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Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 28 A, pulse test 2 4 3 4 S
Ciss 3900 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 7 60 p F
Crss 320 pF
td(on) 23 ns
trVGS = 10 V, VDS = 100 VDSS, ID = 46A 3 0 ns
td(off) RG = 4.3 Ω (External) 90 ns
tf28 ns
Qg(on) 230 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 42 nC
Qgd 110 nC
RthJC 0.45 K/W
RthCK 0.24 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 46 A
ISM Repetitive; pulse width limited by TJM 180 A
VSD IF = IS, VGS = 0 V, 1 .8 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 0.5 IS, -di/dt = 100 A/µs, VR = 100 V 2 60 5 9 0 ns
Qrr 2.34 7.2 uC
TO-247 AD (IXTH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IRFP 260
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025