MITSUBISHI Nch POWER MOSFET FS30VS-3 HIGH-SPEED SWITCHING USE FS30VS-3 OUTLINE DRAWING Dimensions in mm &O.SMAX, 45 pay \ 4) oe 2 Sita @VDSS cece tre cree eta eter reece cement teens 150V i Bran rbs (ON) (MAX) eae ee emer t aetna eee enes 92m DY ccc reece teen e cee e renee renee eetvenese 30A Integrated Fast Recovery Diode (TYP.) ----- 110ns TO-2208 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (Te = 25C) Parameter Conditions Voss Drain-source Vass Gate-source +20 Ib Orain current 30 1om Drain foa Avaianche drain current 30 Is Source current 30 ISM Source current 120 Po Maximum 70 Toh ~55 ~ +150 T ~55 ~ +150 1.2 ; MITSUBISHI a= 1098 ELECTRICELECTRICAL CHARACTERISTICS (Tech = 25C) MITSUBISHI Nch POWER MOSFET FS30VS-3 HIGH-SPEED SWITCHING USE Symbol Parameter Test conditions - Limits Unit Min. Typ. Max. V (BR) DSS | Drain-source breakdown voltage | iD = 1mA, Vos = OV 150 _ _ Vv lass Gate leakage current VGS = +20V, VDS = OV _ _ +0.1 uA ipss Drain current Vns = 150V, Vas = 0V ~ _ 0.1 mA VGS (th) | Gate-source threshold voltage ID = 1mA, Vos = 10V 2.0 3.0 4.0 Vv TDS {ON) | Drain-source on-state resistance | [D = 15A, Vas = 10V 68 92 ma Vp8 (ON) | Drain-source on-state voitage | lo = 15A, Vas = 10V ~~ 1.02 1.38 Vv Lyis | Forward transfer admittance | Ip = 15A, VbS = 10V ~ 29 Ss Ciss input capacitance _ 2300 pF Coss Output capacitance Vbs = 10V, Vas = OV, f= {MHz _ 320 _ pF Crss Reverse transfer capacitance _ 130 _ pF td (on) Turn-on delay time _ 35 _ ns te Rise time Vpp = 80V, ID = 15A, Vas = 10V, RGEN = Res = 500 = 58 = ns ta (off) Turn-off delay time _ 110 _ ns tf Fall time _ 65 _ ns Vsp Source-drain voltage Is = 15A, Vas = OV _ 4.0 1.5 Vv Rth (ch-c)_ | Therma! resistance Channel to case _ _ 1.78 <t/W tre Reverse recovery time is = 30A, dis/dt = -100A/us _ 110 ~ ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 100 3 2 To = 25C = 02 Pulse 2 1 o 80 <= 7 a 3 5 z 3 60 5 2 ke wi c cf 101 a oe 7 YH 40 ee) e z 3 wi e ? = 20 A 499 40ms 2 7 100ms 5 be oF 50 100 150 200 33 57101 23 57102 23 5710 23 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) Vas = 20V 10V 10V 7V 50 20 BV Te = 26C Pulse Test Vas = 20V z< 40 =< 16 2 a & 30 5 12 i i a oc s 3 20 ~ 5 8 < =~ Z < BV sf : fn a 10 Oo 4 To = 26C Pulse Test av % 1 2 3 4 5 ft) 0.4 0.8 1.2 16 2.0 DRAIN-SOURCE VOLTAGE Vps (V) DRAIN-SOURCE VOLTAGE Vos (V) 2 - 1035 MITSUBISHI ELECTRICMITSUBISHI Nch POWER MOSFET FS30VS-3 HIGH-SPEED SWITCHING USE DRAIN-SOURCE ON-STATE VOLTAGE Vbs (oN) (V) DRAIN CURRENT Ib (A) CAPACITANCE Ciss, Coss, Crss (pF} ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5 To = 25C Pulse Test wp q 4 Ze 5 = 3 ~ 12 = SOA z 5 a we O Sy 2 dz os 20 tn 1 od 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) Te = 26C Vos = 10V Pulse Test ee WS og 2a z Ww kK ez < SE es ee 0 4 8 12 16 20 GATE-SOURCE VOLTAGE Vas (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 3 & 2 OF 103 2 Z o 5 zZ 3 xz 2 8 102 3 z Vos = 10V f= 1MHz 3h ves = ov 3 57100 23 57101 23 5710? 23 DRAIN-SOURCE VOLTAGE Vos (Vv) 100 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) To = 25C Pulse Test 80 Vas = 10V 60 20V 40 20 0 3 57109 23 57101 23 57102 23 DRAIN CURRENT Io (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) _ Q O Vos = 10V Pulse Test mp wp! Te = 25C 75C | 125C = 2 N O fo NSN 100 20345 7101 2 345 7102 DRAIN CURRENT Ip (A) SWITCHING CHARACTERISTICS (TYPICAL) 3 To = 25C Vop = BOV 3 Vas = 10V 3 Raen = Res = 50 2 102 7 5 4 3 2 101 109 2 345 710' 2 345 7102 DRAIN CURRENT Io (A) 2 ~ 1036 q MITSUBISH ELECTRICDRAIN-SOURCE ON-STATE RESISTANCE ros (any (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE _V er) pss (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (8A) oss (25C) GATE-SOURCE VOLTAGE Vas (V) DRAIN-SOURCE ON-STATE RESISTANCE 10S (ON) (25C) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 0 Te = 26C Ib = 30A 16 12 0 20 _ 2 Ny Oso wW _ Q o No oa sON 10-1 0.4 Vos = 50V 40 60 86 100 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 10V ID = 1/2ID Pulse Test -50 0 50 100 8=6150 CHANNEL TEMPERATURE Tch (C) BREAKOOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 0V ip = imA ~50 0 50 100 =6150 CHANNEL TEMPERATURE Teh (C) TRANSIENT THERMAL IMPEDANCE | Zth tch-c) (C/W) 10-. 10 MITSUBISHI Nch POWER MOSFET FS30VS-3 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50 Vas = OV Pulse Test = 40 2 E To = 125C 5 30 c 3 20 hid 5 10 a 0 0 04 08 42 16 20 SOURCE-DRAIN VOLTAGE Vso (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 Vos = 10V q Io = imA o~ 40 is Ox We a = 8 3.0 6 Lud 2 g 20 - ub > & 1.0 S 0 ~50 0 50 100 = 150 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS "L % % 3 01 1 0.05 7 0.02 5 0.01 3 Single Pulse 2 10423 5710-323 5710729 5710-123 5710 23 5710123 57102 PULSE WIDTH. tw (s) MITSUBISHI ELECTRIC 2 ~ 1037