3/29/10
www.irf.com 1
HEXFET® Power MOSFET
Features
OLow On-Resistance
ODynamic dV/dT Rating
O175°C Operating Temperature
OFast Switching
OFully Avalanche Rated
ORepetitive Avalanche Allowed up to Tjmax
OLead-Free, RoHS Compliant
OAutomotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest process-
ing techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D2Pak
AUIRF4104S
TO-220AB
AUIRF4104
AUIRF4104
AUIRF4104S
PD - 97471A
AUTOMOTIVE GRADE
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
V
(BR)DSS
40V
R
DS(on)
typ. 4.3mΩ
max. 5.5mΩ
I
D (Silicon Limited)
120A
k
I
D (Package Limited)
75A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
IDM Pulsed Drain Current
c
PD @TC = 25°C Power Dissipation W
Linear Derating Factor W/°C
VGS Gate-to-Source Voltage V
EAS Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested ) Single Pulse Avalanche Energy Tested Value
g
IAR Avalanche Current
c
A
EAR Repetitive Avalanche Energy
g
mJ
TJ Operating Junction and
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
j
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case
i
––– 1.05 °C/W
RθCS Case-to-Sink, Flat Greased Surface 0.50 –––
RθJA Junction-to-Ambient (PCB Mount) ––– 40
-55 to + 175
300 (1.6mm from case )
10 lbf
y
in (1.1N
y
m)
140
0.95
± 20
Max.
120
k
84
k
470
75
220
120
See Fig.12a, 12b, 15, 16
Note to are on page 3
AUIRF4104/S
2www.irf.com
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 4.3 5.5 mΩ
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 63 ––– ––– V
IDSS Drain-to-Source Leakage Current ––– ––– 20 μA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
QgTotal Gate Charge ––– 68 100
Qgs Gate-to-Source Charge ––– 21 ––– nC
Qgd Gate-to-Drain ("Miller") Charge ––– 27 –––
td(on) Turn-On Delay Time ––– 16 –––
trRise Time ––– 130 –––
td(off) Turn-Off Delay Time ––– 38 ––– ns
tfFall Time –––77–––
LDInternal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
LSInternal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 3000 –––
Coss Output Capacitance ––– 660 –––
Crss Reverse Transfer Capacitance ––– 380 ––– pF
Coss Output Capacitance ––– 2160 –––
Coss Output Capacitance ––– 560 –––
Coss eff. Effective Output Capacitance ––– 850 –––
Di
o
d
e
Ch
aracter
i
st
i
cs
Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– 75
(Body Diode) A
ISM Pulsed Source Current ––– ––– 470
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 23 35 ns
Qrr Reverse Recovery Charge ––– 6.8 10 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 10V, ID = 75A
ID = 75A
VDS = 32V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 75A, VGS = 0V
e
TJ = 25°C, IF = 75A, VDD = 20V
di/dt = 100A/μs
e
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A
e
VDS = VGS, ID = 250μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
f
VGS = 10V
e
VDD = 20V
ID = 75A
RG = 6.8 Ω
AUIRF4104/S
www.irf.com 3
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.04mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
Notes:
This value determined from sample failure population,
starting TJ = 25°C, L = 0.04mH, RG = 25Ω, IAS = 75A, VGS =10V
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
This is only applied to TO-220AB pakcage.
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 75A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.(Refer to AN-1140
http://www.irf.com/technical-info/appnotes/an-1140.pdf)
Qualification Information
†
TO-220AB N/A
D
2
PAK MSL1
RoHS Compliant Yes
ESD
Machine Model Class M4
AEC-Q101-002
Human Body Model Class H1C
AEC-Q101-001
Charged Device
Model
Class C3
AEC-Q101-005
Moisture Sensitivity Level
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
AUIRF4104/S
4www.irf.com
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
Vs. Drain Current
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
20μs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
4.5V 20μs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4 6 8 10 12
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (
A)
TJ = 25°C
TJ = 175°C
VDS = 15V
20μs PULSE WIDTH
0 20406080100
ID, Drain-to-Source Current (A)
0
20
40
60
80
100
120
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 10V
380μs PULSE WIDTH
AUIRF4104/S
www.irf.com 5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0 20406080100
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 32V
VDS= 20V
ID= 75A
0.2 0.6 1.0 1.4 1.8
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
0 1 10 100 1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
ance
AUIRF4104/S
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 75A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.371 0.000272
0.337 0.001375
0.337 0.018713
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
ID , Drain Current (A)
LIMITED BY PACKAGE
AUIRF4104/S
www.irf.com 7
QG
QGS QGD
VG
Charge
D.U.T. VDS
ID
IG
3mA
VGS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage Vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
VGS(th) Gate threshold Voltage (V)
ID = 250μA
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
100
200
300
400
500
EAS, Single Pulse Avalanche Energy (mJ)
ID
TOP 11A
16A
BOTTOM 75A
AUIRF4104/S
8www.irf.com
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ΔTj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
140
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
AUIRF4104/S
www.irf.com 9
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
AUIRF4104/S
10 www.irf.com
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRF4104
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Leadfree
Part Number
IR Logo
Lot Code
AUIRF4104/S
www.irf.com 11
D2Pak Part Marking Information
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUF4104S
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Leadfree
Part Number
IR Logo
Lot Code
AUIRF4104/S
12 www.irf.com
TO-220AB package is not recommended for Surface Mount Application.
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D2Pak Tape & Reel Infomation
AUIRF4104/S
www.irf.com 13
Ordering Information
Base
p
art number Packa
g
e T
yp
e Standard Pac
k
Com
p
lete Part Number
Form Quantit
y
AUIRF4104 TO-220 Tube 50 AUIRF4104
AUIRF4104S D2Pak Tube 50 AUIRF4104S
AUIRF4104S Tape and Reel Left 800 AUIRF4104STRL
AUIRF4104S Tape and Reel Right 800 AUIRF4104STRR
AUIRF4104/S
14 www.irf.com
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to
its products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR
deems necessary to support this warranty. Except where mandated by government requirements, testing of all
parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for
their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction
of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable
for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is
an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application in which
the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer
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claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any
claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
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IR products are neither designed nor intended for use in military/aerospace applications or environments unless
the IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products
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IR products are neither designed nor intended for use in automotive applications or environments unless the
specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number
including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products
in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
AUIRF4104/S
www.irf.com 15
Revision History
Date Comments
2/5/2010 Revised with new AU tem
p
late:
1)Add sentence below Absolute Max Ratin
g
2)Update ESD by using ESD data and table from Anika
3)Update Part Marking drawing
4) Add Order Info table
5) Add Revision History
