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1
IRFP260PbF
PD-
95915
9/27/04
Lead-Free
IRFP260PbF
2
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IRFP260PbF
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3
IRFP260PbF
4
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IRFP260PbF
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5
IRFP260PbF
6
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IRFP260PbF
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T
. I
SD
Waveform
D.U.T
. V
DS
Waveform
Inductor Curent
D =
P.
W
.
Period
+
-
+
+
+
-
-
-
•
dv/dt controlled by R
G
•
I
SD
controlled by Duty Factor "D"
•
D.U.T.
- Device
Under
Test
Circuit
Layout
Considerations
•
Low
Stray Inductance
•
Ground Plane
•
Low
Leakage
Inductance
Current
Transformer
*
Reverse Polarity for
P-Channel
** Use P-Channel Driver for P-Channel Measurements
Peak Diode Recovery
dv/dt Test Circuit
***
V
GS
=
5.0V
for
Logic
Level
and
3V
Drive
Devices
Fig
-14
For
N
Channel
HEXFETS
IRFP260PbF
8
www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
09/04
TO-247AC
Package
Outline
Dimensions
are
shown
in
millimeters
(inches)
TO-247AC
Part
Marking
Information
EX
A
M
PLE:
A
S
S
EM
BL
ED
O
N
W
W
3
5
,
2
0
00
L
O
T
C
O
D
E
5657
W
ITH
A
SSEM
BL
Y
T
HIS
IS
A
N
IRFPE3
0
IN
THE A
S
SE
M
BLY
LIN
E
"
H
"
035H
LO
G
O
IN
T
ERN
A
T
IO
N
A
L
REC
T
IF
IER
IRFPE30
LO
T
C
O
D
E
AS
S
E
MB
L
Y
56
57
PA
RT
NUM
B
E
R
DA
T
E
CO
DE
YEA
R
0 =
20
0
0
WE
E
K
3
5
LIN
E H
No
te
:
"P" in ass
e
mbly line
posi
ti
on i
ndi
ca
tes "
Lead-
Fre
e"
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