1
技术信息/TechnicalInformation
FB20R06W1E3_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-25
revision:3.0 ULapproved(E83335)
EasyPIM™模块采用第三代沟槽栅/场终止IGBT3和第三代发射极控制二极管带有温度检测NTC
EasyPIM™modulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandNTC
VCES = 600V
IC nom = 20A / ICRM = 40A
典型应用 TypicalApplications
• •辅助逆变器 AuxiliaryInverters
• •空调 AirConditioning
• •电机传动 MotorDrives
电气特性 ElectricalFeatures
• •低开关损耗 LowSwitchingLosses
• •低VCEsat LowVCEsat
• •沟槽栅IGBT3 TrenchIGBT3
• •VCEsat带正温度系数 VCEsatwithpositiveTemperatureCoefficient
机械特性 MechanicalFeatures
• •低热阻的三氧化二铝（Al2O3衬底 Al2O3SubstratewithLowThermalResistance
• •紧凑型设计 Compactdesign
• •PressFIT压接技术 PressFITContactTechnology
• •集成的安装夹使安装坚固 Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
DMX-Code
ContentoftheCode Digit
ModuleSerialNumber 1-5
ModuleMaterialNumber 6-11
ProductionOrderNumber 12-19
Datecode(ProductionYear) 20-21
Datecode(ProductionWeek) 22-23
2
技术信息/TechnicalInformation
FB20R06W1E3_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-25
revision:3.0
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage Tvj = 25°C VCES 600 V
连续集电极直流电流
ContinuousDCcollectorcurrent TC = 95°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC20
29 A
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent tP = 1 ms ICRM 40 A
总功率损耗
Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 94,0 W
栅极－发射极峰值电压
Gate-emitterpeakvoltage VGES +/-20 V
特征值/CharacteristicValues min. typ. max.
集电极－发射极饱和电压
Collector-emittersaturationvoltage IC = 20 A, VGE = 15 V
IC = 20 A, VGE = 15 V
IC = 20 A, VGE = 15 V
VCE sat
1,55
1,70
1,80
2,00
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage IC = 0,29 mA, VCE = VGE, Tvj = 25°C VGEth 4,9 5,8 6,5 V
栅极电荷
Gatecharge VGE = -15 V ... +15 V QG0,20 µC
内部栅极电阻
Internalgateresistor Tvj = 25°C RGint 0,0 Ω
输入电容
Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 1,10 nF
反向传输电容
Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,034 nF
集电极-发射极截止电流
Collector-emittercut-offcurrent VCE = 600 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA
栅极-发射极漏电流
Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload IC = 20 A, VCE = 300 V
VGE = ±15 V
RGon = 18 Ω
td on
0,02
0,02
0,02
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload IC = 20 A, VCE = 300 V
VGE = ±15 V
RGon = 18 Ω
tr
0,013
0,016
0,017
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload IC = 20 A, VCE = 300 V
VGE = ±15 V
RGoff = 18 Ω
td off
0,12
0,14
0,15
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload IC = 20 A, VCE = 300 V
VGE = ±15 V
RGoff = 18 Ω
tf
0,07
0,095
0,10
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse IC = 20 A, VCE = 300 V, LS = 50 nH
VGE = ±15 V, di/dt = 1800 A/µs (Tvj = 150°C)
RGon = 18 ΩEon
0,32
0,44
0,49
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断损耗能量(每脉冲）
Turn-offenergylossperpulse IC = 20 A, VCE = 300 V, LS = 50 nH
VGE = ±15 V, du/dt = 4100 V/µs (Tvj = 150°C)
RGoff = 18 ΩEoff
0,44
0,56
0,59
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
短路数据
SCdata VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt ISC 140
100 A
A
Tvj = 25°C
Tvj = 150°C
tP ≤ 8 µs,
tP ≤ 6 µs,
结－外壳热阻
Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 1,45 1,60 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,25 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
3
技术信息/TechnicalInformation
FB20R06W1E3_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-25
revision:3.0
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C VRRM 600 V
连续正向直流电流
ContinuousDCforwardcurrent IF20 A
正向重复峰值电流
Repetitivepeakforwardcurrent tP = 1 ms IFRM 40 A
I2t-值
I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C I²t 49,0
45,0 A²s
A²s
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage IF = 20 A, VGE = 0 V
IF = 20 A, VGE = 0 V
IF = 20 A, VGE = 0 V
VF
1,60
1,55
1,50
2,00
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent IF = 20 A, - diF/dt = 1800 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
IRM
34,0
38,0
40,0
A
A
A
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
恢复电荷
Recoveredcharge IF = 20 A, - diF/dt = 1800 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Qr
1,00
1,75
2,20
µC
µC
µC
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复损耗（每脉冲）
Reverserecoveryenergy IF = 20 A, - diF/dt = 1800 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Erec
0,21
0,37
0,47
