Dual N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM9926AK
Features
Applications
Pin Description
Ordering and Marking Information
N-Channel MOSFET
APM9926A
Handling Code
Temp. Range
Package C ode
Package C ode
K : S OP - 8
O perating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube T R : T ape & Reel
Lead Free C ode
L : Lead Free Device Blank : Original Device
APM 9926A K : APM9926A
XXXXX XXXXX - Date Code
Lead Free C ode
• 20V/6A,
RDS(ON) =28mΩ(typ.) @ VGS =4.5V
RDS(ON) =34mΩ(typ.) @ VGS =2.5V
••
••
• Super High Dense Cell Design
••
••
• Reliable and Rugged
••
••
• Lead Free Available (RoHS Compliant)
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G1
S1
S2
G2
D1
D1
D2
D2
Top View of SOP − 8
D2
(5)
G2
S2
D2
(6)
(4)
(3)
G1
S1
D1 D1
(8) (7)
(2)
(1)
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw2
APM9926AK
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Rating Unit
VDSS Drain-Source Voltage 20
VGSS Gate-Source Voltage ±10 V
ID* Continuous Drain Current 6
IDM* 300µs Pulsed Drain Current VGS=4.5V 20 A
IS* Diode Continuous Forward Current 1.7 A
TJ Maximum Junction Temperature 150
TSTG Storage Temperature Range -55 to 150 °C
TA=25°C 2
PD* Maximum Power Dissipation TA=100°C 0.8 W
RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W
Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec.
APM9926AK
Symbol Parameter Test Condition
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 20 V
VDS=16V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current TJ=85°C 30 µA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 0.5 0.7 1.5 V
IGSS Gate Leakage Current VGS=±10V, VDS=0V ±100 nA
VGS=4.5V, IDS=6A 28 32
RDS(ON) a Drain-Source On-state Resistance VGS=2.5V, IDS=5.2A 34 45
mΩ
VSDa Diode Forward Voltage ISD=1.7A, VGS=0V 0.7 1.3 V
Gate Charge Characteristics b
Qg Total Gate Charge 10 13
Qgs Gate-Source Charge 3.6
Qgd Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=6A 2
nC
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw3
APM9926AK
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM9926A K
Symbol Parameter Test Condition
Min. Typ. Max. Unit
Dynamic Characteristicsb
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 9 Ω
Ciss Input Capacitance 520
Coss Output Capacitance 110
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz 70
pF
td(ON) Turn-on Delay Time 17 32
Tr Turn-on Rise Time 15 28
td(OFF) Turn-off Delay Time 45 82
Tf Turn-off Fall Time
VDD=10V, RL=10Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω 25 46
ns
Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw4
APM9926AK
1E-4 1E-3 0.01 0.1 1 10 30
1E-3
0.01
0.1
1
2
Mounted on 1in2 pad
RθJA : 62.5 oC/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Typical Characteristics
ID - Drain Current (A)
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Power Dissipation
Ptot - Power (W)
Tj - Junction Temperature (°C)
ID - Drain Current (A)
0 20406080100120140160
0.0
0.5
1.0
1.5
2.0
2.5
TA=25oC
0 20406080100120140160
0
1
2
3
4
5
6
7
TA=25oC,VG=4.5V
0.01 0.1 1 10 100
0.01
0.1
1
10
50
Rds(on) Limit
1s
TA=25oC
10ms
300µs
1ms
100ms
DC
Normalized Transient Thermal Resistance
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw5
APM9926AK
RDS(ON) - On - Resistance (mΩ)
Drain-Source On Resistance
ID - Drain Current (A)
Tj - Junction Temperature (°C)
Gate Threshold Voltage
VDS - Drain-Source V oltage (V)
ID - Drain Current (A)
Output Characteristics
T ransfer Characteristics
VGS - Gate - Source Voltage (V)
ID - Drain Current (A)
Normalized Threshold V oltage
Typical Characteristics (Cont.)
