MITSUBISHI Nch POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE FS50VS-3 OUTLINE DRAWING Dimensions in mm @ 10.5MAX. . fern >< << 5 ws 7 OD 71 a 89 aiSi# 3 /g\0 a , * on a ves boos pt W GATE 10V DRIVE GATE @VDSS cece creer e cence eee eee eet tenet eees 150V @ SOURCE @ DRAIN @ IDS (ON) (MAX) cers eters t eter cette cent cent eaes 31mQ @[D ccec ccc cceceececeeeseeeneeseeeseatenegeeseeseas 5OA oa Integrated Fast Recovery Diode (TYP.) --:-: 130ns 10-2208 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (tc = 25C) Symbol Parameter Conditions Ratings Unit Voss Drain-source voltage Vas = 0V 150 Vv Vass Gate-source voltage Vos = OV +20 Vv Ip Drain eurrent 50 A Jom Drain current (Pulsed) 200 A IDA Avalanche drain current (Pulsed) | L = 100unH 50 A Is Source current 50 A isM Source current (Pulsed) 200 A Po Maximum power dissipation : 125 Ww Teh Channel temperature ~55 ~ +150 C Tstg Storage temperature ~55 ~ +150 C Weight Typical value 1.2 9 2 1050 MITSUBISHI ELECTRIC MITSUBISHI Nch POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tech = 25C) Limits Symbol Parameter Test conditions it Min. Typ. Max. Uni V (8A) DSS | Drain-source breakdown voltage | 1D = 1mA, VDs = OV 150 _ Vv lass Gate leakage current Vas = +20V, Vos = 0V _ _ +0.1 HA loss Drain current VDS = 150V, VGS = OV _ 0.1 mA VGS (th) Gate-source threshold voltage iD = mA, VDS = 10V 2.0 3.0 4.0 Vv DS (ON) | Drain-source on-state resistance | ID = 25A, VGS = 10V _ 24 31 mQ VDS (ON) | Drain-source on-state voltage | ID = 25A, Ves = 10V 0.600 0.775 Vv Lyis| Forward transfer admittance _| lo = 25A, Vos = 10V a 55 _ 5s Ciss Input capacitance ~~ 6540 _ pF Coss Output capacitance Vos = 10V, Vas = OV, f = 1MHz _ 860 _ pF Crss Reverse transfer capacitance os 360 _ pF td (on) Turn-on delay time ~ 95 _ ns tr Rise time _ 155 ~ ns ~ Vbp = BOV, ID = 25A, VG@s = 10V, RGEN = Res = 502 td (off) Tum-off delay time _ 380 _ ns tf Fail time _ 180 _ ns Vsp Source-drain voltage IS = 25A, VGS = OV _ 1.0 1.5 Vv Rin ch-c) | Thermal resistance Channel to case _ 1.0 CNN tr Reverse recovery time Is = 50A, dis/dt = -100A/is _ 130 ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 3 2 = 102 a 160 = 7 a 2 5 z 3 Q 120 z 2 i = 101 oO = 7 80 oS a z 2 ia < 2 = 40 a 0 5 10 a z To = 25C Pulse % 50 100 150 200 Joo 23 57101 29 57102 23 57103 CASE TEMPERATURE Tc (C) DRAIN-SOURGE VOLTAGE Vos () OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) Vas = 20V 10V 8V 10V _7V 400 50 To = 25C 6V Pulse Test Vas = 20V < 80 < 40 2 2 To = 25C bE 5 60 ~ | Pulse Test =z 30 ud x iu x oc . x a 40 tw B 20 Z = z < ~ < = a9 Po = 125W & 10 4v 0 0 9 1.0 2.0 3.0 40 5.0 Q 0.4 0.8 1.6 2.0 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vos (V) 2 - 1087 oe MITSUBISHI ELECTRIC MITSUBISHI Nch POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS. GATE-SQURCE VOLTAGE DRAIN CURRENT (TYPICAL) (TYPICAL) OrSTaerc Puise Test Be Eg EE ce Ne oz zs 2 ws 3 Vos = 10V Sy Sy ; 09 az 20V aS Ht Ze 2% r> 8 5 ac To = 25C Pulse Test 0 0 4 8 12 16 20 3 57109 23 57101 23 57102 23 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT io (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 102 To = 25C 7 Vos = 10V Vos = 2.0V Puise Test = Test 5 < ce 4 3 uw 863 = Be 2 ~ 2 5 < ie e 6 101 ia az 3 ct 7 3 <E z SE 5 < cz 4 & 22 3 2 0 10 0 4 8 12 16 20 400 2 345 7101 2 345 7 102 GATE-SOURCE VOLTAGE Ves (V} DRAIN CURRENT Ip (A} CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 2 103 108 ~ > @ 3 a 3 a og 2 yw 2 <5 103 = 5g g 102 <8 = 7 2o 3 5 Sg 2 E 3 102 = 3 To = 25C z Teh = 25C 2 Vob = 80V f= 1MHz Ves = 10V 3} vss =0v 40" RGEN = Ras = 500 23 57100 23 57101293 57102 23 100 2345 710! 2 345 7102 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN CURRENT Ib (A) 2 - 1052 F_ MITSUBISHI A ELECTRIC DRAIN-SOURCE ON-STATE RESISTANCE rps (ON) (1C) DRAIN-SOURCE BREAKDOWN VOLTAGE _ V (8R) pss (C) GATE-SOURCE VOLTAGE Vas (V) DRAIN-SOURCE ON-STATE RESISTANCE rps (on) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (8A) 08s (25C) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 0 Teo = 26C lo = 50A 16 12 9 40 80 120 160 =. 200 = 2 pm Aaa N _ Q oO Ny woAnNN 10-1 0.4 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. (TYPICAL) Vas = 10V to = 1/2lo Pulse Test 50 0 50 100 = 150 CHANNEL TEMPERATURE Tch C} BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 0V ID=1mA ~-50 0 50 100 = 150 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE = 2th (ch-c) CC/W) 101 7 Dd 10 705 5 SOURCE CURRENT Is (A) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 5 3 2 02 2To.1 10-1 7 5 3 2 MITSUBISHI Nch POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100 ' Ves = OV Pulse Test i 80 | Te = 125C 60 40 20 a) 0.4 0.8 12 16 2.0 SOURCE-DRAIN VOLTAGE Vso (V} THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VDs = 10V io=tmA 4.0 3.0 2.0 1.0 0 ~50 0 50 100 = 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS =1.0 0.05 0.02 01 Pulse 2 10423 5710-323 5710223 5710-123 571023 5710! 23 57102 PULSE WIDTH tw (s) MITSUBISHI 2 - 1053 ELECTRIC