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,95 2,15 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,35 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
二极管,整流器/Diode,Rectifier
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C VRRM 800 V
最大正向均方根电流(每芯片)
MaximumRMSforwardcurrentperchip TC = 80°C IFRMSM 50 A
最大整流器输出均方根电流
MaximumRMScurrentatrectifieroutput TC = 80°C IRMSM 60 A
正向浪涌电流
Surgeforwardcurrent tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C IFSM 450
360 A
A
I2t-值
I²t-value tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C I²t 1000
640 A²s
A²s
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage Tvj = 150°C, IF = 20 A VF0,85 V
反向电流
Reversecurrent Tvj = 150°C, VR = 800 V IR0,10 mA
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,95 1,05 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,95 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op °C
4
技术信息/TechnicalInformation
FB20R06W1E3_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-25
revision:3.0
IGBT,制动-斩波器/IGBT,Brake-Chopper
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage Tvj = 25°C VCES 600 V
连续集电极直流电流
ContinuousDCcollectorcurrent TC = 95°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC20
29 A
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent tP = 1 ms ICRM 40 A
总功率损耗
Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 94,0 W
栅极－发射极峰值电压
Gate-emitterpeakvoltage VGES +/-20 V
特征值/CharacteristicValues min. typ. max.
集电极－发射极饱和电压
Collector-emittersaturationvoltage IC = 20 A, VGE = 15 V
IC = 20 A, VGE = 15 V
IC = 20 A, VGE = 15 V
VCE sat
1,55
1,70
1,80
2,00
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage IC = 0,29 mA, VCE = VGE, Tvj = 25°C VGEth 4,9 5,8 6,5 V
栅极电荷
Gatecharge VGE = -15 V ... +15 V QG0,20 µC
内部栅极电阻
Internalgateresistor Tvj = 25°C RGint 0,0 Ω
输入电容
Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 1,10 nF
反向传输电容
Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,034 nF
集电极-发射极截止电流
Collector-emittercut-offcurrent VCE = 600 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA
栅极-发射极漏电流
Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload IC = 20 A, VCE = 300 V
VGE = ±15 V
RGon = 30 Ω
td on
0,03
0,03
0,03
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload IC = 20 A, VCE = 300 V
VGE = ±15 V
RGon = 30 Ω
tr
0,022
0,028
0,03
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload IC = 20 A, VCE = 300 V
VGE = ±15 V
RGoff = 30 Ω
td off
0,20
0,24
0,25
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload IC = 20 A, VCE = 300 V
VGE = ±15 V
RGoff = 30 Ω
tf
0,07
0,11
0,12
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse IC = 20 A, VCE = 300 V, LS = 50 nH
VGE = ±15 V
RGon = 30 ΩEon
0,45
0,55
0,60
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断损耗能量(每脉冲）
Turn-offenergylossperpulse IC = 20 A, VCE = 300 V, LS = 50 nH
VGE = ±15 V
RGoff = 30 ΩEoff
0,50
0,56
0,60
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
短路数据
SCdata VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt ISC 140
100 A
A
Tvj = 25°C
Tvj = 150°C
tP ≤ 8 µs,
tP ≤ 6 µs,
结－外壳热阻
Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 1,45 1,60 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,25 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
5
技术信息/TechnicalInformation
FB20R06W1E3_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-25
revision:3.0
二极管，制动-斩波器/Diode,Brake-Chopper
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C VRRM 600 V
连续正向直流电流
ContinuousDCforwardcurrent IF10 A
正向重复峰值电流
Repetitivepeakforwardcurrent tP = 1 ms IFRM 20 A
I2t-值
I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C I²t 12,5
9,50 A²s
A²s
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage IF = 10 A, VGE = 0 V
IF = 10 A, VGE = 0 V
IF = 10 A, VGE = 0 V
VF
1,60
1,55
1,50
2,00
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent IF = 10 A, - diF/dt = 1500 A/µs (Tvj=150°C)
VR = 300 V IRM
18,0
19,0
21,0
A
A
A
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
恢复电荷
Recoveredcharge IF = 10 A, - diF/dt = 1500 A/µs (Tvj=150°C)
VR = 300 V Qr
0,50
0,85
1,10
µC
µC
µC
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复损耗（每脉冲）
Reverserecoveryenergy IF = 10 A, - diF/dt = 1500 A/µs (Tvj=150°C)
VR = 300 V Erec
0,11
0,20
0,26
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 2,90 3,20 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,40 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues min. typ. max.
