IRG4BC20SD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
FeaturesFeatures
FeaturesFeatures
Features
E
G
n-channel
C
VCES = 600V
VCE(on) typ. = 1.4V
@VGE = 15V, IC = 10A
Standard Speed IGBT
Benefits
PD -91794
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 19
IC @ TC = 100°C Continuous Collector Current 10
ICM Pulsed Collector Current 38 A
ILM Clamped Inductive Load Current 38
IF @ TC = 100°C Diode Continuous Forward Current 7.0
IFM Diode Maximum Forward Current 38
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
TJOperating Junction and -55 to +150
TSTG Storage Temperature Range °C
Absolute Maximum Ratings
W
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2
D Pak
• Extremely low voltage drop 1.4Vtyp. @ 10A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard D2Pak package
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
Parameter Typ. Max. Units
RqJC Junction-to-Case - IGBT ––– 2.1
RqJC Junction-to-Case - Diode ––– 3.5 °C/W
RqJA Junction-to-Ambient ( PCB Mounted,steady-state)* – –– 8 0
Wt Weight 1.44 ––– g (oz)
Thermal Resistance
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
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Parameter Min. Typ. Max. Units Conditions
QgTotal Gate Charge (turn-on) — 27 40 IC = 10A
Qge Gate - Emitter Charge (turn-on) — 4.3 6.5 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) — 10 15 VGE = 15V
td(on) Turn-On Delay Time — 62 — TJ = 25°C
trRise Time — 32 — ns IC = 10A, VCC = 480V
td(off) Turn-Off Delay Time — 690 1040 VGE = 15V, RG = 50W
tfFall Time — 480 730 Energy losses include "tail" and
Eon Turn-On Switching Loss — 0.32 — diode reverse recovery.
Eoff Turn-Off Switching Loss — 2.58 — mJ See Fig. 9, 10, 11,18
Ets Total Switching Loss — 2.90 4.5
td(on) Turn-On Delay Time — 64 — TJ = 150°C, See Fig. 10,11, 18
trRise Time — 35 — ns IC = 10A, VCC = 480V
td(off) Turn-Off Delay Time — 980 — VGE = 15V, RG = 50W
tfFall Time — 800 — Energy losses include "tail" and
Ets Total Switching Loss — 4.33 — mJ diode reverse recovery.
LEInternal Emitter Inductance — 7.5 — nH Measured 5mm from package
Cies Input Capacitance — 550 — VGE = 0V
Coes Output Capacitance — 39 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 7.1 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 37 55 ns T J = 25°C See Fig.
—5590 T
J
= 125°C 14 IF = 8.0A
Irr Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig.
— 4.5 8.0 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig.
— 124 360 TJ = 125°C 16 di/dt = 200Aµs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.
During tb— 210 — TJ = 125°C 17
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 6 00 — — V V GE = 0V, IC = 250µA
DV(BR)CES/DTJTemperature Coeff. of Breakdown Voltage — 0.75 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 1.40 1.6 IC = 10A VGE = 15V
— 1.85 — V IC = 19A See Fig. 2, 5
— 1.44 — IC = 10A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
DVGE(th)/DTJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance 2.0 5.8 — S VCE = 100V, IC = 10A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 1700 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13
— 1.3 1.6 IC = 8.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 n A V GE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IRG4BC20SD-S
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0.1 1 10 100
0.0
1.0
2.0
3.0
f, Frequency (KHz)
LOAD CURRENT (A)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
60% of rated
v olta g e
I
Ideal diodes
Square wave:
For both:
Duty cycle: 50%
T = 125°C
T = 90 ° C
G ate drive as specified
sink
J
P o w e r Dis s ipa tion = W
1.7
1
10
100
5 6 7 8 9 10 11 12
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5µs PULSE WIDTH
CC
T = 25 C
Jo
T = 150 C
Jo
1
10
100
0.0 1.0 2.0 3.0 4.0
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
V = 15V
20µs PULSE WIDTH
GE
T = 25 C
J°
T = 150 C
J°
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
25 50 75 100 125 150
0
5
10
15
20
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C°-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A5