012345
0
2
4
6
8
10
12
14
16
18
20 VGS= 2, 3, 4, 5, 6, 7, 8, 9, 10V
1V
0.5V
048121620
10
15
20
25
30
35
40
45
50
55
60
VGS= 4.5V
VGS=10V
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
4
8
12
16
20
Tj=125oC
Tj=25oC
Tj=-55oC
-50 -25 0 25 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6 IDS =250µA
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw6
APM9926AK
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
Normalized On Resistance
Tj - Junction Temperature (°C)
C - Capacitance (pF)
VSD - Source - Drain Voltage (V)
Source-Drain Diode Forward
IS - Source Current (A)
Capacitance Gate Charge
QG - Gate Charge (nC)
VGS - Gate - source Voltage (V)
Typical Characteristics (Cont.)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1
10
20
Tj=150oC
Tj=25oC
0 4 8 121620
0
100
200
300
400
500
600
700
800 Frequency=1MHz
Crss Coss
Ciss
-50 -25 0 25 50 75 100 125 150
0.0
0.4
0.8
1.2
1.6
2.0
2.4
RON@Tj=25oC: 28mΩ
VGS= 4.5V
ID = 6A
0 4 8 121620
0
1
2
3
4
5
6
7
8
9
10 VDS= 10V
ID = 6A
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw7
APM9926AK
Packaging Information
Millimeters Inches
Dim Min. Max. Min. Max.
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC
φ 18
°8°
HE
e1 e2
0.015X45
D
A
A1
0.004max.
1
L
SOP-8 pin ( Reference JEDEC Registration MS-012)
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw8
APM9926AK
Ter minal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
t 2 5 C to P ea k
tp
Ramp-up
tL
Ramp-down
ts
Preheat
Tsmax
Tsmin
TL
TP
25
Temperature
Time
Critical Z one
TL to TP
°
Reflow Condition (IR/Convection or VPR Reflow)
Classification Reflow Profiles
Physical Specifications
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate
(TL to TP) 3°C/second max. 3°C/second max.
Preheat
- Temperature Min (T s min)
- Temperature Max (T smax )
- Time (min to max) (ts)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
- Temperature (TL)
- Time (tL) 183°C
60-150 seconds 217°C
60-150 seconds
Peak/Classificatioon Temperature (Tp) See table 1 See table 2
Time within 5°C of actual
Peak Temperature (tp) 10-30 seconds 20-40 seconds
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25 °C to Peak Temperature 6 minutes max. 8 minutes max.
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw9
APM9926AK
Carrier Tape & Reel Dimensions
t
Ao
E
W
Po P
Ko
Bo
D1
D
F
P1
Table 1. SnPb Entectic Process – Pack age Pea k Reflow T empe ratures
Pack age T h ickn ess Vo lu m e m m3
<350 Volume mm3
≥350
< 2.5 mm 240 +0/-5°C 225 +0/-5°C
≥2.5 mm 225 + 0/-5°C 225 +0/-5°C
Table 2. Pb-free Process – Pack age C lassification Reflow T emperatures
Packag e T hickness Vo lume m m 3
<350 V o lu me mm3
350-2000 V o lu me mm3
>2000
< 1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*
1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C*
≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C*
*Tolerance : T he device m anu facturer/supplier shall a s s u r e p r o c e s s c o mp a tib ilit y u p to an d
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C ) at the rated M SL level.
Classification Reflow Profiles(Cont.)
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Reliability Test Program
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw10
APM9926AK
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin T ien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOP- 8 12 9.3 2500
Carrier Tape & Reel Dimensions(Cont.)
A
J
B
T2
T1
C
Application A B C J T1 T2 W P E
330±1 62
± 1.5 12.75 +
0.1 5 2 + 0.5 12.4 +0.2 2± 0.2 12 + 0.3
- 0.1 8± 0.1 1.75± 0.1
F D D1 Po P1 Ao Bo Ko t
SOP-8 5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013
(mm)
