Dual N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003 www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM9926A
Features
Applications
20V/6A , RDS(ON)=28m(typ.) @ VGS=4.5V
RDS(ON)=34m(typ.) @ VGS=2.5V
Super High Dense Cell Design for Extremely
Low RDS(ON)
Reliable and Rugged
SO-8 and TSSOP-8 Packages
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Pin Description
SO-8 TSSOP-8
Ordering and Marking Information
APM9926A
Handling Code
Tem p. Range
Package Code
Package Code
K : SO-8 O : T SS OP-8
O peration Junction Temp. R ange
C : -5 5 to 1 5 0 C
Handling Code
T R : Tape & R eel
Lead Free C ode
L : Lead Free D evice B lank : O riginal Device
°
AP M 9926A K /O : APM9926A
XXXXX XXXXX - D ate Code
Lead Free C ode
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol Parameter Rating Unit
VDSS Drain-Source Vo ltage 20
VGSS Gate-Source Voltage ±10 V
ID*Maximum D rain Current – Continuous 6
IDM Maximum D rain Current – Pulsed 20 A
* Surface Mounted on FR4 Board, t 10 sec.
G1
S1
D
G2
S2
D
G1
S1
D
S1
G2
S2
D
S2
1
2
3
45
6
7
8
D1
S1
S1
G1 G2
S2
S2
D2
1
2
3
45
6
7
8S1
G1
S2
G2 D
D
D
D
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003 www.anpec.com.tw2
APM9926A
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol Parameter Rating Unit
SO-8 1.6
TA=25°CTSSOP-8 1.0
SO-8 0.625
PDMaximum Power Dissipation
TA=100°CTSSOP-8 0.4
W
TJMaximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
RθjA Thermal Resistance – Junction to Ambient 80 °C/W
* Surface Mounted on FR4 Board, t 10 sec.
APM9926A
Symbol Parameter Test Condition
Min. Typ. Max. Unit
Static
BVDSS Drain-Source Break down
Voltage VGS=0V , IDS=250µA 20 V
IDSS Zero Gate Voltage Drain
Current VDS=16V , VGS=0V
1 µA
VGS(th) Gate T hreshold Voltage VDS=VGS , IDS=250µA 0.5 0.7 1.5 V
IGSS Gate Leak age Current VGS=±10V , VDS=0V ±100 nA
VGS=4.5V , IDS=6A 28 32
RDS(ON)a Drain-Source On-state
Resistance VGS=2.5V , IDS=5.2A 34 45 m
VSDa Diode Forward Voltage ISD=1.7A , VGS=0V 0.7 1.3 V
Dynamicb
Qg Total Gate Charge 10 12
Qgs Gate-Source Cha r ge 3.6
Qgd Gate-Drain Charge
VDS=10V , IDS= 6A
VGS=4.5V ,
2 nC
td(ON) Turn-on De lay Time 17
Tr Turn-on Rise Time 15
td(OFF) Turn-off Delay Time 45
Tf Turn-off Fall Time
VDD=10V , IDS=1A ,
VGEN=4.5V , RG=0.2
25
ns
Ciss Input Capacitance 520
Coss Output Capacitance 110
Crss Reverse Transfer Capacitance
VGS=0V
VDS=15V
Fre
q
uenc
y
=1.0MHz 70 pF
Notesa : Pulse test ; pulse width 300µs, duty cycle 2%
b : Guaranteed by design, not subject to production testing
Electrical Characteristics (TA = 25°C unless otherwise noted)
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003 www.anpec.com.tw3
APM9926A
02468101214161820
10
15
20
25
30
35
40
45
50
55
60
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
5
10
15
20
012345
0
4
8
12
16
20
Typical Characteristics
0.5V
ID-Drain Current (A)
Transfer Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
VGS - Gate-to-Source Voltage (V)
-50 -25 0 25 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Threshold V oltage vs. Junction Temperature
Tj - Junction Temperature (°C)
VGS(th)-Threshold V oltage (V)
(Normalized)
IDS=250uA
RDS(ON)-On-Resistance ()
On-Resistance vs. Drain Current
ID - Drain Current (A)
VGS=4.5V
Output Characteristics
ID-Drain Current (A)
VGS=2,3,4,5,6,7,8,9,10V 1V
VDS - Drain-to-Source V oltage (V)
VGS=2.5V
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003 www.anpec.com.tw4
APM9926A
012345678910
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0 2 4 6 8 10 12 14 16 18
0
2
4
6
8
10
0 5 10 15 20
0
125
250
375
500
625
750
-50 -25 0 25 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Typical Characteristics (Cont.)
