FDS9933A - ON SEMICONDUCTOR

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FDS9933A

FDS9933A Rev . C

FDS9933A

Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description

These P-Channel 2.5V specified MOSFETs are produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize the

on-state resistance and yet maintain low gate charge for

superior switching performance.

November 1998

Features

• -3.8 A, -20 V. RDS(on) = 0.075 Ω @ VGS = -4.5 V

RDS(on) = 0.105 Ω @ V GS = -2.5 V.

•Low gate charge ( 7nC typical ).

•Fast switching speed.

•High performance trench technology for extremely

low RDS(on).

•High power and current handling capability .

1998 Fairchild Semiconductor Corporation

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter FDS9933A Units

VDSS Drain-Source Voltage -20 V

VGSS Gate-Source Voltage ± 8V

IDDrain Cu rrent - Continuous

(

Note 1a

)

-3.8 A

- Pulsed -20

Power Dissipation for Dual Operation 2.0

Power Dissipation for Sin

le Operation

(

Note 1a

)

1.6

(

Note 1b

)

1.0

(

Note 1c

)

0.9

TJ, Tstg O perating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

RθJA Ther ma l Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS9933A FDS9933A 13’’ 12mm 2500 units

Applications

• Load switch

• DC/DC converter

• Motor drives

SO-8

pin 1

FDS9933A

FDS9933A Rev . C

DMOS Electrical Characteristics TA = 25°C unless otherwise noted

BVDSS Drain-Source Break down Voltage VGS = 0 V, ID = -250 µA-20 V

∆ΒVDSS

∆TJ

Breakdown Voltage Tem perature

Coefficient ID = -250 µA, Referenced to 25°C-16mV/

°C

IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA

IGSSF Gate-Body Leakage, Forward VGS = 8 V, V DS = 0 V 100 nA

IGSSR Gate-Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA

VGS(th) Gate Threshold V ol t age VDS = VGS, ID = -250 µA -0.4 -0.8 -1.5 V

∆VGS(th)

∆TJ

Gate Threshold Vol tage

Temperature Coeff i ci ent ID = -250 µA, Referenc ed to 25°C2.5mV/

°C

RDS(on) Stat i c Drain-Source

On-Resistance VGS = -4.5 V, ID = -3.8 A

VGS = -4.5 V, ID = -3.8 A, TJ = 125°C

VGS = -2.5 V, ID = -3.3 A

0.058

0.086

0.084

0.075

0.12

0.105

Ω

ID(on) On-Stat e Drai n Current VGS = -4.5 V, VDS = -5.0 V -10 A

gFS Forward Transconductance VDS = -4.5 V, ID = -3.8 A 10 S

Ciss Input Capacit anc e VDS = -10 V, VGS = 0 V, f = 1.0 M Hz 600 pF

Coss Output Capacitance 175 pF

Crss Reverse Transfer Capacitance 80 pF

td(on) Turn-On Delay Time VDD = -5 V, ID = -0.5 A, 6 12 ns

trTurn-On Rise Time VGS = -4.5 V, RGEN = 6.0 Ω918ns

td(off) Turn-Off Delay Time 31 50 ns

tfTurn-Off Fall Time 28 42 ns

QgTotal Gate Charge VDS = -10 V, ID = -3.8 A, 7 10 nC

Qgs Gate-Source Charge VGS = -4.5 V 1.3 nC

Qgd Gate-Drain Charge 2 nC

ISMaximum Continuous Drain-S ource Diode Forward Current -1.3 A

VSD Drain-Source Di ode Forward

Voltage VGS = 0 V, I S = -1.3 A (Note 2) -0.75 -1.2 V

Dynamic Characteristics

Switching Characteristics (Note 2)

Off Characteristics

On Characteristics (Note 2)

Drain-Source Diode Characteristics and Maximum Ratings

Symbol Parameter Test Conditions Min Typ Max Units

Notes:

1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.