额定电阻值
Ratedresistance TC = 25°C R25 5,00 kΩ
R100偏差
DeviationofR100 TC = 100°C, R100 = 493 Ω ∆R/R -5 5 %
耗散功率
Powerdissipation TC = 25°C P25 20,0 mW
B-值
B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K
B-值
B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K
B-值
B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
6
技术信息/TechnicalInformation
FB20R06W1E3_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-25
revision:3.0
模块/Module
绝缘测试电压
Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV
内部绝缘
Internalisolation 基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140) Al2O3
爬电距离
Creepagedistance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 11,5
6,3 mm
电气间隙
Clearance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 10,0
5,0 mm
相对电痕指数
Comperativetrackingindex CTI > 200
min. typ. max.
杂散电感,模块
Strayinductancemodule LsCE 30 nH
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch RCC'+EE'
RAA'+CC' 8,00
4,00 mΩ
储存温度
Storagetemperature Tstg -40 125 °C
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp F 20 - 50 N
重量
Weight G24 g
Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt
The current under continuous operation is limited to 25 A rms per connector pin
7
技术信息/TechnicalInformation
FB20R06W1E3_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-25
revision:3.0
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
VCE [V]
IC [A]
0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0
0
4
8
12
16
20
24
28
32
36
40
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
0
4
8
12
16
20
24
28
32
36
40
VGE = 19 V
VGE = 17 V
VGE = 15 V
VGE = 13 V
VGE = 11 V
VGE = 9 V
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
VGE [V]
IC [A]
5 6 7 8 9 10 11 12
0
4
8
12
16
20
24
28
32
36
40
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=18Ω,RGoff=18Ω,VCE=300V
IC [A]
E [mJ]
0 5 10 15 20 25 30 35 40
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
8
技术信息/TechnicalInformation
FB20R06W1E3_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-25
revision:3.0
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=20A,VCE=300V
RG [Ω]
E [mJ]
0 20 40 60 80 100 120 140 160 180 200
0,0
0,4
0,8
1,2
1,6
2,0
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJH=f(t)
t [s]
ZthJH [K/W]
0,001 0,01 0,1 1 10
0,1
1
10
ZthJH : IGBT
i:
ri[K/W]:
τi[s]:
1
0,1901
0,0005
2
0,4681
0,005
3
1,003
0,05
4
1,039
0,2
反偏安全工作区IGBT,逆变器（RBSOA）
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=18Ω,Tvj=150°C
VCE [V]
IC [A]
0 200 400 600 800
0
4
8
12
16
20
24
28
32
36
40
44
IC, Modul
IC, Chip
正向偏压特性二极管,逆变器（典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2
0
4
8
12
16
20
24
28
32
36
40
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
9
技术信息/TechnicalInformation
FB20R06W1E3_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-25
revision:3.0
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=18Ω,VCE=300V
IF [A]
E [mJ]
0 4 8 12 16 20 24 28 32 36 40
0,0
0,2
0,4
0,6
0,8
Erec, Tvj = 125°C
Erec, Tvj = 150°C
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=20A,VCE=300V
RG [Ω]
E [mJ]
0 20 40 60 80 100 120 140 160 180 200
0,0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
Erec, Tvj = 125°C
Erec, Tvj = 150°C
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJH=f(t)
t [s]
ZthJH [K/W]
0,001 0,01 0,1 1 10
0,1
1
10
ZthJH : Diode
i:
ri[K/W]:
τi[s]:
1
0,3013
0,0005
2
0,7006
0,005
3
1,3873
0,05
4
0,9109
0,2
正向偏压特性二极管,整流器（典型)
forwardcharacteristicofDiode,Rectifier(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,2 0,4 0,6 0,8 1,0 1,2
0
4
8
12
16
20
24
28
32
36
40
Tvj = 25°C
Tvj = 150°C
10
技术信息/TechnicalInformation
FB20R06W1E3_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-25
revision:3.0
输出特性IGBT,制动-斩波器（典型)
outputcharacteristicIGBT,Brake-Chopper(typical)
IC=f(VCE)
VGE=15V
VCE [V]
IC [A]
0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0
0
4
8
12
16
20
24
28
32
36
40
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
正向偏压特性二极管，制动-斩波器（典型)
forwardcharacteristicofDiode,Brake-Chopper(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2
0
2
4
6
8
10
12
14
16
18
20
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
TC [°C]
R[Ω]
0 20 40 60 80 100 120 140 160
100
1000
10000
100000
Rtyp
11
技术信息/TechnicalInformation
FB20R06W1E3_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-25
revision:3.0
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
In fineon
12
技术信息/TechnicalInformation
FB20R06W1E3_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:MB
dateofpublication:2013-11-25
revision:3.0
使用条件和条款
使用条件和条款
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exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
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