BSS8402DWQ-13 - DIODES Incorporated

BSS8402DW

Document number: DS30380 Rev. 19 - 2

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BSS8402DW

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

Device V(BR)DSS R

DS(on) max ID

T

A

= 25°C

Q1 60V

13.5 @ VGS = 10V 115mA

Q2 -50V

10 @ VGS = -5V -130mA

Description

This MOSFET has been designed to minimize the on-state resistance

(RDS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

 General Purpose Interfacing Switch

 Power Management Functions

 Analog Switch

Features and Benefits

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Complementary Pair

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT363

 Case Material: Molded Plastic. “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.006 grams (approximate)

Ordering Information (Note 3)

Part Number Compliance Case Packaging

BSS8402DW-7-F Standard SOT363 3,000/Tape & Reel

BSS8402DW-13-F Standard SOT363 10,000/Tape & Reel

BSS8402DWQ-7 Automotive SOT363 3,000/Tape & Reel

BSS8402DWQ-13 Automotive SOT363 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016

Code P R S T U V W X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT363

Top View Top View

Internal Schematic

S

2

D

2

Q

1

Q

2

D

1

S

1

G

2

G

1

KNP = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: R = 2004)

M = Month (ex: 9 = September)

KNP

YM

e3

BSS8402DW

Document number: DS30380 Rev. 19 - 2

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BSS8402DW

Maximum Ratings – Total Device (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Power Dissipation (Note 5) PD 200 mW

Thermal Resistance, Junction to Ambient RθJA 625 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Maximum Ratings N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage VDSS 60 V

Drain-Gate Voltage RGS  1.0M V

DGR 60 V

Gate-Source Voltage Continuous

Pulsed VGSS ±20

±40 V

Drain Current (Note 5) Continuous

Continuous @ +100°C

Pulsed

ID

115

73

800

mA

Maximum Ratings P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage VDSS -50 V

Drain-Gate Voltage RGS  20K V

DGR -50 V

Gate-Source Voltage Continuous VGSS 20 V

Drain Current (Note 5) Continuous ID -130 mA

Note: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,

which can be found on our website at http://www.diodes.com.

BSS8402DW

Document number: DS30380 Rev. 19 - 2

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BSS8402DW

Electrical Characteristics N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage BVDSS 60 70  V VGS = 0V, ID = 10µA

Zero Gate Voltage Drain Current @ TC = +25°C

@ TC = +125°C IDSS   1.0

500 µA VDS = 60V, VGS = 0V

Gate-Body Leakage IGSS   ±10 nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS

(

th

)

1.0  2.5 V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance @ TJ = +25°C

@ TJ = +125°C RDS(on)  3.2

4.4

7.5

13.5  VGS = 5.0V, ID = 0.05A

VGS = 10V, ID = 0.5A

On-State Drain Current ID

(

on

)

0.5 1.0  A VGS = 10V, VDS = 7.5V

Forward Transconductance gFS 80   mS VDS =10V, ID = 0.2A

DYNAMIC CHARACTERISTICS

Input Capacitance Ciss  22 50 pF

VDS = 25V, VGS = 0V, f = 1.0MHz

Output Capacitance Coss  11 25 pF

Reverse Transfer Capacitance Crss  2.0 5.0 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time tD

(

on

)

 7.0 20 ns

VDD = 30V, ID = 0.2A,

RL = 150, VGEN = 10V, RGEN = 25Turn-Off Delay Time tD

(

off

)

 11 20 ns

Electrical Characteristics P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage BVDSS -50   V VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current IDSS







-1

-2

-100

µA

nA

VDS = -50V, VGS = 0V, TJ = 25C

VDS = -50V, VGS = 0V, TJ = 125C

VDS = -25V, VGS = 0V, TJ = 25C

Gate-Body Leakage IGSS   10 nA VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS

(

th

)

-0.8  -2.0 V

VDS = VGS, ID = -1mA

Static Drain-Source On-Resistance RDS

(

on

)

  10  V

GS = -5V, ID = -0.100A

Forward Transconductance gFS .05   S VDS = -25V, ID = -0.1A

DYNAMIC CHARACTERISTICS

Input Capacitance Ciss   45 pF

VDS = -25V, VGS = 0V, f = 1.0MHz

Output Capacitance Coss   25 pF

Reverse Transfer Capacitance Crss   12 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time tD

(

on

)

 10  ns VDD = -30V, ID = -0.27A,

RGEN = 50, VGS = -10V Turn-Off Delay Time tD

(

off

)

 18  ns

Note: 6. Short duration pulse test used to minimize self-heating effect.

