Product Datasheet Search Results:
11 Pages, 346 KB, Original- IRG4BC20SD-SPBF
- Infineon Technologies Ag
- Trans IGBT Chip N-CH 600V 19A 60000mW 3-Pin(2+Tab) D2PAK Tube
11 Pages, 190 KB, Original- IRG4BC20SD
- International Rectifier
- IGBT W/DIODE 600V 19A TO-220AB - IRG4BC20SD
10 Pages, 301 KB, Original- IRG4BC20SDPBF
- International Rectifier
- IGBT N-CH W/DIO 600V 19A TO220AB - IRG4BC20SDPBF
11 Pages, 262 KB, Original- IRG4BC20SD-S
- International Rectifier
- IGBT W/DIODE 600V 19A D2PAK - IRG4BC20SD-S
10 Pages, 277 KB, Original- IRG4BC20SDS
- International Rectifier
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V,
11 Pages, 346 KB, Original- IRG4BC20SD-SPBF
- International Rectifier
- IGBT N-CH W/DIODE 600V 19A D2PAK - IRG4BC20SD-SPBF
11 Pages, 346 KB, Original- IRG4BC20SD-STRL
- International Rectifier
- 19 A, 600 V, N-CHANNEL IGBT
11 Pages, 346 KB, Original- IRG4BC20SD-STRLPBF
- International Rectifier
- 19 A, 600 V, N-CHANNEL IGBT
11 Pages, 346 KB, Original- IRG4BC20SD-STRR
- International Rectifier
- 19 A, 600 V, N-CHANNEL IGBT
11 Pages, 346 KB, Original- IRG4BC20SD-STRRPBF
- International Rectifier
- 19 A, 600 V, N-CHANNEL IGBT
Product Details Search Results:
Infineon.com/IRG4BC20SD-SPBF
{"Collector Current (DC) ":"19(A)","Operating Temperature (Min)":"-55C","Collector-Emitter Voltage":"600(V)","Mounting":"Surface Mount","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Configuration":"Single","Pin Count":"2 +Tab"}...
1566 Bytes - 01:23:23, 23 November 2024
Irf.com/IRG4BC20SD
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"19A","Switching Energy":"320\u00b5J (on), 2.58mJ (off)","Vce(on) (Max) @ Vge, Ic":"1.6V @ 15V, 10A","Td (on/off) @ 25\u00b0C":"62ns/690ns","Input Type":"Standard","Package / Case":"TO-220-3","Gate Charge":"27nC","Product Photos":"TO-220AB PKG","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (trr)":"37ns","Datasheets":"IRG4BC20SD","Standard Package":"50","Test Condition":"480V, 10A, 50 Ohm, 15V","IGBT ...
1713 Bytes - 01:23:23, 23 November 2024
Irf.com/IRG4BC20SDPBF
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"19A","Switching Energy":"320\u00b5J (on), 2.58mJ (off)","Vce(on) (Max) @ Vge, Ic":"1.6V @ 15V, 10A","Td (on/off) @ 25\u00b0C":"62ns/690ns","Input Type":"Standard","Package / Case":"TO-220-3","Gate Charge":"27nC","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"Alternate Diode Supplier 01/Apr/2014 Alternate Diode Supplier Retraction 04/Apr/2014","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (tr...
1910 Bytes - 01:23:23, 23 November 2024
Irf.com/IRG4BC20SD-S
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"19A","Switching Energy":"320\u00b5J (on), 2.58mJ (off)","Vce(on) (Max) @ Vge, Ic":"1.6V @ 15V, 10A","Td (on/off) @ 25\u00b0C":"62ns/690ns","Input Type":"Standard","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Gate Charge":"27nC","Product Photos":"TO-263","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (trr)":"37ns","Datasheets":"IRG4BC20SD-S","Standard Package":"50","Test Conditio...
1774 Bytes - 01:23:23, 23 November 2024
Irf.com/IRG4BC20SD-SPBF
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"19A","Switching Energy":"320\u00b5J (on), 2.58mJ (off)","Vce(on) (Max) @ Vge, Ic":"1.6V @ 15V, 10A","Td (on/off) @ 25\u00b0C":"62ns/690ns","Input Type":"Standard","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Gate Charge":"27nC","Product Photos":"TO-263","PCN Assembly/Origin":"Alternate Diode Supplier 01/Apr/2014 Alternate Diode Supplier Retraction 04/Apr/2014","Voltage - Collector Emitter Breakdown (Max)":"...
1969 Bytes - 01:23:23, 23 November 2024
Irf.com/IRG4BC20SD-STRL
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"PLASTIC, D2PAK-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Turn-off Time-Nom (toff)":"1780 ns","Collector Current-Max (IC)":"19 A","Collector-emitter Voltage-Max":"600 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"99 ns","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Ter...
1413 Bytes - 01:23:23, 23 November 2024
Irf.com/IRG4BC20SD-STRLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Turn-off Time-Nom (toff)":"1780 ns","Collector Current-Max (IC)":"19 A","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"99 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL","T...
1501 Bytes - 01:23:23, 23 November 2024
Irf.com/IRG4BC20SD-STRR
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"PLASTIC, D2PAK-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Turn-off Time-Nom (toff)":"1780 ns","Collector Current-Max (IC)":"19 A","Collector-emitter Voltage-Max":"600 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"99 ns","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Ter...
1413 Bytes - 01:23:23, 23 November 2024
Irf.com/IRG4BC20SD-STRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Turn-off Time-Nom (toff)":"1780 ns","Collector Current-Max (IC)":"19 A","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"99 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL","T...
1499 Bytes - 01:23:23, 23 November 2024
