Product Datasheet Search Results:

FDS9933A.pdf5 Pages, 62 KB, Original
FDS9933A
Fairchild
MOSFET P-CH DUAL 20V 3.8A 8SOIC - FDS9933A
FDS9933AD84Z.pdf5 Pages, 61 KB, Original
FDS9933AD84Z
Fairchild Semiconductor Corporation
3.8 A, 20 V, 0.075 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
FDS9933AL86Z.pdf5 Pages, 61 KB, Original
FDS9933AL86Z
Fairchild Semiconductor Corporation
3.8 A, 20 V, 0.075 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
FDS9933AL99Z.pdf5 Pages, 61 KB, Original
FDS9933AL99Z
Fairchild Semiconductor Corporation
3.8 A, 20 V, 0.075 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
FDS9933A_NL.pdf5 Pages, 61 KB, Original
FDS9933A_NL
Fairchild Semiconductor
Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDS9933AS62Z.pdf5 Pages, 61 KB, Original
FDS9933AS62Z
Fairchild Semiconductor Corporation
3.8 A, 20 V, 0.075 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
FDS9933A.pdf7 Pages, 177 KB, Original
FDS9933A
On Semiconductor
Trans MOSFET P-CH 20V 3.8A 8-Pin SOIC T/R
FDS9933A.pdf67 Pages, 163 KB, Original
FDS9933A
Toshiba
Power MOSFETs Cross Reference Guide

Product Details Search Results:

Fairchildsemi.com/FDS9933A
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1.5V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"3.8A","Gate Charge (Qg) @ Vgs":"10nC @ 4.5V","Product Photos":"8-SOIC","PCN Design/Specification":"Mold Compound 12/Dec/2007","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"75 mOhm @ 3.8A, 4.5V","Datasheets":"FDS9933A","FET Type":"2 P-Channel (...
1844 Bytes - 19:15:24, 22 November 2024
Fairchildsemi.com/FDS9933AD84Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.8 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1520 Bytes - 19:15:24, 22 November 2024
Fairchildsemi.com/FDS9933AL86Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.8 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown...
1532 Bytes - 19:15:24, 22 November 2024
Fairchildsemi.com/FDS9933AL99Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.8 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1518 Bytes - 19:15:24, 22 November 2024
Fairchildsemi.com/FDS9933AS62Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.8 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown...
1532 Bytes - 19:15:24, 22 November 2024
Null/FDS9933A
1009 Bytes - 19:15:24, 22 November 2024
Onsemi.com/FDS9933A
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b18(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3.8(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"20(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1479 Bytes - 19:15:24, 22 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
7BHA9933A01.pdf0.061Request