PD - 94639A IRF4104 IRF4104S IRF4104L AUTOMOTIVE MOSFET Features HEXFET(R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS(on) = 5.5m G Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings ID = 75A S D2Pak IRF4104S TO-220AB IRF4104 Parameter TO-262 IRF4104L Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C Continuous Drain Current, VGS @ 10V 120 ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current IDM 75 470 PD @TC = 25C Power Dissipation 140 W Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value EAS (Tested ) 0.95 20 W/C V 120 mJ 84 c d c IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range -55 to + 175 C Mounting Torque, 6-32 or M3 screw i Parameter RJC Junction-to-Case RCS Case-to-Sink, Flat Greased Surface RJA Junction-to-Ambient www.irf.com Junction-to-Ambient (PCB Mount) A mJ Thermal Resistance i 220 See Fig.12a, 12b, 15, 16 g Soldering Temperature, for 10 seconds RJA h A j i 300 (1.6mm from case ) y y 10 lbf in (1.1N m) Typ. Max. Units --- 1.05 C/W 0.50 --- --- 62 --- 40 1 8/29/03 IRF4104S/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ RDS(on) Min. Typ. Max. Units 40 --- --- Breakdown Voltage Temp. Coefficient --- 0.032 --- Static Drain-to-Source On-Resistance --- 4.3 5.5 VGS(th) Gate Threshold Voltage 2.0 --- 4.0 gfs IDSS Forward Transconductance IGSS V V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A e V VDS = VGS, ID = 250A VDS = 10V, ID = 75A 63 --- --- V --- --- 20 A --- --- 250 Gate-to-Source Forward Leakage --- --- 200 Drain-to-Source Leakage Current Conditions VGS = 0V, ID = 250A VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V Gate-to-Source Reverse Leakage --- --- -200 Qg Total Gate Charge --- 68 100 Qgs Gate-to-Source Charge --- 21 --- Qgd Gate-to-Drain ("Miller") Charge --- 27 --- VGS = 10V td(on) Turn-On Delay Time --- 16 --- VDD = 20V tr Rise Time --- 130 --- td(off) Turn-Off Delay Time --- 38 --- tf Fall Time --- 77 --- LD Internal Drain Inductance --- 4.5 --- ID = 75A nC VDS = 32V e ID = 75A ns RG = 6.8 VGS = 10V e Between lead, nH LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Input Capacitance --- 3000 --- and center of die contact VGS = 0V Coss Output Capacitance --- 660 --- Crss Reverse Transfer Capacitance --- 380 --- Coss Output Capacitance --- 2160 --- VGS = 0V, VDS = 1.0V, = 1.0MHz Coss Output Capacitance --- 560 --- VGS = 0V, VDS = 32V, = 1.0MHz Coss eff. Effective Output Capacitance --- 850 --- VGS = 0V, VDS = 0V to 32V VDS = 25V pF = 1.0MHz f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 75 ISM (Body Diode) Pulsed Source Current --- --- 470 VSD (Body Diode) Diode Forward Voltage --- --- 1.3 trr Reverse Recovery Time --- 23 35 ns Qrr Reverse Recovery Charge --- 6.8 10 nC ton Forward Turn-On Time 2 c Conditions MOSFET symbol A V showing the integral reverse p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V e TJ = 25C, IF = 75A, VDD = 20V di/dt = 100A/s e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF4104S/L 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 4.5V 1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 20s PULSE WIDTH Tj = 25C 4.5V 0.1 10 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 120 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current ( A) 20s PULSE WIDTH Tj = 175C T J = 25C T J = 175C 100 10 VDS = 15V 20s PULSE WIDTH 1 T J = 25C 100 80 60 TJ = 175C 40 20 VDS = 10V 380s PULSE WIDTH 0 4 6 8 10 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 12 0 20 40 60 80 100 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current 3 IRF4104S/L 5000 VGS, Gate-to-Source Voltage (V) 4000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Ciss 3000 2000 Coss 1000 ID= 75A VDS= 32V VDS= 20V 16 12 8 4 Crss 0 0 1 10 0 100 20 40 60 80 100 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.0 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100.0 T J = 175C 10.0 T J = 25C 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1000 100 100sec 10 1 1.8 1msec Tc = 25C Tj = 175C Single Pulse 0 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF4104S/L 120 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 LIMITED BY PACKAGE ID , Drain Current (A) 100 80 60 40 20 0 25 50 75 100 125 150 ID = 75A VGS = 10V 1.5 1.0 0.5 175 -60 -40 -20 T C , Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 2 1 2 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) R3 R3 3 C 3 Ri (C/W) i (sec) 0.371 0.000272 0.337 0.001375 0.337 0.018713 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF4104S/L DRIVER L VDS D.U.T RG + V - DD IAS 20V VGS A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 500 15V TOP BOTTOM 400 ID 11A 16A 75A 300 200 100 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGD 4.0 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) QGS ID = 250A 3.0 2.0 1.0 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 T J , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage Vs. Temperature www.irf.com IRF4104S/L Avalanche Current (A) 1000 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 100 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 140 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A EAR , Avalanche Energy (mJ) 120 100 80 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRF4104S/L D.U.T Driver Gate Drive + + * * * * D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - Period P.W. VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS VGS RG RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF4104S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS S EMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C For GB Production EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE AS S E MBLY LINE "C" INTERNATIONAL RECTIFIER LOGO LOT CODE www.irf.com PART NUMBER DATE CODE 9 IRF4104S/L D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER F 530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L ASS EMBLY LOT CODE For GB Production T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO LOT CODE 10 PART NUMBER F 530S DAT E CODE www.irf.com IRF4104S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE www.irf.com PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C 11 IRF4104S/L D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Notes: Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. Limited by TJmax, starting TJ = 25C, L = 0.04mH This value determined from sample failure population. 100% R G = 25, IAS = 75A, VGS =10V. Part not tested to this value in production. recommended for use above this value. This is only applied to TO-220AB pakcage. Pulse width 1.0ms; duty cycle 2%. This is applied to D2Pak, when mounted on 1" square PCB (FR Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering same charging time as Coss while VDS is rising techniques refer to application note #AN-994. from 0 to 80% VDSS . Repetitive rating; pulse width limited by TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101]market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/03 12 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/