Did you mean: FS30VS-3-T1
Product Datasheet Search Results:
4 Pages, 192 KB, Scan- FS30VS-3-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 30 A, 150 V, 0.092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S
4 Pages, 192 KB, Scan- FS30VS-3-T2
- Mitsubishi Electric & Electronics Usa, Inc.
- 30 A, 150 V, 0.092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S
4 Pages, 188 KB, Scan- FS50VS-3-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 50 A, 150 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S
4 Pages, 188 KB, Scan- FS50VS-3-T2
- Mitsubishi Electric & Electronics Usa, Inc.
- 50 A, 150 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S
Product Details Search Results:
Mitsubishichips.com/FS30VS-3-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0920 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"150 V","Transistor Application":"SWITCHING","Surf...
1511 Bytes - 13:49:53, 26 November 2024
Mitsubishichips.com/FS30VS-3-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0920 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"150 V","Transistor Application":"SWITCHING","Surf...
1509 Bytes - 13:49:53, 26 November 2024
Mitsubishichips.com/FS50VS-3-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0310 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"150 V","Transistor Application":"SWITCHING","Surf...
1512 Bytes - 13:49:53, 26 November 2024
Mitsubishichips.com/FS50VS-3-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0310 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"150 V","Transistor Application":"SWITCHING","Surf...
1511 Bytes - 13:49:53, 26 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| VS-3-1_8_VOS-3-1_8.pdf | 1.49 | 1 | Request | |
| VS-3-1_8.pdf | 1.49 | 1 | Request | |
| SVS-3-1_8.pdf | 0.72 | 1 | Request | |
| SVS-3-1_8-SA.pdf | 0.72 | 1 | Request | |
| FVS-3-1_8_VOLLST..pdf | 1.49 | 1 | Request | |
| FVS-3-1_8.pdf | 1.49 | 1 | Request |
