"IRLR3915PbF, IRLU3915PbF","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packag...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Rise Time":"51 ns","Typical Turn-Off Delay Time":"83 ns","Description":"Value","Maximum Continuous Drain Current":"61 A","Package":"3DPAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b116 V","Typical Turn-On Delay Time":"7.4 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"14@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"100 ns"}...