Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Trans...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Other Drawings":"SOT-363 Package Top SOT-363 Package Side 1 SOT-363 Package Side 2","Package \/ Case":"6-TSSOP, SC-88, SOT-363","Gate Charge (Qg) @ Vgs":"-","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 50mA, 5V","Product Photos":"SOT-363 PKG","PCN Design\/Specification":"Green Encapsulate Change 09\/July\/2007 Bond Wire 3\/May\/2011","PCN Other":"Multiple Device Changes 29\/Apr\/2013","Datasheets"...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Polarity":"N\/P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.115\/0.13(A)","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"60(V)","Frequency (Max)":"Not Required MHz","Pin Count":"6","Packaging":"Tape and Reel","Power Dissipation":"0.2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-363","Output Power (Max)":"Not Required W","Rad Hardened":"No","Powe...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60@Q 1|50@Q 2 V","Typical Turn-Off Delay Time":"20(Max)@Q 1|25@Q 2 ns","Description":"Value","Maximum Continuous Drain Current":"0.115@Q 1|0.13@Q 2 A","Package":"6SOT-363","Typical Turn-On Delay Time":"20(Max)@Q 1|7.5@Q 2 ns","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"N|P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"7000@10V@Q 1|10000@5V@Q 2 mOhm","Manufacturer":"Panjit"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60@Q 1|50@Q 2 V","Typical Turn-Off Delay Time":"20(Max)@Q 1|25@Q 2 ns","Description":"Value","Maximum Continuous Drain Current":"0.115@Q 1|0.13@Q 2 A","Package":"6SOT-363","Typical Turn-On Delay Time":"20(Max)@Q 1|7.5@Q 2 ns","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"N|P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"7000@10V@Q 1|10000@5V@Q 2 mOhm","Manufacturer":"Panjit"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...