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© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 4 00 V
VDGR TJ= 25°C to 150°C; RGS = 1.0 MΩ400 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 23 A
ID100 TC= 100°C 1 4 A
IDM TC= 25°C, pulse width limited by TJM 92 A
IAR 23 A
EAR TC= 25°C 3 0 mJ
dv/dt IS≤ IDM, di/dt 5 V/ ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 3 0 0 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight 6 g
Max lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
This data reflects the objective technical specification and characterization data from engineering lots.
N-Channel Enhancement Mode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 µA 4 0 0 V
VGS(th) VDS = VGS, ID = 250 µA 2 4 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C 25 µA
VGS = 0 V TJ = 125°C 250 µA
RDS(on) VGS = 10 V, ID = 14A 0.20 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2%
IRFP 360 VDSS = 400 V
ID25 = 23 A
RDS(on) = 0.20 ΩΩ
ΩΩ
Ω
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
• Fast switching times
•International standard packages
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•High commuting dv/dt rating
Applications
•DC choppers
•Motor Controls
•Switch-mode and resonant-mode
•Uninterruptable power supplies (UPS)
Advantages
•Space savings
•High power density
•Easy to mount with 1 screw (isolated
mounting screw hole)
D (TAB)
Preliminary data
95509A (4/95)
MegaMOSTMFET
IXYS reserves the right to change limits, test conditions, and dimensions.
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 14 A, pulse test 1 4 S
Ciss 4500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1100 pF
Crss 490 pF
td(on) VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 24 ns
trRG = 4.3 Ω (External) 3 3 ns
td(off) 100 ns
tf30 ns
Qg(on) 210 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, I D = ID25 30 nC
Qgd 110 nC
RthJC 0.45 K/W
RthCK 0.25 K/W
Source-Drain Diode Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS= 0 2 3 A
ISM Repetitive; pulse width limited by TJM 92 A
VSD IF = IS, VGS = 0 V, 1. 8 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = IS, -di/dt = 100 A/µs 4 20 6 30 ns
Qrr 5.6 8.4 µC
IRFP 360
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
