BSS8402DW
Document number: DS30380 Rev. 13 - 2 1 of 7
www.diodes.com September 2011
© Diodes Incorporated
BSS8402DW
NEW PRODUCT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair
Lead Free/RoHS Compliant (Note 1)
"Green" Device (Notes 2 and 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Qualification Case Packaging
BSS8402DW-7-F Commercial SOT363 3000/Tape & Reel
BSS8402DWQ-13-F Automotive SOT363 10000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016
Code P R S T U V W X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT363
Top View Top View
Internal Schematic
S
2
D
2
Q
1
Q
2
D
1
S
1
G
2
G
1
KNP = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: R = 2004)
M = Month (ex: 9 = September)
KNP
YM
BSS8402DW
Document number: DS30380 Rev. 13 - 2 2 of 7
www.diodes.com September 2011
© Diodes Incorporated
BSS8402DW
NEW PRODUCT
Maximum Ratings – Total Device @TA = 25°C unless otherwise specified
Characteristic Symbol
V
alue Units
Power Dissipation (Note 5) PD 200 mW
Thermal Resistance, Junction to Ambient RθJA 625 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Maximum Ratings N-CHANNEL – Q1, 2N7002 Section @TA = 25°C unless otherwise specified
Characteristic Symbol
V
alue Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS 1.0MΩ VDGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 5) Continuous
Continuous @ 100°C
Pulsed ID 115
73
800 mA
Maximum Ratings P-CHANNEL – Q2, BSS84 Section @TA = 25°C unless otherwise specified
Characteristic Symbol
V
alue Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage RGS 20KΩ VDGR -50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 5) Continuous ID -130 mA
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.
BSS8402DW
Document number: DS30380 Rev. 13 - 2 3 of 7
www.diodes.com September 2011
© Diodes Incorporated
BSS8402DW
NEW PRODUCT
Electrical Characteristics N-CHANNEL – Q1, 2N7002 Section @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 60 70 V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°C IDSS 1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(th) 1.0 2.5 V VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance @ TJ = 25°C
@ TJ = 125°C RDS (ON) 3.2
4.4 7.5
13.5 Ω VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current ID(ON) 0.5 1.0 A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 22 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 11 25 pF
Reverse Transfer Capacitance Crss 2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 7.0 20 ns VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V, RGEN = 25Ω
Turn-Off Delay Time tD(OFF) 11 20 ns
Electrical Characteristics P-CHANNEL – Q2, BSS84 Section @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -50 V VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS
-15
-60
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = 25°C
VDS = -50V, VGS = 0V, TJ = 125°C
VDS = -25V, VGS = 0V, TJ = 25°C
Gate-Body Leakage IGSS ±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
-0.8 -2.0 V VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS
(
ON
)
10 Ω VGS = -5V, ID = -0.100A
Forward Transconductance gFS .05 S VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 45 pF VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 25 pF
Reverse Transfer Capacitance Crss 12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD
(
ON
)
10 ns VDD = -30V, ID = -0.27A,
RGEN = 50Ω, VGS = -10V
Turn-Off Delay Time tD
(
OFF
)
18 ns
Notes: 6. Short duration pulse test used to minimize self-heating effect.
BSS8402DW
Document number: DS30380 Rev. 13 - 2 4 of 7
www.diodes.com September 2011
© Diodes Incorporated
BSS8402DW
NEW PRODUCT
N-CHANNEL – 2N7002 SECTION
0
0.2
0.4
0.6
0.8
1.0
012345
V , DRAIN-SOURCE VOLTAGE (V)
Fi g. 1 On-R egion Charact e r i s t ics
DS
I , DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
00.2
I , DRAIN CURRENT (A)
Fig . 2 On-R esistance vs . Dr ai n Current
D
T = 25C
j
°
6
7
0.4 0.6 0.8 1.0
R , STATIC DRAIN- S OURCE
ON-RESISTANCE ( )
DS(ON)
Ω
1.0
1.5
2.0
2.5
3.0
-55 -30 -5 20 45 70 95 120 145
T, JUNCTION TEMPERA T URE ( C)
Fig. 3 On-Resistance vs. Junction Temperature
j
°
V = 10V,
I = 200mA
GS
D
R , STATIC DRAIN-SOURCE
ON- RESISTANCE ( )
DS(ON)
Ω
0
V , GA T E TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source V oltage
GS
1
2
3
4
5
6
0 2 4 6 81012141618
R , STA TIC DRAIN-SOURCE
ON-RESIST ANCE ( )
DS(ON)
Ω
0
2
1
4
3
00.20.4
0.6 0.8 1
V
G
A
T
E-S
O
U
R
C
E
C
U
R
R
EN
T
(V)
GS,
I , DRAIN CURRENT (A)
Fig. 5 Typical Transfer Characteristics
D
6
5
8
7
10
9
V = 10V
DS
0
50
100
150
200
250
025
50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
d
T , AMBIENT TEMPERA TURE ( C)
Fig. 6 Max Power Dissipation vs. Ambient Temperature
A
°
BSS8402DW
Document number: DS30380 Rev. 13 - 2 5 of 7
www.diodes.com September 2011
© Diodes Incorporated
BSS8402DW
NEW PRODUCT
P-CHANNEL – BSS84 SECTION
0
-600
-500
-400
-300
-200
-100
0-2-1 -5-4-3
I, D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(mA)
D
V , DRAIN-SOURCE (V)
Fig. 7 Drain-Source Current vs. Drain-Source Voltage
DS
T = 25C
A
°
-0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0-2-3-4-1 -8-7
-6
-5
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V , GA T E-TO-SOURCE VOLTAGE (V)
Fig. 8 Drain Current vs. Gate-Source Voltage
GS
0
1
2
4
5
3
6
8
7
10
9
0-1-2-3 -4 -5
V , GA TE T O SOURCE (V)
Fig . 9 On-Res is tance vs. Gate-Source Volta ge
GS
T= 25C
A
°
T = 125C
A
°
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
0
3
6
9
12
15
-50 -25 025 50 12510075 150
T , JUNCTION TEMPERATURE (°C)
Fig. 10 On-Resistance vs. Junction Temperature
J
V = -10V
I = -0.13A
GS
D
R , ON-RESIST A NCE ( )
DS
Ω
0.0
5.0
10.0
-0.0 -0.2 -0.4 -0.6 -0.8 1.0
I , DRAIN CURRENT (A)
Fig. 11 On - Resist ance vs . Dr ain Cur r ent
D
15.0
20.0
25.0
V = -8V
GS
V = -10V
GS
V = -3V
GS
V = -3.5V
GS
V = -4V
GS
V = -6V
GS
V = -5V
GS
R
,
O
N-
R
ESIS
T
AN
C
E ( )
DS
Ω
BSS8402DW
Document number: DS30380 Rev. 13 - 2 6 of 7
www.diodes.com September 2011
© Diodes Incorporated
BSS8402DW
NEW PRODUCT
Package Outline Dimensions
Suggested Pad Layout
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22
α 0° 8°
All Dimensions in mm
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C 1.9
E 0.65
A
M
JL
D
B C
H
K
F
X
Z
Y
C
EE
G
BSS8402DW
Document number: DS30380 Rev. 13 - 2 7 of 7
www.diodes.com September 2011
© Diodes Incorporated
BSS8402DW
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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