Product Datasheet Search Results:
12 Pages, 701 KB, Original- AUIRF4104
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 40V 120A Automotive 3-Pin(3+Tab) TO-220AB Tube
12 Pages, 701 KB, Original- AUIRF4104S
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 40V 120A Automotive 3-Pin(2+Tab) D2PAK Tube
12 Pages, 379 KB, Original- IRF4104PBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 40V 120A 3-Pin(3+Tab) TO-220AB Tube
12 Pages, 379 KB, Original- IRF4104SPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 40V 120A 3-Pin(2+Tab) D2PAK Tube
15 Pages, 352 KB, Original- AUIRF4104
- International Rectifier
- MOSFET N-CH 40V 75A TO220 - AUIRF4104
15 Pages, 352 KB, Original- AUIRF4104S
- International Rectifier
- MOSFET N-CH 40V 75A D2PAK - AUIRF4104S
15 Pages, 352 KB, Original- AUIRF4104STRL
- International Rectifier
- MOSFET N-CH 40V 75A D2PAK - AUIRF4104STRL
15 Pages, 352 KB, Original- AUIRF4104STRR
- International Rectifier
- MOSFET N-CH 40V 75A D2PAK - AUIRF4104STRR
13 Pages, 262 KB, Original- IRF4104
- International Rectifier
- MOSFET N-CH 40V 75A TO-220AB - IRF4104
9 Pages, 273 KB, Original- IRF4104GPBF
- International Rectifier
- 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
13 Pages, 262 KB, Original- IRF4104L
- International Rectifier
- MOSFET N-CH 40V 75A TO-262 - IRF4104L
12 Pages, 379 KB, Original- IRF4104LPBF
- International Rectifier
- MOSFET N-CH 40V 75A TO-262 - IRF4104LPBF
Product Details Search Results:
Infineon.com/AUIRF4104
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"120(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"40(V)","Packaging":"Rail/Tube","Power Dissipation":"140(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1567 Bytes - 18:49:28, 08 November 2024
Infineon.com/AUIRF4104S
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"120(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"40(V)","Packaging":"Rail/Tube","Power Dissipation":"140(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1556 Bytes - 18:49:28, 08 November 2024
Infineon.com/IRF4104PBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"120(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"40(V)","Packaging":"Rail/Tube","Power Dissipation":"140(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1542 Bytes - 18:49:28, 08 November 2024
Infineon.com/IRF4104SPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"120(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"40(V)","Packaging":"Rail/Tube","Power Dissipation":"140(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1524 Bytes - 18:49:28, 08 November 2024
Irf.com/AUIRF4104
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"100nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"5.5 mOhm @ 75A, 10V","Datasheets":"A...
1785 Bytes - 18:49:28, 08 November 2024
Irf.com/AUIRF4104S
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"100nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"5.5 ...
1834 Bytes - 18:49:28, 08 November 2024
Irf.com/AUIRF4104STRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"100nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"5.5 ...
1871 Bytes - 18:49:28, 08 November 2024
Irf.com/AUIRF4104STRR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"220 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0055 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"470 A","Channel Type":"N-CHANNE...
1570 Bytes - 18:49:28, 08 November 2024
Irf.com/IRF4104
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"100nC @ 10V","Product Photos":"TO-220AB PKG","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"5.5 mOhm @ 75A, 10V","Datasheets":"IRF4104(S,L)","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"50","Drain to Source Voltage (Vdss)":"40V"...
1689 Bytes - 18:49:28, 08 November 2024
Irf.com/IRF4104GPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"100nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"5.5 mOhm @ 75A, 10V","Datasheets":"IRF4104...
1800 Bytes - 18:49:28, 08 November 2024
Irf.com/IRF4104L
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"3000pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-262","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRF4104(S,L)","Rds On (Max) @ Id, Vgs":"5.5 mOhm @ 75A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max...
1606 Bytes - 18:49:28, 08 November 2024
Irf.com/IRF4104LPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"3000pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-262","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRF4104(S,L)PbF","Rds On (Max) @ Id, Vgs":"5.5 mOhm @ 75A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - ...
1634 Bytes - 18:49:28, 08 November 2024
