MegaMOSTMFET IRFP 360 VDSS = 400 V = 23 A ID25 RDS(on) = 0.20 N-Channel Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C; RGS = 1.0 M 400 400 V V VGS VGSM Continuous Transient 20 30 V V ID25 ID100 IDM IAR TC = 25C TC = 100C TC = 25C, pulse width limited by TJM 23 14 92 23 A A A A EAR TC = 25C 30 mJ dv/dt IS IDM, di/dt TJ 150C, RG = 2 5 V/ns PD TC = 25C 300 W -55 ... +150 150 -55 ... +150 C C C 1.13/10 Nm/lb.in. 6 g 300 C TJ TJM T stg Md Mounting torque Weight Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features * * * * * Fast switching times International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commuting dv/dt rating Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 A 400 VGS(th) VDS = VGS, ID = 250 A 2 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V V 4 V 100 nA 25 250 A A 0.20 * * * * Advantages * R DS(on) TJ = 25C TJ = 125C VGS = 10 V, ID = 14A DC choppers Motor Controls Switch-mode and resonant-mode Uninterruptable power supplies (UPS) * * Space savings High power density Easy to mount with 1 screw (isolated mounting screw hole) Pulse test, t 300 s, duty cycle d 2% This data reflects the objective technical specification and characterization data from engineering lots. IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 95509A (4/95) 1-2 IRFP 360 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 14 A, pulse test Ciss C oss C rss VGS = 0 V, VDS = 25 V, f = 1 MHz t d(on) VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 tr td(off) RG = 4.3 (External) tf Q g(on) Q gs 14 TO-247 AD Outline S 4500 pF 1100 490 pF pF 24 ns 33 100 ns ns 30 ns 1 2 Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain Dim. VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 Q gd 210 30 nC nC 110 nC 0.45 R thJC 0.25 R thCK Source-Drain Diode K/W K/W Ratings and Characteristics (TJ = 25C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS= 0 23 A ISM Repetitive; pulse width limited by TJM 92 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.8 V t rr IF = IS, -di/dt = 100 A/s 420 630 ns 5.6 8.4 C Q rr (c) 2000 IXYS All rights reserved Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2