VGS - Gate-to-Source Voltage (V)
RDS(ON)-On-Resistance ()
ID=6A
On-Resistance vs. Gate-to-Source V oltage
RDS(ON)-On-Resistance ()
(Normalized)
On-Resistance vs. Junction Temperature
VGS=4.5V
ID=6A
TJ - Junction T emperature (°C)
VDS - Drain-to-Source Voltage (V)
Capacitance
Capacitance (pF)
Ciss
Coss
Crss
Gate Charge
QG - Gate Charge (nC)
VGS-Gate-Source V oltage (V)
VDS=10V
ID=6A Frequency=1MHz
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003 www.anpec.com.tw5
APM9926A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1
10
20
Source-Drain Diode Forward V oltage
IS-Source Current (A)
TJ=150°C TJ=25°C
VSD -Source-to-Drain V oltage (V)
Typical Characteristics (Cont.)
0.01 0.1 1 10
0
20
40
60
80
Power (W)
Single Pulse Power
Time (sec)
1E-4 1E-3 0.01 0.1 1 10
0.01
0.1
1
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=80°C/W
3.TJM-TA=PDMZthJA
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
D=0.02
SINGLE PULSE
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003 www.anpec.com.tw6
APM9926A
Packaging Information
Millimeters Inches
Dim Min. Max. Min. Max.
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC
φ 18
°8°
HE
e1 e2
0.015X45
D
A
A1
0.004max.
1
L
SOP-8 pin ( Reference JEDEC Registration MS-012)
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003 www.anpec.com.tw7
APM9926A
Millimeters Inches
Dim Min. Max. Min. Max.
A 1.2 0.047
A1 0.00 0.15 0.000 0.006
A2 0.80 1.05 0.031 0.041
b 0.19 0.30 0.007 0.012
D 2.9 3.1 0.114 0.122
e 0.65 BSC 0.026 BSC
E 6.40 BSC 0.252 BSC
E1 4.30 4.50 0.169 0.177
L 0.45 0.75 0.018 0.030
L1 1.0 REF 0.039REF
R 0.09 0.004
R1 0.09 0.004
S 0.2 0.008
φ
10
°8°0°8°
φ
212
° REF 12° REF
φ
312
° REF 12° REF
L
(L1)
(3)
S
(2)
0.25
GAUGE
PLANE
1
b
D
e
2 x E / 2
8
12 e/2
E1 E
7
A1
A2
A
TSSOP-8
Packaging Information (Cont.)
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003 www.anpec.com.tw8
APM9926A
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
t 2 5 C to P ea k
tp
Ramp-up
tL
Ramp-down
ts
Preheat
Tsmax
Tsmin
TL
TP
25
Temperature
Time
Critical Zone
TL to TP
°
Reflow Condition (IR/Convection or VPR Reflow)
Classificatin Reflow Profiles
Physical Specifications
Sn-Pb Eutectic Assembly Pb-Free Assembly
Profile Feature Large Body Small Body Large Body Small Body
Average ramp-up rate
(TL to TP) 3°C/second max. 3°C/second max.
Preheat
- Temperature Min (Tsmin)
- Temperature Mix (Tsmax)
- Time (min to max)(ts)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Tsmax to TL
- Ramp-up Rate 3°C/second max
Tsmax to TL
- Temperature(TL)
- Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(Tp) 225 +0/-5°C 240 +0/-5°C 245 +0/-5°C 250 +0/-5°C
Time within 5°C of actual Peak
Temperature(tp) 10-30 seconds 10-30 seconds 10-30 seconds 20-40 seconds
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25°C to Peak Temperature
6 minutes max. 8 minutes max.
Note: All temperatures refer to topside of the package. Measured on the body surface.
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003 www.anpec.com.tw9
APM9926A
Carrier Tape & Reel Dimensions
Application A B C J T1 T2 W P E
330 ± 162 +1.512.75+
0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1 .75 ±0.1
F D D1 Po P1 Ao Bo Ko tSOP- 8
5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5 .2 ± 0 . 1 2 .1 ± 0.1 0.3±0.013
Application A B C J T1 T2 W P E
330 ± 162 +1.512.75+
0.15 2 + 0.5 12.4 ± 0.2 2 ± 0.2 1 2± 0. 3 8± 0.1 1.75 ±0.1
F D D1 Po P1 Ao Bo Ko tTSSOP-8
5.5 ± 0 . 1 1 .5 + 0 .1 1 .5 + 0 .1 4 .0 ± 0.1 2.0 ± 0.1 7.0 ± 0.1 3.6 ± 0.3 1 .6 ± 0.1 0.3 ±0.013
A
J
B
T2
T1
C
t
Ao
E
W
Po P
Ko
Bo
D1
D
F
P1
Test item Method Description
SOLDERABIL IT Y MIL-STD-8 83D-2 003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Reliability test program
(mm)
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003 www.anpec.com.tw10
APM9926A
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin T ien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOP- 8 12 9.3 2500
TSSO P- 8 12 9.3 2500