BSS8402DW
Document number: DS30380 Rev. 18 - 2 1 of 7
www.diodes.com July 2012
© Diodes Incorporated
BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Qualification Case Packaging
BSS8402DW-7-F Commercial SOT363 3,000/Tape & Reel
BSS8402DW-13-F Commercial SOT363 10,000/Tape & Reel
BSS8402DWQ-7 Automotive SOT363 3,000/Tape & Reel
BSS8402DWQ-13 Automotive SOT363 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016
Code P R S T U V W X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
e3
SOT363
Top View Top View
Internal Schematic
S
2
D
2
Q
1
Q
2
D
1
S
1
G
2
G
1
KNP = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: R = 2004)
M = Month (ex: 9 = September)
KNP
YM
BSS8402DW
Document number: DS30380 Rev. 18 - 2 2 of 7
www.diodes.com July 2012
© Diodes Incorporated
BSS8402DW
Maximum Ratings – Total Device (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Power Dissipation (Note 5) PD 200 mW
Thermal Resistance, Junction to Ambient R
θ
JA 625 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Maximum Ratings N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS ≤ 1.0MΩ V
DGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 5) Continuous
Continuous @ 100°C
Pulsed ID 115
73
800 mA
Maximum Ratings P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage RGS ≤ 20KΩ V
DGR -50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 5) Continuous ID -130 mA
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.
BSS8402DW
Document number: DS30380 Rev. 18 - 2 3 of 7
www.diodes.com July 2012
© Diodes Incorporated
BSS8402DW
Electrical Characteristics N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current @ TC = +25°C
@ TC = +125°C IDSS ⎯ ⎯ 1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
1.0 ⎯ 2.5 V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance @ TJ = +25°C
@ TJ = +125°C RDS(on) ⎯ 3.2
4.4 7.5
13.5 Ω VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current ID
(
on
)
0.5 1.0 ⎯ A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 ⎯ ⎯ mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 22 50 pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss ⎯ 11 25 pF
Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD
(
on
)
⎯ 7.0 20 ns
VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V, RGEN = 25ΩTurn-Off Delay Time tD
(
off
)
⎯ 11 20 ns
Electrical Characteristics P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -50 ⎯ ⎯ V VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS ⎯
⎯
⎯
⎯
⎯
⎯
-15
-60
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = 25°C
VDS = -50V, VGS = 0V, TJ = 125°C
VDS = -25V, VGS = 0V, TJ = 25°C
Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
-0.8 ⎯ -2.0 V VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS
(
on
)
⎯ ⎯ 10 Ω V
GS = -5V, ID = -0.100A
Forward Transconductance gFS .05 ⎯ ⎯ S VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ ⎯ 45 pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss ⎯ ⎯ 25 pF
Reverse Transfer Capacitance Crss ⎯ ⎯ 12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD
(
on
)
⎯ 10 ⎯ ns VDD = -30V, ID = -0.27A,
RGEN = 50Ω, VGS = -10V Turn-Off Delay Time tD
(
off
)
⎯ 18 ⎯ ns
Notes: 6. Short duration pulse test used to minimize self-heating effect.
BSS8402DW
Document number: DS30380 Rev. 18 - 2 4 of 7
www.diodes.com July 2012
© Diodes Incorporated
BSS8402DW
N-CHANNEL – 2N7002 Section
0
0.2
0.4
0.6
0.8
1.0
012345
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 On-Region Characteristics
DS
I , DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
00.2
I , DRAIN CURRENT (A)
Figure 2 On-Resistance vs. Drain Current
D
T = 25 C
j
°
6
7
0.4 0.6 0.8 1.0
R , STATIC DRAIN-S OURCE
ON-RESISTANCE ( )
DS(ON)
Ω
1.0
1.5
2.0
2.5
3.0
-55 -30 -5 20 45 70 95 120 145
T , JUNCTION TEMPERA T URE ( C)
Figure 3 On-Resistance vs. Junction Temperature
J
°
V = 10V,
I
GS
D
= 200mA
R , STATIC DRAIN-SOURCE
ON- RESI S TANCE ( )
DS(ON)
Ω
0
V , GATE TO SOURCE VOLTAGE (V)
Figure 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
024681012141618
R , STA TIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
0
2
1
4
3
00.20.4
0.6 0.8 1
V
G
A
T
E-S
O
U
R
C
E
C
U
R
R
EN
T
(V)
GS,
I , DRAIN CURRENT (A)
Figure 5 Typical Transfer Characteristics
D
6
5
8
7
10
9
V = 10V
DS
0
50
100
150
200
250
025
50 75 100 125 150 175 200
,
WE
DISSI
A
I
N (mW)
D
T , AMBIENT TEMPERA TURE ( C)
Figure 6 Max Power Dissipation vs. Ambient Temperature
A
°
BSS8402DW
Document number: DS30380 Rev. 18 - 2 5 of 7
www.diodes.com July 2012
© Diodes Incorporated
BSS8402DW
V , DRAIN-SOURCE VOLT AGE (V)
DS
Fig ur e 7 Typical Dr ai n- Sour ce Leak age Curre nt v s. Voltage
I, D
R
AIN LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
1000
5 1015202530354045505560
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
100
10
1
P-CHANNEL – BSS84 Section
0
-600
-500
-400
-300
-200
-100
0-2-1 -5-4-3
I, D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(mA)
D
V , DRAIN-SOURCE (V)
DS
Fi gur e 8 Drain- Sou r ce Cu r r ent vs. D r ain- Sour ce Voltage
T = 25C
A
°
-0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0-2-3-4-1 -8-7
-6
-5
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V , GATE-TO-SOURCE VOLTAGE (V)
GS
Figure 9 Drain Current vs. Gate-Source Voltage
0
1
2
4
5
3
6
8
7
10
9
0-1-2-3 -4 -5
V , GATE TO SOURCE (V)
Figure 10 On-Resistance vs. Gate-Source Voltage
GS
T= 25C
A
°
T = 125C
A
°
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
0
3
6
9
12
15
-50 -25 025 50 12510075 150
T , JUNCTION TEMPERATURE (°C)
Fig ur e 11 On - Re sistance vs. Junct ion Temperature
J
V = -10V
I = -0.13A
GS
D
R , ON-RESISTANCE ( )
DS
Ω
BSS8402DW
Document number: DS30380 Rev. 18 - 2 6 of 7
www.diodes.com July 2012
© Diodes Incorporated
BSS8402DW
0.0
5.0
10.0
-0.0 -0.2 -0.4 -0.6 -0.8 1.0
I , DRAIN CURRENT (A)
Figure 12 On-Resistance vs. Drain Current
D
15.0
20.0
25.0
V = -8V
GS
V = -10V
GS
V = -3V
GS
V = -3.5V
GS
V = -4V
GS
V = -6V
GS
V = -5V
GS
,
N-
ESIS
AN
E ( )
DS
Ω
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 13 Typical Drain-Source Leakage Current vs. Voltage
-I , D
AIN LEAKA
E
EN
(nA )
DSS
1000
5 101520253035404550
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
100
10
1
Package Outline Dimensions
Suggested Pad Layout
SOT363
Dim Min Max Typ
A 0.10 0.30 0.25
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D 0.65 Typ
F 0.40 0.45 0.425
H 1.80 2.20 2.15
J 0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.22 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
A
M
JL
D
B C
H
K
F
X
Z
Y
C1
C2
C2
G
BSS8402DW
Document number: DS30380 Rev. 18 - 2 7 of 7
www.diodes.com July 2012
© Diodes Incorporated
BSS8402DW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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failure of the life support device or to affect its safety or effectiveness.
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