BSS8402DW

Document number: DS30380 Rev. 19 - 2

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BSS8402DW

N-CHANNEL – 2N7002 Section

0

0.2

0.4

0.6

0.8

1.0

01 2345

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 On-Region Characteristics

DS

I , DRAIN-SOURCE CURRENT (A)

D

0

1

2

3

4

5

00.2

I , DRAIN CURRENT (A)

Figure 2 On-Resistance vs. Drain Current

D

T = 25 C

j

°

6

7

0.4 0.6 0.8 1.0

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



1.0

1.5

2.0

2.5

3.0

-55 -30 -5 20 45 70 95 120 145

T , JUNCTION TEMPERATURE ( C)

Figure 3 On-Resistance vs. Junction Temperature

J

°

V = 10V,

I

GS

D

= 200mA

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



0

V , GATE TO SOURCE VOLTAGE (V)

Figure 4 On-Resistance vs. Gate-Source Voltage

GS

1

2

3

4

5

6

024681012141618

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



0

2

1

4

3

00.20.4

0.6 0.8 1

V

G

A

T

E-S

O

U

R

C

E

C

U

R

EN

T

(V)

GS,

I , DRAIN CURRENT (A)

Figure 5 Typical Transfer Characteristics

D

6

5

8

7

10

9

V = 10V

DS

0

50

100

150

200

250

025

50 75 100 125 150 175 200

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N (mW)

D

T , AMBIENT TEMPERATURE ( C)

Figure 6 Max Power Dissipation vs. Ambient Temperature

A

°

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Document number: DS30380 Rev. 19 - 2

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BSS8402DW

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 7 Typical Drain-Source Leakage Current vs. Voltage

I, D

R

AIN LEAKA

G

E

C

U

R

EN

T

(nA)

DSS

1000

5 1015202530354045505560

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

100

10

1

P-CHANNEL – BSS84 Section

0

-600

-500

-400

-300

-200

-100

0-2-1 -5-4-3

I, D

R

AI

N

-S

O

U

R

C

E

C

U

R

E

N

T

(mA)

D

V , DRAIN-SOURCE (V)

DS

Figure 8 Drain-Source Current vs. Drain-Source Voltage

T = 25C

A

°

-0.0

-1.0

-0.8

-0.6

-0.4

-0.2

0-2-3-4-1 -8-7

-6

-5

I, D

R

AI

N

C

U

R

E

N

T

(A)

D

V , GATE-TO-SOURCE VOLTAGE (V)

GS

Figure 9 Drain Current vs. Gate-Source Voltage

0

1

2

4

5

3

6

8

7

10

9

0-1-2-3 -4 -5

V , GATE TO SOURCE (V)

Figure 10 On-Resistance vs. Gate-Source Voltage

GS

T= 25C

A

°

T = 125C

A

°

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



0

3

6

9

12

15

-50 -25 025 50 12510075 150

T , JUNCTION TEMPERATURE (°C)

Figure 11 On-Resistance vs. Junction Temperature

J

V = -10V

I = -0.13A

GS

D

R , ON-RESISTANCE ( )

DS



BSS8402DW

Document number: DS30380 Rev. 19 - 2

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BSS8402DW

0.0

5.0

10.0

-0.0 -0.2 -0.4 -0.6 -0.8 1.0

I , DRAIN CURRENT (A)

Figure 12 On-Resistance vs. Drain Current

D

15.0

20.0

25.0

V = -8V

GS

V = -10V

GS

V = -3V

GS

V = -3.5V

GS

V = -4V

GS

V = -6V

GS

V = -5V

GS

R

,

O

N-

R

ESIS

T

AN

C

E ( )

DS



-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 13 Typical Drain-Source Leakage Current vs. Voltage

-I , D

R

AIN LEAKA

G

E

C

U

R

EN

T

(nA)

DSS

1000

5 101520253035404550

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

100

10

1

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT363

Dim Min Max Typ

A 0.10 0.30 0.25

B 1.15 1.35 1.30

C 2.00 2.20 2.10

D 0.65 Typ

F 0.40 0.45 0.425

H 1.80 2.20 2.15

J 0 0.10 0.05

K 0.90 1.00 1.00

L 0.25 0.40 0.30

M 0.10 0.22 0.11

 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.5

G 1.3

X 0.42

Y 0.6

C1 1.9

C2 0.65

A

M

JL

D

B C

H

K

F

X

Z

Y

C1

C2

G

BSS8402DW

Document number: DS30380 Rev. 19 - 2

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BSS8402DW

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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