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FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. * -3.8 A, -20 V. RDS(on) = 0.075 RDS(on) = 0.105 @ VGS = -2.5 V. Applications * Load switch * DC/DC converter * Motor drives * Low gate charge ( 7nC typical ). * Fast switching speed. * High performance trench technology for extremely low RDS(on). * High power and current handling capability. D2 D1 D2 D1 SO-8 pin 1 S1 G1 S2 Absolute Maximum Ratings Symbol @ VGS = -4.5 V G2 5 4 6 3 7 2 8 1 o TA=25 C unless otherwise noted Parameter FDS9933A Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage V ID Drain Current 8 -3.8 - Continuous (Note 1a) - Pulsed PD Power Dissipation for Dual Operation 2.0 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) TJ, Tstg A -20 Operating and Storage Junction Temperature Range W 0.9 -55 to +150 C C/W C/W Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient (Note 1a) 78 Thermal Resistance, Junction-to-Case (Note 1) 40 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9933A FDS9933A 13'' 12mm 2500 units 1998 Fairchild Semiconductor Corporation FDS9933A Rev. C FDS9933A November 1998 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units -16 mV/C Off Characteristics VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C BVDSS Drain-Source Breakdown Voltage VDSS TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSSF Gate-Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 A nA IGSSR Gate-Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA On Characteristics -20 V -1 (Note 2) VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS(th) Gate Threshold Voltage VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current VGS = -4.5 V, ID = -3.8 A VGS = -4.5 V, ID = -3.8 A, TJ = 125C VGS = -2.5 V, ID = -3.3 A VGS = -4.5 V, VDS = -5.0 V gFS Forward Transconductance VDS = -4.5 V, ID = -3.8 A -0.4 -0.8 -1.5 0.058 0.086 0.084 V mV/C 2.5 0.075 0.12 0.105 -10 10 A S Dynamic Characteristics Ciss Input Capacitance 600 pF Coss Output Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz 175 pF Crss Reverse Transfer Capacitance 80 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time VDD = -5 V, ID = -0.5 A, 6 12 ns tr Turn-On Rise Time VGS = -4.5 V, RGEN = 6.0 9 18 ns td(off) Turn-Off Delay Time 31 50 ns tf Turn-Off Fall Time 28 42 ns Qg Total Gate Charge VDS = -10 V, ID = -3.8 A, 7 10 Qgs Gate-Source Charge VGS = -4.5 V Qgd Gate-Drain Charge nC 1.3 nC 2 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -0.75 -1.3 A -1.2 V Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 78 C/W when mounted on a 0.5 in2 pad of 2 oz. copper. b) 125 C/W when mounted on a 0.02 in2 pad of 2 oz. copper. c) 135 C/W when mounted on a 0.003 in2 pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDS9933A Rev. C FDS9933A DMOS Electrical Characteristics (continued) 0 . 12 20 V G S= -4.5V -3. 5V V GS = -2 . 0 V -3.0V 15 R DS( ON ) , NORM A LIZED D R AI N -SOU RC E ON -R ESI ST A NC E - I D , D R AI N -S OU R C E CU R R E NT (A) FDS9933A Typical Characteristics -2.5V 10 -2.0V 5 -1.5V 0 0 1 2 3 4 0. 1 -2 . 5 V -3 . 0 V 0 . 08 -3 . 5 V -4 . 5 V 0 . 06 0 . 04 5 0 4 8 16 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1 .6 0.25 1 .4 ID = -3. 8A V GS = -4 .5V 1 .2 1 0 .8 0 .6 -50 I D = -2.0 A 0.2 0.15 0.1 T J= 1 2 5 C 0.05 25C 0 -25 0 25 50 75 100 125 1 150 2 3 4 5 - VGS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCT ION TEMPERATURE ( C) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. Figure 3. On-Resistance Variation withTemperature. 10 10 TJ = -55C V GS = 0V 125 C -I S , R EV ER S E D RA IN C UR R E N T (A ) VDS = -5V - ID, DRAIN CURRENT (A) 12 - I D , D RA I N C U RR EN T (A) R D S(ON) , ON-RESISTA NCE (OHM ) R D S(ON) , NORM ALI ZED DRAIN-SOURCE ON-RESISTANCE - VDS , D R AI N-S OU R CE VOLTA GE (V) 8 25C 6 4 2 0 1 1.5 2 2.5 -VGS , GATE T O SOURCE VOLTAGE (V) 3 1 T J = 125 C 0.1 25 C -55 C 0.01 0.001 0.0001 0 0.2 -V SD Figure 5. Transfer Characteristics. 0.4 0.6 0.8 1 1.2 , BOD Y D I OD E FOR W AR D VOLT AGE (V ) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS9933A Rev. C (continued) 5 2000 I D = -3 .8 A V D S = -5 V 4 1000 -10 V -15 V C AP AC I TA NC E (pF) -V G S , GATE -SOU R C E V OLTAG E (V ) FDS9933A Typical Characteristics 3 2 1 Ciss 500 200 Coss f = 1 M Hz VG S = 0 V 100 0 0 2 4 6 8 50 0.1 10 0.2 Q g , GA TE C H AR GE (nC ) 50 100 ( ON ) LI 1m M IT 10 m 3 100 V G S = -4.5V SING L E PUL S E R J A = 135 C/ W A TA = 2 5C 0. 05 0. 01 0 .1 2 5 10 20 30 us SING LE PUL SE RJ A =13 5 C/W T A = 2 5C 25 s s 20 ms 1s 10 s DC 0 .5 1 Figure 8. Capacitance Characteristics. PO W E R (W ) - I D , D R AI N C U R R EN T (A) S RD 0.5 -V DS , D R A IN T O S OU R CE V OLTA GE (V) Figure 7. Gate Charge Characteristics. 10 Crss 15 10 5 0 .3 1 2 5 10 0 0. 01 30 0. 1 0. 5 10 50 1 00 3 00 S IN GL E P UL S E TI ME (S EC ) - VD S , DR A IN -SO UR C E V OLTA GE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r (t), NO RMAL IZED EFFEC TIVE T RANSIENT THERMAL RESISTANCE 1 0.5 0.2 0.1 0.05 0.02 0.01 D = 0 .5 0 .2 R JA ( t) = r( )t * RJA R JA = 135C/W 0 .1 0.0 5 P(p k) 0.0 2 0.0 1 t1 S in g le P ul s e t2 0.005 TJ - TA = P * RJA (t) 0.002 D u t y C y c l e, D = t1 /t 0.001 0.0 001 0.001 0.01 0.1 1 10 100 2 300 t1, TIME (s ec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDS9933A Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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