C
I = A10
C
I = A20
C
5.0 A
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D =t / t
2. Peak T=P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectan
g
ular Pulse Duration
(
sec
)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
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-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J°
R =
V = 15V
V = 480V
G
GE
CC
I = A
20
C
I = A
10
C
I = A
5
C
010 20 30 40 50
2.7
2.8
2.9
3.0
R , Gate Resistance
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 10A
CC
GE
J
C
°
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0 5 10 15 20 25 30
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V= 400V
I = 10A
CC
C
1 10 100
0
200
400
600
800
1000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies ge gc , ce
res gc
oes ce gc
Cies
Coes
Cres
50W
RG, Gate Resistance (W)
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0 4 8 12 16 20
0
2
4
6
8
10
12
14
I , Collector Current (A)
Total Switching Losses (mJ)
C
R =
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
°
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
0.1
1
10
100
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
FM
F
Instantaneous Forward Current - I (A)
Forward Volta
g
e Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current Fig. 12 - Turn-Off SOA
1
10
100
1 10 100 1000
V = 20V
T = 125 C
GE
Jo
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
SAFE OPERATING AREA
50W
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Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt
0
100
200
300
400
500
100 1000
f
d i /d t - (A /µ s )
RR
Q - (nC)
I = 1 6A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
100
1000
10000
100 1000
f
d i /d t - (A /µ s )
d i(re c )M /d t - ( A /µ s)
I = 1 6 A
I = 8 .0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
20
40
60
80
100
100 1000
f
d i /dt - (A /µs )
t - (n s )
rr
I = 16 A
I = 8.0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
1
10
100
100 1000
f
d i /dt - (A /µ s)
I - ( A )
IRRM
I = 1 6 A
I = 8 .0A
I = 4.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
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Same t
y
pe
device as
D.U.T.
D.U.T.
430µF
80%
of Vce
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
∫
Vce ie dt
t2
t1
5% Vc e
Ic
Ipk
Vcc 10% Ic
Vce
t1 t2
DUT VOLTAGE
AND CURRENT
GATE VOLTAGE D.U.T.
+V
g
10% +V
g
90% Ic
tr
td(on)
DIOD E REVE RSE
RECO VERY ENERG Y
tx
E on =
∫
Erec = t4
t3
Vd id dt
t4
t3
DIODE RECOVERY
WAVEFORMS
Ic
Vpk
10% Vc c
Irr
10% Irr Vcc
trr
∫
Qrr = trr
tx
id d t
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Vd Ic dt
Vce Ic dt
Ic dt
t=5µs
d(on)
t
t
f
t
r
90%
td(off)
10%
90%
10%
5%
C
I
C
E
on
E
off
ts on off
E = (E +E )
V
V
ge
IRG4BC20SD-S
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V
g
GATE SIG NAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0 t1 t2
D.U.T.
V *
c
50V
L
1000V
6000µF
100V
Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit
RL=480V
2 X IC @25°C
0 - 480V
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
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Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 50W (figure 19)
Pulse width £ 80µs; duty factor £ 0.1%.
Pulse width 5.0µs, single shot.
10.16 (.400)
R EF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF .
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5.28 (.208)
4.78 (.188)
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15.49 (.610)
14.73 (.580)
3X 0.93 (.037)
0.69 (.027)
5.08 (.200)
3X 1.40 (.055)
1.14 (.045)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MAX.
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 D IM E NS ION IN G & TOLE RA N C IN G P E R A NS I Y 14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMEN SIONS DO NOT INCLUDE BURRS.
0.55 (.022)
0.46 (.018)
0 .2 5 ( .0 1 0) M B A M MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
LE AD ASSIGNM ENTS
1 - GAT E
2 - DRAIN
3 - SOUR CE
2.5 4 (.1 00)
2X
D2Pak Package Outline
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 9/98
