Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003 www.anpec.com.tw2
APM9926A
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol Parameter Rating Unit
SO-8 1.6
TA=25°CTSSOP-8 1.0
SO-8 0.625
PDMaximum Power Dissipation
TA=100°CTSSOP-8 0.4
W
TJMaximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
RθjA Thermal Resistance – Junction to Ambient 80 °C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.
APM9926A
Symbol Parameter Test Condition
Min. Typ. Max. Unit
Static
BVDSS Drain-Source Break down
Voltage VGS=0V , IDS=250µA 20 V
IDSS Zero Gate Voltage Drain
Current VDS=16V , VGS=0V
1 µA
VGS(th) Gate T hreshold Voltage VDS=VGS , IDS=250µA 0.5 0.7 1.5 V
IGSS Gate Leak age Current VGS=±10V , VDS=0V ±100 nA
VGS=4.5V , IDS=6A 28 32
RDS(ON)a Drain-Source On-state
Resistance VGS=2.5V , IDS=5.2A 34 45 mΩ
VSDa Diode Forward Voltage ISD=1.7A , VGS=0V 0.7 1.3 V
Dynamicb
Qg Total Gate Charge 10 12
Qgs Gate-Source Cha r ge 3.6
Qgd Gate-Drain Charge
VDS=10V , IDS= 6A
VGS=4.5V ,
2 nC
td(ON) Turn-on De lay Time 17
Tr Turn-on Rise Time 15
td(OFF) Turn-off Delay Time 45
Tf Turn-off Fall Time
VDD=10V , IDS=1A ,
VGEN=4.5V , RG=0.2Ω
25
ns
Ciss Input Capacitance 520
Coss Output Capacitance 110
Crss Reverse Transfer Capacitance
VGS=0V
VDS=15V
Fre
uenc
=1.0MHz 70 pF
Notesa : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b : Guaranteed by design, not subject to production testing
Electrical Characteristics (TA = 25°C unless otherwise noted)