Product Datasheet Search Results:
2 Pages, 127 KB, Original- IRFD123
- Motorola / Freescale Semiconductor
- (IRFD120) TMOS Field Effect Transistor / Dual In-Line Package
2 Pages, 325 KB, Original- IRFD123
- General Electric Solid State
- (IRFD122) Field Effect Power Transistor
2 Pages, 119 KB, Scan- IRFD123
- General Electric
- Power Transistor Data Book 1985
5 Pages, 173 KB, Scan- IRFD123
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 170 KB, Scan- IRFD123R
- Harris Semiconductor
- Power MOSFET Data Book 1990
8 Pages, 265 KB, Original- IRFD123
- International Rectifier
- N-Channel Power MOSFETs
1 Pages, 41 KB, Original- IRFD123R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
67 Pages, 163 KB, Original- IRFD123(R)
- Toshiba
- Power MOSFETs Cross Reference Guide
10 Pages, 1840 KB, Original- IRFD123
- Vishay Semiconductors
- MOSFET N-Chan 100V 1.3 Amp MOSFET N-Chan 100V 1.3 Amp
9 Pages, 948 KB, Original- IRFD123PBF
- Vishay [siliconix]
- MOSFET N-CH 100V 1.3A 4-DIP - IRFD123PBF
Product Details Search Results:
Various/IRFD123
{"C(iss) Max. (F)":"450p","Absolute Max. Power Diss. (W)":"1.0","V(BR)DSS (V)":"80","g(fs) Max, (S) Trans. conduct,":"1.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"400m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"4.4","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"0.9","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"600m","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-250va...
1263 Bytes - 19:19:53, 16 December 2024
Various/IRFD123R
{"C(iss) Max. (F)":"450p","Absolute Max. Power Diss. (W)":"1.0","V(BR)DSS (V)":"80","g(fs) Max, (S) Trans. conduct,":"1.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"400m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"4.4","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"0.9","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"600m","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-250va...
1266 Bytes - 19:19:53, 16 December 2024
Vishay.com/IRFD123
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"HD-1, SIMILAR TO MO-004AN, DIP-4","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE WITH BUILT-IN DIODE","Number of Terminals":"3","Number of Elements":"1"}...
1135 Bytes - 19:19:53, 16 December 2024
Vishay.com/IRFD123PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)D Series Side 1 IR(F,L)D Series Side 2","Package / Case":"4-DIP (0.300\", 7.62mm)","Current - Continuous Drain (Id) @ 25\u00b0C":"1.3A (Ta)","Gate Charge (Qg) @ Vgs":"16nC @ 10V","Product Photos":"4-DIP","Rds On (Max) @ Id, Vgs":"270 mOhm @ 780mA, 10V","Datasheets":"IRFD123","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"2,500","Drain to Source Voltage (Vds...
1758 Bytes - 19:19:53, 16 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| SKIIP613GD123-3DULV3.pdf | 0.09 | 1 | Request | |
| SKM22GD123D.pdf | 0.61 | 1 | Request | |
| SKM40GD123D.pdf | 0.65 | 1 | Request | |
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| SKM100GD123D.pdf | 0.16 | 1 | Request | |
| SK20GD123.pdf | 0.60 | 1 | Request | |
| SKIIP613GD1233DULV3.pdf | 0.09 | 1 | Request | |
| SKM75GD123DL.pdf | 0.67 | 1 | Request | |
| SKM75GD123D.pdf | 0.67 | 1 | Request | |
| D1230N16K.pdf | 0.22 | 1 | Request | |
| D1230N.pdf | 0.22 | 1 | Request | |
| D1230N18K.pdf | 0.22 | 1 | Request |
