DO) Ral MOS [S| 1P IRFD122,123 FIELD EFFECT POWER TRANSISTOR jj AMPERES RDS(ON) = 9.40 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear CASE STYLE 4-PIN DIP transfer characteristics makes it well suited for many linear DIMENSIONS ARE IN INCHES AND (MILLIMETERS) applications such as audio amplifiers and servo motors. Features ~{ D sounce e Polysilicon gate Improved stability and reliability pow e No secondary breakdown Excellent ruggedness Lone (622) we Ultra-fast switching Independent of temperature ga Voltage controlled High transconductance Ta e Low input capacitance Reduced drive requirement ooo roared fk r e Excellent thermal stability Ease of paralleling 0.022 (0.86) 2 0.100 (2.54) maximum ratings (T, = 25C) (unless otherwise specified) RATING SYMBOL IRFD122 IRFD123 UNITS Drain-Source Voltage Voss 100 60 Volts Drain-Gate Voltage, Res = 1M. VpGR 100 60 Volts Continuous Drain Current @ Ta = 25C Ip 1.1 1.1 A Ta = 100C") 0.70 0.70 A Pulsed Drain Current? lpm 4.4 4.4 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ T, = 25C Pp 1.0 1.0 Watts Derate Above 25C 8 8 mw/C Operating and Storage Junction Temperature Range Ty, Tste -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Ambient) Rasa 125 125 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 300 300 C (1} Device mounted to vertical pe board in free air with drain lead soldered to 0.20 in? minimum copper run area. (2) Repetitive Rating: Pulse width limited by max. junction temperature. 239electrical characteristics (Ta = 25C) (untess otherwise specified) CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRFD122 BVpss 100 _ _ Volts (Vag = OV, Ip = 250 uA) IRFD123 60 _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Ves = OV, Ta = 25C) _ _ 250 pA (Vps = Max Rating, x 0.8, Vag = OV, Ta = 125C) _ _ 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage Ta = 25C | VescTH) 2.0 _ 4.0 Volts (Vos = Vas, Ip = 250 A) On-State Drain Current | 14 _ _ A (Vag = 10V, Vps = 10V) D(ON) . Static Drain-Source On-State Resistance (Vag = 10V, Ip = 0.6A) RDS(ON) _ 0.30 0.40 Ohms Forward Transconductance (Vpg = 10V, Ip = 0.6A) Ofs 63 1.0 _ mhos dynamic characteristics Input Capacitance Vos = 0V Ciss 410 600 pF Output Capacitance Vps = 25V Coss _ 160 400 pF Reverse Transfer Capacitance f=1MHz Crss _ 40 100 pF switching characteristics* Turn-on Delay Time Vos = 30V ta(on) _ 15 _ ns Rise Time Ip = 0.6A, Ves = 15V tr 30 _ ns Turn-off Delay Time RGeEN = 500, Regs = 12.59 taioff) _ 25 _ ns Fall Time (Res (EQUIV.) = 100) tt _ 10 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 1.41 A Pulsed Source Current Ism _ _ 4.4 A Diode Forward Voltage Ig = 1.1A Vv _ 06 23 Vol (Ta = 25C, Ves = OV) SD . . olts Reverse Recovery Time ter _ 75 _ ns (Ig = 1.3A, dis/dt = 100A/us, Ta = 125C) Qrr _ 0.7 _ pc *Pulse Test: Pulse width < 300 us, duty cycle < 2% 10 tp, DRAIN CURRENT (AMPS) 0.1 Fopena IN MAY BE LIMITED BY | PULSE Ta = 25C 01 1 2 4 6 810 20 40 60 80 100 200 Vos. ORAIN-SQURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA CONDITIONS: Rog(On) CONDITIONS: Ip = 0.6 A, Vg = 10V V@s(TH) CONDITIONS: ip = 25024, Vg = Vag GS(TH} Rogion) AND Veser) NORMALIZED 40 0 40 80 120 160 Ty. JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rygion, AND Vasi1n) VS. TEMP. 240