IRLR3915TR - International Rectifier

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 61

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 43 A

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 30

IDM Pulsed Drain Current 240

PD @TC = 25°C Power Dissipation 120 W

Linear Derating Factor 0.77 W/°C

VGS Gate-to-Source Voltage ± 16 V

EAS Single Pulse Avalanche Energy200 mJ

EAS (6 sigma) Single Pulse Avalanche Energy Tested Value600

IAR Avalanche CurrentSee Fig.12a, 12b, 15, 16 A

EAR Repetitive Avalanche EnergymJ

TJOperating Junction and -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

IRLR3915PbF

IRLU3915PbF

HEXFET® Power MOSFET

Absolute Maximum Ratings

Parameter Typ. Max. Units

RθJC Junction-to-Case ––– 1.3

RθJA Junction-to-Ambient (PCB mount)––– 50 °C/W

RθJA Junction-to-Ambient––– 110

Thermal Resistance

VDSS = 55V

RDS(on) = 14mΩ

ID = 30A

10/01/10

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HEXFET(R) is a registered trademark of International Rectifier.

Description

This HEXFET® Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this product are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating. These features

combine to make this design an extremely efficient

and reliable device for use in a wide variety of

applications.

Features

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

D-Pak

IRLR3915PbF

I-Pak

IRLU3915PbF

Lead-Free

PD - 95090B

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Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode) ––– ––– p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 30A, VGS = 0V 

trr Reverse Recovery Time ––– 62 93 ns TJ = 25°C, IF = 30A, VDD = 25xjkl V

Qrr Reverse Recovery Charge ––– 110 170 nC di/dt = 100A/µs 

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on) Static Drain-to-Source On-Resistance ––– 12 14 VGS = 10V, ID = 30A 

––– 14 17 VGS = 5.0V, ID = 26A 

VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = 10V, ID = 250µA

gfs Forward Transconductance 42 ––– ––– S VDS = 25V, ID = 30A

––– ––– 20 µA VDS = 55V, VGS = 0V

––– ––– 250 VDS = 55V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V

Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V

QgTotal Gate Charge ––– 61 92 ID = 30A

Qgs Gate-to-Source Charge ––– 9.0 14 nC VDS = 44V

Qgd Gate-to-Drain ("Miller") Charge ––– 17 25 VGS = 10V

td(on) Turn-On Delay Time ––– 7.4 ––– VDD = 28V

trRise Time ––– 51 ––– ID = 30A

td(off) Turn-Off Delay Time ––– 83 ––– RG = 8.5Ω

tfFall Time ––– 100 ––– VGS = 10V 

Between lead,

––– ––– nH 6mm (0.25in.)

from package

and center of die contact

Ciss Input Capacitance ––– 1870 ––– VGS = 0V

Coss Output Capacitance ––– 390 ––– VDS = 25V

Crss Reverse Transfer Capacitance ––– 74 ––– pF ƒ = 1.0MHz, See Fig. 5

Coss Output Capacitance ––– 2380 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

Coss Output Capacitance ––– 290 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz

Coss eff. Effective Output Capacitance ––– 540 ––– VGS = 0V, VDS = 0V to 44V

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

LDInternal Drain Inductance

LSInternal Source Inductance ––– –––

IGSS

4.5

7.5

IDSS Drain-to-Source Leakage Current

Source-Drain Ratings and Characteristics

240

mΩ

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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1 110 100 1000

VDS, Drain-to-Source Voltage (V)

0.001

0.01

0.1

100

1000

10000

ID, Drain-to-Source Current (A)

2.0V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP 15V

10V

5.0V

3.0V

2.7V

2.5V

2.25V

BOTTOM 2.0V

0.1 110 100 1000

VDS, Drain-to-Source Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

2.0V

20µs PULSE WIDTH

Tj = 175°C

VGS

TOP 15V

10V

5.0V

3.0V

2.7V

2.5V

2.25V

BOTTOM 2.0V

1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0

VGS, Gate-to-Source Voltage (V)

0.10

1.00

10.00

100.00

1000.00

ID, Drain-to-Source Current (Α)

TJ = 25°C

TJ = 175°C

VDS = 25V

20µs PULSE WIDTH

Fig 4. Typical Forward Transconductance

vs. Drain Current

0 102030405060

ID,Drain-to-Source Current (A)

Gfs, Forward Transconductance (S)

TJ = 25°C

TJ = 175°C

IRLR/U3915PbF

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

110 100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C, Capacitance(pF)

VGS

= 0V, f = 1 MHZ

Ciss

= C

+ C

gd, C

SHORTED

Crss

= C

Coss

= C

+ C

Coss

Crss

Ciss

010 20 30 40 50 60 70

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

D30A

V = 11V

V = 27V

V = 44V

0.1

100

1000

0.0 0.5 1.0 1.5 2.0

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 175 C

J°

T = 25 C

J°

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

IRLR/U3915PbF

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current vs.

