Document Number: 90161 www.vishay.com
S10-2466-Rev. C, 25-Oct-10 1
Power MOSFET
IRFD123, SiHFD123
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
•End Stackable
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 22 mH, Rg = 25 , IAS = 2.6 A (see fig. 12).
c. ISD 9.2 A, dI/dt 110 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V) 100
RDS(on) ()V
GS = 10 V 0.27
Qg (Max.) (nC) 16
Qgs (nC) 4.4
Qgd (nC) 7.7
Configuration Single
N-Channel MOSFET
G
D
S
HVMDIP
D
SG
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package HVMDIP
Lead (Pb)-free IRFD123PbF
SiHFD123-E3
SnPb IRFD123
SiHFD123
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V TA = 25 °C ID
1.3
ATA = 100 °C 0.94
Pulsed Drain CurrentaIDM 10
Linear Derating Factor 0.0083 W/°C
Single Pulse Avalanche EnergybEAS 100 mJ
Repetitive Avalanche CurrentaIAR 1.3 A
Repetitive Avalanche EnergyaEAR 0.13 mJ
Maximum Power Dissipation TA = 25 °C PD1.3 W
Peak Diode Recovery dV/dtcdV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 90161
2S10-2466-Rev. C, 25-Oct-10
IRFD123, SiHFD123
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 120 °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 100 V, VGS = 0 V - - 25 μA
VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 0.78 Ab- - 0.27
Forward Transconductance gfs VDS = 50 V, ID = 0.78 Ab0.80 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 5
- 360 -
pFOutput Capacitance Coss - 150 -
Reverse Transfer Capacitance Crss -34-
Total Gate Charge Qg
VGS = 10 V ID = 9.2 A, VDS = 80 V
see fig. 6 and 13b
--16
nC Gate-Source Charge Qgs --4.4
Gate-Drain Charge Qgd --7.7
Turn-On Delay Time td(on)
VDD = 50 V, ID = 9.2 A
Rg = 18 , RD = 5.2 , see fig. 10b
-6.8-
ns
Rise Time tr -27-
Turn-Off Delay Time td(off) -18-
Fall Time tf -17-
Internal Drain Inductance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-4.0-
nH
Internal Source Inductance LS-6.0-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--1.3
A
Pulsed Diode Forward CurrentaISM --10
Body Diode Voltage VSD TJ = 25 °C, IS = 1.3 A, VGS = 0 Vb--2.5V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb- 130 260 ns
Body Diode Reverse Recovery Charge Qrr - 0.65 1.3 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
Document Number: 90161 www.vishay.com
S10-2466-Rev. C, 25-Oct-10 3
IRFD123, SiHFD123
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TA = 25 °C
Fig. 2 - Typical Output Characteristics, TA = 175 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
TA = 25 °C
TA = 175 °C
www.vishay.com Document Number: 90161
4S10-2466-Rev. C, 25-Oct-10
IRFD123, SiHFD123
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
TA = 25 °C
TJ = 175 °C
SINGLE PULSE
TA = 25 °C
TJ = 175 °C
SINGLE PULSE
Document Number: 90161 www.vishay.com
S10-2466-Rev. C, 25-Oct-10 5
IRFD123, SiHFD123
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
T
A
, Ambient Temperature (°C)
I
D
, Drain Current (A)
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
g
D.U.T.
10 V
+
-
V
DS
V
DD
VDS
90 %
10 %
VGS
td(on) trtd(off) tf
Thermal Response (ZthJA)
t1, Rectangular Pulse Duration (s)t1, Rectangular Pulse Duration (s)
www.vishay.com Document Number: 90161
6S10-2466-Rev. C, 25-Oct-10
IRFD123, SiHFD123
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
R
g
I
AS
0.01 Ω
t
p
D.U.T.
L
VDS
+
-V
DD
10 V
Vary t
p
to obtain
required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
QGS QGD
QG
V
G
Charge
10 V
D.U.T.
3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Document Number: 90161 www.vishay.com
S10-2466-Rev. C, 25-Oct-10 7
IRFD123, SiHFD123
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90161.
P.W. Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
Note
a. VGS = 5 V for logic level devices
VDD
Document Number: 91361 www.vishay.com
Revision: 06-Sep-10 1
Package Information
Vishay Siliconix
HVM DIP (High voltage)
Note
1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.
INCHES MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A 0.310 0.330 7.87 8.38
E 0.300 0.425 7.62 10.79
L 0.270 0.290 6.86 7.36
ECN: X10-0386-Rev. B, 06-Sep-10
DWG: 5974
0.248 [6.29]
0.240 [6.10]
0.197 [5.00]
0.189 [4.80]
0.024 [0.60]
0.020 [0.51]
0.160 [4.06]
0.140 [3.56]
0.180 [4.57]
0.160 [4.06]
4 x
0.100 [2.54] typ.
AL
0.045 [1.14]
0.035 [0.89]
2 x
0.043 [1.09]
0.035 [0.89]
0.094 [2.38]
0.086 [2.18]
0.017 [0.43]
0.013 [0.33]
0° to 15°
2 x
E min.
E max.
0.133 [3.37]
0.125 [3.18]
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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