Ordering number : ENA2280A MCH6661 N-Channel Power MOSFET 30V, 1.8A, 188m, Dual MCPH6 http://onsemi.com Features * * * ON-resistance Nch : RDS(on)1=145mW (typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Value Conditions Unit Drain to Source Voltage VDSS 30 Gate to Source Voltage VGSS 20 V Drain Current (DC) ID 1.8 A Drain Current (Pulse) IDP PW10s, duty cycle1% 7.2 A Power Dissipation PD When mounted on ceramic substrate (900mm2x0.8mm) 1unit 0.8 W Junction Temperature Tj Storage Temperature Purposes, Tstg Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds V 150 C --55 to +150 C 260 C TL This product is designed to "ESD immunity < 200V*", so please take care when handling. * Machine Model Thermal Resistance Ratings Parameter Symbol Junction to Ambient RJA Value Unit 156.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Parameter Symbol Conditions Value min typ Unit max Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V Gate to Source Leakage Current VGS=16V, VDS=0V VDS=10V, ID=1mA Forward Transconductance IGSS VGS(th) gFS VDS=10V, ID=0.9A 1.1 RDS(on)1 RDS(on)2 ID=0.9A, VGS=10V ID=0.5A, VGS=4.5V 145 188 mW Static Drain to Source On-State Resistance 245 343 mW RDS(on)3 ID=0.5A, VGS=4V 270 378 mW Gate Threshold Voltage Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 30 V 1.2 1 mA 10 mA 2.6 V S 88 pF 19 pF Crss 11 pF Turn-ON Delay Time td(on) 3.4 ns Rise Time tr 3.6 ns Turn-OFF Delay Time td(off) 10.5 ns Fall Time tf 4.0 ns Total Gate Charge Qg 2.0 nC 0.33 nC Gate to Source Charge Qgs Gate to Drain "Miller" Charge Qgd Forward Diode Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=15V, VGS=10V, ID=1.8A 0.29 IS=1.8A, VGS=0V 0.86 nC 1.2 V ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2014 January, 2014 12114HK TC-00003088/11014HK PE No. A2280-1/5 MCH6661 ID -- VDS V 1.6 0.4 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Static Drain to Source On-State Resistance, RDS(on) -- m Static Drain to Source On-State Resistance, RDS(on) -- m ID=0.5A 0.9A 350 300 250 200 150 100 50 0 2 4 6 8 10 12 14 Gate to Source Voltage, VGS -- V 2 Ta 0.1 7 5 C 25 C 75 3 2 3.5 4.0 IT13108 450 400 0.5A , I D= V 0 . =4 VGS 0.5A , I D= 4.5V = V GS =0.9A 0.0V, I D V GS=1 350 300 250 200 150 100 50 --40 --20 0 20 40 60 80 100 120 140 160 IT16668 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.01 7 0.001 3.0 Ambient Temperature, Ta -- C Forward Diode Current, IS -- A C -25 =- 3 2.5 500 3 2 1.0 7 5 2.0 550 0 --60 16 VDS=10V 2 1.5 RDS(on) -- Ta IT16667 gFS -- ID 3 1.0 600 500 400 0.5 Gate to Source Voltage, VGS -- V Ta=25C 450 0 IT16666 RDS(on) -- VGS 550 0 0 1.0 75C 0.1 Ta= --25 C 25C 0 600 Forward Transfer Admittance, | yfs | -- S 0.2 VGS=2.5V Drain to Source Voltage, VDS -- V 2 3 5 7 0.01 2 3 5 7 0.1 2 3 SW Time -- ID 5 0.001 0.2 5 7 1.0 IT13111 Drain Current, ID -- A Ciss, Coss, Crss -- pF td(off) 10 7 tf td(on) tr 3 0.6 0.8 1.0 Ciss, Coss, Crss -- VDS 1.2 IT13112 f=1MHz 2 2 5 0.4 Forward Diode to Source Voltage, VSD -- V 3 VDD=15V VGS=10V 3 Switching Time, SW Time -- ns 0.6 0.4 3.0V 0.2 0 0.8 C 0.6 1.0 25 C 0.8 1.2 --25 3.5V 15.0V 1.0 1.4 Ta= 75 C Drain Current, ID -- A 10.0V 1.2 VDS=10V 1.8 4.0 4.5 6.0V 1.4 ID -- VGS(th) 2.0 Ta=25C 8.0V 1.6 Drain Current, ID -- A V 1.8 2 Ciss 100 7 5 3 Coss 2 Crss 10 7 1.0 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 IT13113 5 0 5 10 15 20 25 Drain to Source Voltage, VDS -- V 30 IT13114 No. A2280-2/5 MCH6661 VGS -- Qg 10 9 Drain Current, ID -- A 8 7 5 4 3 3 2 3 2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 0.01 0.01 2.0 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 10 2 3 Drain to Source Voltage, VDS -- V 5 7 100 IT16670 When mounted on ceramic substrate (900mm2x0.8mm) 1unit 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 100 160 IT16613 RJA -- Pulse Time 1000 Thermal Resistance, RJA -- C/W Ta=25C Single pulse When mounted on ceramic substrate (900mm2x0.8mm) 1unit IT16669 PD -- Ta 1.0 1.8 s Operation in this area is limited by RDS(on). 0.1 7 5 1 0 0 ID=1.8A 1.0 7 5 2 0 10 DC 6 IDP=7.2A (PW10s) s 1m s m n s 10 io 0m erat op 3 2 SOA 10 Gate to Source Voltage, VGS -- V 10 7 5 VDS=15V ID=1.8A Duty Cycle=0.5 0.2 0.1 10 1 0.1 0.05 0.02 0.01 ulse le P Sing When mounted on ceramic substrate (900mm2x0.8mm) 1unit 2 0.000001 3 5 7 2 0.00001 3 5 7 0.0001 2 3 5 7 0.001 2 3 5 7 Pulse Time, PT -- s 0.01 2 3 5 7 0,1 2 3 5 7 1.0 2 3 5 7 10 HD140108 No. A2280-3/5 MCH6661 Package Dimensions MCH6661-TL-W SC-88FL / MCPH6 CASE 419AS ISSUE O unit : mm 1:Source1 2:Gate1 3:Drain2 4:Source2 5:Gate2 6:Drain1 2.1 0.6 Recommended Soldering Footprint 0.4 0.65 0.65 Ordering & Package Information Device Shipping note MCPH6, SC-88,SOT-363 3,000 pcs. / reel Pb-Free and Halogen Free Electrical Connection 6 5 TL Switching Time Test Circuit 10V 0V 4 XN LOT No. Package Marking LOT No. MCH6661-TL-W Packing Type:TL VDD=15V VIN ID=0.8A RL=18.6 VIN D PW=10s D.C.1% VOUT G 1 2 3 Top view P.G MCH6661 50 S No. A2280-4/5 MCH6661 Note on usage : Since the MCH6661 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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