Case Temperature

25 50 75 100 125 150 175

T , Case Temperature ( C)

I , Drain Current (A)

LIMITED BY PACKAGE

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJC C

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 10. Normalized On-Resistance

vs. Temperature

-60 -40 -20 020 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

61A

IRLR/U3915PbF

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Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

Fig 14. Threshold Voltage vs. Temperature

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

VGS

25 50 75 100 125 150 175

100

200

300

400

500

Starting Tj, Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

12A

21A

30A

-75 -50 -25 025 50 75 100 125 150 175 200

TJ , Temperature ( °C )

0.5

1.0

1.5

2.0

VGS(th) Gate threshold Voltage (V)

ID = 250µA

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Fig 15. Typical Avalanche Current vs.Pulsewidth

Fig 16. Maximum Avalanche Energy

vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

4. PD (ave) = Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. Iav = Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

Tjmax (assumed as 25°C in Figure 15, 16).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Iav = 2DT/ [1.3·BV·Zth]

EAS (AR) = PD (ave)·tav

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

0.1

100

1000

Avalanche Current (A)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs

avalanche pulsewidth, tav

assuming ∆Tj = 25°C due to

avalanche losses

0.01

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

100

120

140

160

180

200

220

EAR , Avalanche Energy (mJ)

TOP Single Pulse

BOTTOM 10% Duty Cycle

ID = 30A

IRLR/U3915PbF

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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P. W .

Period

* VGS = 5V for Logic Level Devices







RGVDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T



90%

10%

d(on)

d(off)

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

10V

VDD

Fig 18a. Switching Time Test Circuit

Fig 18b. Switching Time Waveforms

IRLR/U3915PbF

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D-Pak (TO-252AA) Part Marking Information

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

INT ERNATIONAL

AS SEMBLED ON WW 16, 2001

IN THE ASSEMBLY LINE "A"

Note: "P" in ass embly line position

EXAMPLE:

LOT CODE 1234

THIS IS AN IRF R120

WIT H AS S E MB L Y

indi cates "L ead-F ree"

PRODUCT (OPTIONAL)

P = DES IGNAT E S LE AD-FR EE

A = AS S E MB L Y S I T E COD E

PART NUMBER

WE E K 16

DAT E CODE

YEAR 1 = 2001

RECTIFIER

INT ERNAT IONAL

LOGO

LOT CODE

AS S E MB L Y

3412

IR F R120

116A

LINE A

RECT IFIER

LOGO

IR F R120

AS S E MB L Y

LOT CODE

YEAR 1 = 2001

DAT E CODE

PART NUMBER

WE E K 16

"P" in assembly line position indicates

"L ead- F r ee" quali fi cation to the cons umer -l evel

P = DES IGNAT E S LE AD-FR EE

PRODUCT QUALIFIED TO THE

CONSUME R LE VEL (OPT IONAL )

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

IRLR/U3915PbF

10 www.irf.com

I-Pak (TO-251AA) Package Outline

Dimensions are shown in millimeters (inches)

I-Pak (TO-251AA) Part Marking Information

LINE A

LOGO

INT ERNAT IONAL

RECTIFIER

PRODUCT (OPT IONAL)

P = DESIGNATES LEAD-FREE

A = AS S E MB L Y S IT E CODE

IRF U120

PART NUMBER

WEEK 19

DAT E CODE

YEAR 1 = 2001

RECTIFIER

INT ERNAT IONAL

LOGO

ASSEMBLY

LOT CODE

IR F U120

DAT E CODE

PART NUMBER

LOT CODE

AS S E MB L Y

56 78

YEAR 1 = 2001

WEEK 19

119A

indicates Lead-Free"

ASS EMBLED ON WW 19, 2001

IN THE ASSEMBLY LINE "A"

Note: "P" in as s embly line pos ition

EXAMPLE:

WI T H AS S E MB L Y

THIS IS AN IRF U120

LOT CODE 5678

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

IRLR/U3915PbF

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Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 10/2010

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Limited by TJmax, starting TJ = 25°C,

L = 0.45mH, RG = 25Ω, IAS = 30A, VGS =10V.

Part not recommended for use above this

value.

ISD ≤ 30A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

Notes:

 Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS .

 Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

 This value determined from sample failure population. 100%

tested to this value in production.

 When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to

application note #AN-994.

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

16.3 ( .641 )

15.7 ( .619 )

8.1 ( .318 )

7.9 ( .312 )

12.1 ( .476 )

11.9 ( .469 ) FEED DIRECTION FEED DIRECTION

16.3 ( .641 )

15.7 ( .619 )

TRR TRL

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

16 mm

13 INCH