Product Datasheet Search Results:

FB20R06W1E3.pdf10 Pages, 550 KB, Original
FB20R06W1E3_B1.pdf12 Pages, 648 KB, Original
FB20R06W1E3_B11.pdf13 Pages, 1179 KB, Original
FB20R06W1E3BOMA1.pdf5 Pages, 1023 KB, Original

Product Details Search Results:

Infineon.com/FB20R06W1E3
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"250 ns","Collector Current-Max (IC)":"29 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"37 ns","EU RoHS Compliant":"Yes","Configuration":"COMPLEX","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","Case C...
1377 Bytes - 04:06:11, 31 January 2025
Infineon.com/FB20R06W1E3_B11
{"Factory Pack Quantity":"24","Brand":"Infineon Technologies","Product Category":"IGBT Modules","Part # Aliases":"SP001000984","Manufacturer":"Infineon"}...
1122 Bytes - 04:06:11, 31 January 2025
Infineon.com/FB20R06W1E3BOMA1
752 Bytes - 04:06:11, 31 January 2025

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
FB20R06W1E3_B1.pdf0.631Request
FB20R06W1E3.pdf0.531Request
FB20R06W1E3_B11.pdf0.911Request
FB20R06W1E3.pdf0.841Request