Product Datasheet Search Results:
5 Pages, 181 KB, Scan- IRFP360
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 56 KB, Original- IRFP360
- Intersil Corporation
- 23A, 400V, 0.200 ?, N-Channel Power MOSFET
1 Pages, 120 KB, Scan- IRFP360
- International Rectifier
- TO-247 N-Channel Plastic Package HEXFETs
8 Pages, 152 KB, Original- IRFP360LC
- International Rectifier
- HEXFET Power MOSFET
8 Pages, 152 KB, Original- IRFP360LCPBF
- International Rectifier
- 400V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
6 Pages, 164 KB, Scan- IRFP360PBF
- International Rectifier
- 400V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
2 Pages, 46 KB, Original- IRFP360
- Ixys Corporation
- 400V fast recovery epitaxial diode (FRED)
Product Details Search Results:
Siliconix_vishay/IRFP360LCPBF
806 Bytes - 03:34:08, 28 October 2024
Siliconix_vishay/IRFP360PBF
792 Bytes - 03:34:08, 28 October 2024
Vishay.com/IRFP360
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"200 mOhm @ 14A, 10V","FET Feature":"Standard","Product Photos":"TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"500","Supplier Device Package":"TO-247-3","Other Names":"*IRFP360","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRFP360","Power - Max":"280W","Package / Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"400...
1562 Bytes - 03:34:08, 28 October 2024
Vishay.com/IRFP360LC
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"3400pF @ 25V","Series":"-","Standard Package":"500","Supplier Device Package":"TO-247-3","Datasheets":"IRFP360LC","Rds On (Max) @ Id, Vgs":"200 mOhm @ 14A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"280W","Package / Case":"TO-247-3","Mounting Type":"Through Hole","Drain to So...
1522 Bytes - 03:34:08, 28 October 2024
Vishay.com/IRFP360LCPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IRFP Series Side 1 IRFP Series Side 2","Package / Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"23A (Tc)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"TO-247-3","Rds On (Max) @ Id, Vgs":"200 mOhm @ 14A, 10V","Datasheets":"IRFP360LC","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"25","Drain to Source Voltage (Vdss)":"400V","Online Cata...
1759 Bytes - 03:34:08, 28 October 2024
Vishay.com/IRFP360PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IRFP Series Side 1 IRFP Series Side 2","Package / Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"23A (Tc)","Gate Charge (Qg) @ Vgs":"210nC @ 10V","Product Photos":"TO-247-3","PCN Assembly/Origin":"SIL-003-2014-Rev-0 14/Feb/2014","Rds On (Max) @ Id, Vgs":"200 mOhm @ 14A, 10V","Datasheets":"IRFP360","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"25"...
1797 Bytes - 03:34:08, 28 October 2024
Vishay_pcs/IRFP360PBF
{"Category":"Power MOSFET","Dimensions":"15.87 x 5.31 x 20.82 mm","Maximum Continuous Drain Current":"23 A","Width":"5.31 mm","Maximum Drain Source Voltage":"400 V","Package Type":"TO-247AC","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 210 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"18 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"4500 pF @ 25 V","...
1935 Bytes - 03:34:08, 28 October 2024
Zilog.com/IRFP360
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"23 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"92 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...
1468 Bytes - 03:34:08, 28 October 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRFP360.pdf | 0.04 | 1 | Request |