Scale 1 : 1 on letter size paper

2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

a) 78° C/W when

mounted on a 0.5 in2

pad of 2 oz. copper.

b) 125° C/W when

mounted on a 0.02 in2

pad of 2 oz. copper.

c) 135° C/W when

mounted on a 0.003 in2

pad of 2 oz. copper.

FDS9933A

FDS9933A Rev . C

Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation with

Drain Current and Gate Voltage.

Figure 3. On-Resistance V ariation

withTemperature. Figure 4. On-Resistance V ariation with

Gate-to-Source Voltage.

Figure 5. T ransfer Characteristics. Figure 6. Body Diode Forward V oltage

V ariation with Source Current

and Temperature.

T ypical Characteristics (continued)

012345

- V , DRAIN-SOURCE VOLTAGE (V)

- I , DRAIN-SOURCE CURRENT (A)

-2.0V

-2.5V

-3.0V

V = -4.5V

-3.5V

-1.5V

0 4 8 121620

0.04

0.06

0.08

0.1

0.12

- I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESIST A NCE

V = -2 .0 V

R , NORMALIZED

DS(ON )

-4 .5 V

-2 .5 V

-3 .5 V

-3 .0 V

11.522.53

- V , GATE T O SOURCE V OLTAGE (V)

- I , DRAI N CURRE NT (A )

V = -5V

T = -55°C

J125°C

25°C

0 0.2 0.4 0.6 0.8 1 1.2

0.0001

0.001

0.01

0.1

- V , BODY DIODE FO RWARD VOL TAGE (V)

-I , REVERSE DRAIN CURRENT (A)

25 °C

-55 °C

V = 0V

T = 125°C

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1.2

1.4

1.6

T , JU N CTION TEMPER ATURE ( ° C)

DRA I N-S OURCE ON- RESI STAN CE

R , NORMALIZED

DS(ON)

V = -4 .5V

I = -3.8A

12345

0.05

0.1

0.15

0.2

0.25

- V , GATE TO SOURCE VOLTAGE (V)

R , ON-RESISTA NCE (OHM )

DS(ON)

25°C

I = -2.0A

T = 125°C

FDS9933A

FDS9933A Rev . C

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

Typical Characteristics (continued)

0.1 0.2 0.5 1 2 5 10 20

100

200

500

1000

2000

-V , D RAIN TO SOU R CE VOL TA G E (V)

CAPACIT ANCE ( p F )

iss

f = 1 M Hz

V = 0 V

G S

oss

rss

0246810

Q , GATE CHARGE (nC)

-V , GATE -SOU RC E V O LTAG E (V )

V = -5 V

-15V

I = -3 .8 A

-10V

0.1 0.3 1 2 5 10 30

0.01

0.05

0.5

- V , DRAIN-SOURCE VOL TAGE ( V)

- I , DRAIN CURRENT (A)

RD S(ON ) LIMIT

100ms

10ms

1ms

10s

V = -4. 5V

SINGLE PULSE

R = 135°C/ W

T = 2 5°C

100us

0.01 0.1 0.5 10 50 100 300

SIN GL E PULSE TI ME (SEC )

POWE R (W )

SING LE PUL SE

R =13 5°C/W

T = 25 °C

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient themal response will change depending on the circuit board design.

0.0001 0.001 0.01 0.1 1 10 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

t , TIME (sec)

T RANSIENT THERMAL RE SIS TANCE

r (t), NO RMAL IZED EFFEC TIVE

S i n g l e P u l s e

D = 0.5

0.1

0. 0 5

0. 0 2

0. 0 1

0.2

D u t y C y c l e, D = t /t

T - T = P * R (t)

θJA

P(pk)

1 t

R (t ) = r( t) * R

R =135°C/W

θJA

θJAθJA

TRADEMARKS

ACEx™

CoolFET™

CROSSVOLT™

E2CMOSTM

FACT™

FACT Quiet Series™

FAST®

FASTr™

GTO™

HiSeC™

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

SyncFET™

TinyLogic™

UHC™

VCX™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench

QFET™

QS™

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8



Rev. D

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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