Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"380(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"24(V)","Packaging":"Rail\/Tube","Power Dissipation":"380(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AD","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"50(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AC","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"50(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AC","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"50(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AC","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"180A (Tc)","Gate Charge (Qg) @ Vgs":"390nC @ 10V","Product Photos":"TO-247AC Pkg","PCN Assembly\/Origin":"AUIRFxx Series Wafer Process 29\/Jul\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"1.6 mOhm @ 180A, 10V","Datasheets":"AUIRFP2602","FET Type":"MOSFET N...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"50A (Tc)","Gate Charge (Qg) @ Vgs":"234nC @ 10V","Product Photos":"TO-247AC Pkg","PCN Assembly\/Origin":"Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"40 mOhm @ 28A, 10V","Datasheets":"IRFP260MPBF","FET Type":"MOSFET N-Channel, Me...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"560 mJ","Package Shape":"RECTANGULAR","Status":"EOL\/LIFEBUY","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTO...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"50(A)","Mounting":"Through Hole","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AC","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-247-3","Gate Charge (Qg) @ Vgs":"234nC @ 10V","Product Photos":"TO-247AC Pkg","PCN Assembly\/Origin":"Warehouse Transfer 29\/Jul\/2015","PCN Design\/Specification":"Alternative Leadframe and Die Attach 11\/Jun\/2013 Pb\/Sn\/Ag Material Update 09\/Feb\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"40 mOhm @ 28A,...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"55 mOhm @ 28A, 10V","FET Feature":"Standard","Product Photos":"TO-247","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"30","Supplier Device Package":"TO-247AD","Other Names":"IRFP260X","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRFP260","Power - Max":"280W","Package \/ Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"200V",...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"46 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"180 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IRFP Series Side 1 IRFP Series Side 2","Package \/ Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"46A (Tc)","Gate Charge (Qg) @ Vgs":"230nC @ 10V","Product Photos":"TO-247-3","Rds On (Max) @ Id, Vgs":"55 mOhm @ 28A, 10V","Datasheets":"IRFP260","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"25","Drain to Source Voltage (Vdss)":"200V","Online Catalo...