IRFP260MPbF
HEXFET® Power MOSFET
03/01/10
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
IDM Pulsed Drain Current 200
PD @TC = 25°C Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy560 mJ
IAR Avalanche Current50 A
EAR Repetitive Avalanche Energy30 mJ
dv/dt Peak Diode Recovery dv/dt 10 V/ns
TJOperating Junction and -55 to +175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.50
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40
Thermal Resistance
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Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Description
VDSS = 200V
RDS(on) = 0.04Ω
ID = 50A
S
D
G
lAdvanced Process Technology
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lEase of Paralleling
lSimple Drive Requirements
TO-247AC
PD - 96293
lLead-Free
IRFP260MPbF
2www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V
trr Reverse Recovery Time ––– 268 402 ns TJ = 25°C, IF = 28A
Qrr Reverse Recovery Charge ––– 1.9 2.8 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
50
200
A
Starting TJ = 25°C, L = 1.5mH
RG = 25Ω, IAS = 28A.
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
ISD ≤ 28A, di/dt ≤ 486A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.04 ΩVGS = 10V, ID = 28A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 27 ––– ––– S VDS = 50V, ID = 28A
––– ––– 25 µA VDS = 200V, VGS = 0V
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– ––– 234 ID = 28A
Qgs Gate-to-Source Charge ––– ––– 38 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 110 VGS = 10V
td(on) Turn-On Delay Time ––– 17 ––– VDD = 100V
trRise Time ––– 60 ––– ID = 28A
td(off) Turn-Off Delay Time ––– 55 ––– RG = 1.8Ω
tfFall Time ––– 48 ––– VGS = 10V
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 4057 ––– VGS = 0V
Coss Output Capacitance ––– 603 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 161 ––– ƒ = 1.0MHz
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
5.0
13
IDSS Drain-to-Source Leakage Current
IRFP260MPbF
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0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 175 C
J°
T = 25 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
50A
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFP260MPbF
4www.irf.com
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
110 100 1000
VDS
, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
6000
7000
8000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS
= 0V, f = 1 MHZ
Ciss = C
gs + C
gd, Cds SHORTED
Crss = C
gd
Coss
= C
ds + C
gd
050 100 150 200
0
4
8
12
16
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D28A
V = 40V
DS
V = 100V
DS
V = 160V
DS
0.1
1
10
100
1000
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
IRFP260MPbF
www.irf.com 5
RD
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VGS
RG
D.U.T.
10V
+
-
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VGS
RG
D.U.T.
10V
VDD
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRFP260MPbF
6www.irf.com
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
500
1000
1500
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
11A
20A
28A
IRFP260MPbF
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRFP260MPbF
8www.irf.com
TO-247AC Part Marking Information
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2010
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