PD - 97015 IRFD123 www.irf.com 1 06/09/05 IRFD123 2 www.irf.com IRFD123 www.irf.com 3 IRFD123 4 www.irf.com IRFD123 www.irf.com 5 IRFD123 6 www.irf.com IRFD123 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. D= Period P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig -14 For N Channel HEXFETS www.irf.com 7 IRFD123 Hexdip Package Outline Dimensions are shown in millimeters (inches) Hexdip Part Marking Information 7+,6,6$1,5)' ,17(51$7,21$/ 5(&7,),(5 /2*2 3$57180%(5 ,5)' ;;;; $66(0%/</27&2'( '$7(&2'( 3<::$ 3 /($')5((RSWLRQDO < <($5 :: :((. $ $66(0%/<6,7(&2'( Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/05 8 www.irf.com