Product Datasheet Search Results:

ALT29926A.pdf64 Pages, 6744 KB, Original
VBI9926A.pdf2 Pages, 263 KB, Original
APM9926AK.pdf10 Pages, 116 KB, Original
APM9926AK
Anpec Electronics Corporation
Dual N-Channel Enhancement Mode MOSFET
APM9926AKC.pdf10 Pages, 138 KB, Original
APM9926AKC
Anpec Electronics Corporation
MOSFET, Dual N-Channel Enhancement Mode MOSFET, SOIC, 8-Pin
APM9926AKC-TR.pdf10 Pages, 566 KB, Original
APM9926AKC-TR
Anpec Electronics Corporation
20 V, dual N-channel enhancement mode MOSFET
APM9926AKC-TRG.pdf10 Pages, 153 KB, Original
APM9926AKC-TRG
Anpec Electronics Corp.
6 A, 20 V, 0.032 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
APM9926AKC-TRL.pdf10 Pages, 138 KB, Original
APM9926AKC-TRL
Anpec Electronics Corporation
MOSFET, Dual N-Channel Enhancement Mode MOSFET, SOIC, 8-Pin, Tape and Reel
APM9926AKC-TU.pdf10 Pages, 116 KB, Original
APM9926AKC-TU
Anpec Electronics Corporation
Dual N-Channel Enhancement Mode MOSFET
APM9926AKC-TUL.pdf10 Pages, 116 KB, Original
APM9926AKC-TUL
Anpec Electronics Corporation
Dual N-Channel Enhancement Mode MOSFET
APM9926AOC-TR.pdf10 Pages, 138 KB, Original
APM9926AOC-TR
Anpec Electronics Corporation
MOSFET, Dual N-Channel Enhancement Mode MOSFET, TSSOP, 8-Pin, Tape and Reel
APM9926AOC-TRL.pdf10 Pages, 138 KB, Original
APM9926AOC-TRL
Anpec Electronics Corporation
MOSFET, Dual N-Channel Enhancement Mode MOSFET, TSSOP, 8-Pin, Tape and Reel

Product Details Search Results:

2_power/ALT29926A
731 Bytes - 12:16:00, 18 January 2025
2_power/ALT39926A
731 Bytes - 12:16:00, 18 January 2025
2_power/VBI9926A
588 Bytes - 12:16:00, 18 January 2025
Anpec.com.tw/APM9926AKC-TRG
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","EU RoHS Compliant":"Yes","Configuration":"COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0320 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SE...
1552 Bytes - 12:16:00, 18 January 2025
Fairchildsemi.com/FDS9926A
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1.5V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"6.5A","Gate Charge (Qg) @ Vgs":"9nC @ 4.5V","Product Photos":"8-SOIC","PCN Design/Specification":"Mold Compound 12/Dec/2007","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"30 mOhm @ 6.5A, 4.5V","Datasheets":"FDS9926A","FET Type":"2 N-Channel (D...
1861 Bytes - 12:16:00, 18 January 2025
Fairchildsemi.com/FDS9926AD84Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown...
1527 Bytes - 12:16:00, 18 January 2025
Fairchildsemi.com/FDS9926AF011
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown...
1531 Bytes - 12:16:00, 18 January 2025
Fairchildsemi.com/FDS9926AL86Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown...
1526 Bytes - 12:16:00, 18 January 2025
Fairchildsemi.com/FDS9926AL99Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown...
1527 Bytes - 12:16:00, 18 January 2025
Fairchildsemi.com/FDS9926A_Q
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b110 V","Channel Mode":"Enhancement","Power Dissipation":"2 W","Continuous Drain Current":"6.5 A","Mounting":"Surface Mount","Drain-Source On-Volt":"20 V","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC N","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1481 Bytes - 12:16:00, 18 January 2025
Fairchildsemi.com/FDS9926AS62Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown...
1524 Bytes - 12:16:00, 18 January 2025
Fairchildsemi.com/FDW9926A
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"8-TSSOP","Family":"FETs - Arrays","Vgs(th) (Max) @ Id":"1.5V @ 250\u00b5A","Series":"PowerTrench\u00ae","Standard Package":"2,500","Supplier Device Package":"8-TSSOP","Datasheets":"FDW9926A","Rds On (Max) @ Id, Vgs":"32 mOhm @ 4.5A, 4.5V","FET Type":"2 N-Channel (Dual)","Packaging":"Tape & Reel (TR)","Power - Max":"600mW","Package / Case":"8-TSSOP (0.173\", 4.40mm Width)","Mounting Type":"Surface Mount","Drain t...
1570 Bytes - 12:16:00, 18 January 2025

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