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No. A2280-1/5
http://onsemi.com
Semiconductor Components Industries, LLC, 2014
January, 2014
MCH6661
N-Channel Power MOSFET
30V, 1.8A, 188mΩ, Dual MCPH6
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
12114HK TC-00003088/11014HK PE
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Features
• ON-resistance Nch : RDS(on)1=145mΩ (typ.)
•
4V drive
• Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Value Unit
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID1.8 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 7.2 A
Power Dissipation PD
When mounted on ceramic substrate (900mm
2
×0.8mm) 1unit
0.8 W
Junction Temperature Tj 150 °C
Storage Temperature Purposes, Tstg --55 to +150 °C
Lead Temperature for Soldering Purposes,
3mm from Case for 10 Seconds TL260 °C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parameter Symbol Value Unit
Junction to Ambient RθJA 156.3 °C/W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Value Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 μA
Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA
Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transconductance gFS VDS=10V, ID=0.9A 1.1 S
Static Drain to Source On-State Resistance
RDS(on)1 ID=0.9A, VGS=10V 145 188 mΩ
RDS(on)2 ID=0.5A, VGS=4.5V 245 343 mΩ
RDS(on)3 ID=0.5A, VGS=4V 270 378 mΩ
Input Capacitance Ciss
VDS=10V, f=1MHz
88 pF
Output Capacitance Coss 19 pF
Reverse Transfer Capacitance Crss 11 pF
Turn-ON Delay Time td(on)
See specied Test Circuit.
3.4 ns
Rise Time tr 3.6 ns
Turn-OFF Delay Time td(off) 10.5 ns
Fall Time tf4.0 ns
Total Gate Charge Qg
VDS=15V, VGS=10V, ID=1.8A
2.0 nC
Gate to Source Charge Qgs 0.33 nC
Gate to Drain “Miller” Charge Qgd 0.29 nC
Forward Diode Voltage VSD IS=1.8A, VGS=0V 0.86 1.2 V
Ordering number : ENA2280A