Product Datasheet Search Results:
13 Pages, 535 KB, Original- NDS0610D87Z
- Fairchild Semiconductor Corporation
- 120 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
4 Pages, 100 KB, Original- NDS0610_G
- Fairchild Semiconductor
- NDS0610_G
5 Pages, 111 KB, Scan- NDS0610L99Z
- Fairchild Semiconductor Corporation
- 120 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
5 Pages, 139 KB, Original- NDS0610_NL
- Fairchild Semiconductor
- P-Channel Enhancement Mode Field Effect Transistor
7 Pages, 372 KB, Original- NDS0610
- National Semiconductor
- P-Channel Enhancement Mode Field Effect Transistor
5 Pages, 454 KB, Original- NDS0610
- On Semiconductor
- Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 T/R
Product Details Search Results:
Fairchildsemi.com/NDS0610
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3.5V @ 1mA","Package / Case":"TO-236-3, SC-59, SOT-23-3","Gate Charge (Qg) @ Vgs":"2.5nC @ 10V","Product Photos":"SOT-23-3","PCN Assembly/Origin":"SOT23 Manufacturing Source 31/May2013","PCN Design/Specification":"Mold Compound 12/Dec/2007","Product Training Modules":"High Voltage Switches for Power Processing SMPS Power Switch","Rds On (Max) @ Id, Vgs":"10 Ohm @ 500mA, 10V","Datasheets":"NDS0610 Molded Pkg,...
2130 Bytes - 02:09:21, 09 November 2024
Fairchildsemi.com/NDS0610D87Z
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V",...
1489 Bytes - 02:09:21, 09 November 2024
Fairchildsemi.com/NDS0610_G
728 Bytes - 02:09:21, 09 November 2024
Fairchildsemi.com/NDS0610L99Z
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHIN...
1497 Bytes - 02:09:21, 09 November 2024
Onsemi.com/NDS0610
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.36(W)","Continuous Drain Current":"0.12(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1457 Bytes - 02:09:21, 09 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| EYGS0610ZLAH.pdf | 0.52 | 1 | Request | |
| US2:TPS3S0610X0.pdf | 0.35 | 1 | Request | |
| US2:TPS3S061000.pdf | 0.35 | 1 | Request | |
| US2:TPS3S0610X02.pdf | 0.35 | 1 | Request | |
| 7BWS061005.pdf | 0.04 | 1 | Request | |
| 3HS0610_01.pdf | 0.07 | 1 | Request |
