No. A2280-1/5
http://onsemi.com
Semiconductor Components Industries, LLC, 2014
January, 2014
MCH6661
N-Channel Power MOSFET
30V, 1.8A, 188m, Dual MCPH6
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
12114HK TC-00003088/11014HK PE
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Features
ON-resistance Nch : RDS(on)1=145m(typ.)
•
4V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Value Unit
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID1.8 A
Drain Current (Pulse) IDP PW10μs, duty cycle1% 7.2 A
Power Dissipation PD
When mounted on ceramic substrate (900mm
2
×0.8mm) 1unit
0.8 W
Junction Temperature Tj 150 °C
Storage Temperature Purposes, Tstg --55 to +150 °C
Lead Temperature for Soldering Purposes,
3mm from Case for 10 Seconds TL260 °C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parameter Symbol Value Unit
Junction to Ambient RθJA 156.3 °C/W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Value Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 μA
Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA
Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transconductance gFS VDS=10V, ID=0.9A 1.1 S
Static Drain to Source On-State Resistance
RDS(on)1 ID=0.9A, VGS=10V 145 188 m
RDS(on)2 ID=0.5A, VGS=4.5V 245 343 m
RDS(on)3 ID=0.5A, VGS=4V 270 378 m
Input Capacitance Ciss
VDS=10V, f=1MHz
88 pF
Output Capacitance Coss 19 pF
Reverse Transfer Capacitance Crss 11 pF
Turn-ON Delay Time td(on)
See specied Test Circuit.
3.4 ns
Rise Time tr 3.6 ns
Turn-OFF Delay Time td(off) 10.5 ns
Fall Time tf4.0 ns
Total Gate Charge Qg
VDS=15V, VGS=10V, ID=1.8A
2.0 nC
Gate to Source Charge Qgs 0.33 nC
Gate to Drain “Miller” Charge Qgd 0.29 nC
Forward Diode Voltage VSD IS=1.8A, VGS=0V 0.86 1.2 V
Ordering number : ENA2280A
MCH6661
No. A2280-2/5
ID -- VGS(th)
Drain Current, ID -- A
Gate to Source Vo ltage, VGS -- VDrain to Source Vo ltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
Gate to Source Vo ltage, VGS -- V
Static Drain to Source
On-State Resistance, RDS(on) -- m
Ambient Temperature, Ta -- °C
RDS(on) -- TaRDS(on) -- VGS
Static Drain to Source
On-State Resistance, RDS(on) -- m
0
0.2
1.2
0.8
1.6
0.6
0.4
1.4
1.0
2.0
1.8
0 1.00.5 3.02.0 3.52.51.5 4.0
IT13108
Ta=75°C
--25°C
VDS=10V
25°C
0
0
0.2
1.2
0.8
1.6
0.6
0.4
1.4
1.0
1.8
1.00.80.60.1 0.2 0.4 0.90.70.3 0.5
IT16666
IT16668
024681610 12 14
IT16667
600
0
150
50
100
200
300
400
250
350
450
550
500
600
0
50
150
100
200
300
400
250
350
450
550
500
Ta=25°C
15.0V
4.5V
--60 --40 --20 020406080 100 120 140 160
VGS=10.0V, ID=0.9A
VGS=4.0V, ID=0.5A
8.0V 6.0V
ID=0.5A
10.0V
0.9A
VGS=2.5V
3.0V
3.5V
4.0V
VGS=4.5V, ID=0.5A
Ta=25°C
IS -- VSD
Forward Diode Current, IS -- A
Forward Diode to Source Vo ltage
, VSD -- V
Drain Current, ID -- A
gFS -- ID
Forward Transfer Admittance, | yfs | -- S
SW Time -- ID
Switching Time, SW Time -- ns
Drain Current, ID -- A
Ciss, Coss, Crss -- VDS
Drain to Source Vo ltage, VDS -- V
Ciss, Coss, Crss -- pF
IT13111
7
1.0
10
5
3
2
2
5
3
IT13113
235
0.1 1.0
35 27
td(on)
td(off)
tf
tr
VDD=15V
VGS=10V
0.001
1.0
0.01
23 57 20.1
3572 1.0
357
2
7
5
3
2
3
0.1
0.01
2
7
7
5
3
VDS=10V
25
°
C
Ta= --25°C
75
°
C
0103015 20525
100
10
5
3
7
5
7
2
3
2
IT13114
Ciss
Coss
Crss
f=1MHz
IT13112
0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1.0
7
5
3
2
7
5
3
2
7
5
3
2
3
2VGS=0V
75
°
C
25°C
Ta= --25
°
C
MCH6661
No. A2280-3/5
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate to Source Voltage, VGS -- V
S O A
Drain to Source Vo ltage, VDS -- V
Drain Current, ID -- A
0 0.2 0.6 1.00.4 0.8 2.01.41.2 1.6 1.8
0
1
2
7
5
4
3
9
8
6
10
IT16669
VDS=15V
ID=1.8A
IT16670
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
10
0.01
223 5723 57 1.0 235 7
10 1000.01 0.1
Operation in this
area is limited by RDS(on).
100ms
100μs
10ms
DC operation
1ms
35
IDP=7.2A (PW10μs)
ID=1.8A
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IT16613
0
0
20 40 60 80 100 140120
1.0
0.8
0.6
0.2
0.4
160
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
HD140108
0,11.0 10
1
10
0.1
0.000001 0.00010.001
100
0.01
2573
1000
0.00001
RθJA -- Pulse Time
Thermal Resistance, RθJA -- ºC/W
Pulse Time, PT -- s
Single Pulse
Duty Cycle=0.5
0.2
0.1
0.05
0.02
0.01
When mounted on ceramic substrate
(900mm2×0.8mm)
1unit
25732573257325732573
2573
MCH6661
No. A2280-4/5
Package Dimensions
MCH6661-TL-W
SC-88FL / MCPH6
CASE 419AS
ISSUE O
unit : mm
1:Source1
2:Gate1
3:Drain2
4:Source2
5:Gate2
6:Drain1
Ordering & Package Information Packing Type:TL Marking
Device Package Shipping note
MCH6661-TL-W MCPH6,
SC-88,SOT-363
3,000
pcs. / reel
Pb-Free
and
Halogen Free
Electrical Connection Switching Time Test Circuit
TL
XN
LOT No.
LOT No.
65 4
132Top view
PW=10μs
D.C.1%
P. G50
G
S
D
ID=0.8A
RL=18.6
VDD=15V
VOUT
VIN
10V
0V
VIN
MCH6661
Recommended
Soldering Footprint
MCH6661
No. A2280-5/5PS
Note on usage : Since the MCH6661 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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