a FAIRCHILD yap eee rene SEMICONDUCTOR m NDF0O610 / NDSO610 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch. Features -0.18 and -0.12A, -60V. R Voltage controlled p-channel small signal switch = 102 pstony = High density cell design for low Ragin, TO-92 and SOT-23 packages for both through hole and surface mount applications High saturation current April 1995 s G wo TO-92 D NDFO610 aor, G Absolute Maximum Ratings T, = 25C unless otherwise noted Symbol | Parameter NDFO0610 NDS0O610 Units Vose Drain-Source Voltage -60 Vv Vous Drain-Gate Voltage (R,, < 1 MQ) -60 Vv Voss Gate-Source Voltage - Continuous 420 V - Nonrepetitive (t,< 50 ps) 480 V b Drain Current - Continuous -0.18 0.12 A - Pulsed -1 Py Maximum Power Dissipation T, = 25C 08 0.36 W Derate above 25C 5 2.9 mWPC Ty Tere Operating and Storage Temperature Range -55 to 150 Cc T, Maximum lead temperature for soldering purposes, 300 C 1/16" from case for 10 seconds THERMAL CHARACTERISTICS Rasa Thennal Resistance, Junction-to-Ambient 200 350 CAN 1998 Fairchild Semiconductor Corporation NDS0610 SAMELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted) Symbol | Parameter Conditions | Min | Typ | Max | Units OFF CHARACTERISTICS BV ne5 Drain-Source Breakdown Voltage Veg = OV, I= -10 pA -60 V Ines Zero Gate Voltage Drain Current Vong = 4B VV Qg= OV -1 pA | T, =125 200 | yA lager Gate - Body Leakage, Forward Ves = 20 V, Vag = OV 10 nA lager Gate - Body Leakage, Reverse Vos = -20 V, Vp5= OV -10 nA ON CHARACTERISTICS (Note 1} Vissany Gate Threshold Voltage Voc= Ves: |p=-1 mA -1 -2.4 -3.5 Vv | t,=125 | 06 | -21 | -32 Poca Static Drain-Source On-Resistance Vos =-10V, ,=-05A 3.6 10 a | T, =125C 59 | 16 Ves = 4.5 V, |, =-0.25A 52 20 | T, =125 7a | 30 lean On-State Drain Current Vag = 10 V, Vig= -10V -0.6 -1.6 A Vig = ~4.5V, Vag = -10V 0.35 Ors Forward Transconductance Vog= -10Vi1,=-0.1A 70 170 ms DYNAMIC CHARACTERISTICS Ce Input Capacitance Vos = "25 V, Vag = 0 V, 40 60 pF C... Output Capacitance f= 1.0 MHz 11 25 | pF C.. Reverse Transfer Capacitance 3.2 5 pF SWITCHING CHARACTERISTICS (Note 1) bony Turn - On Delay Time Vip = 25V, 1, =-O.18A, 10 ns t Turn - On Rise Time Vag = 10, Rogy = 25 0 15 ns yen Turn - Off Delay Time 13 15 ns t Turn - Off Fall Time 10 20 ns Q, Total Gate Charge Vag = 48 V, 1.43 nc Q,. Gate-Source Charge Ip= O5A, Vag -10V 06 nc QO. Gate-Drain Charge 0.25 nc DRAIN-SOURCE DIODE CHARACTERISTICS I, Maximum Continuous Source Current -0.18 A le Maximum Pulse Source Current (note 1) -1 A Veo Drain-Source Diode Forward Voltage Veg = OV, 1,=-0.5A -1.2 -1.5 Vv we T, =125 093 | -1.3 ty Reverse Recovery Time Vig =9OV,1,=-0.5A, 40 ns dl_/dt = 100 Avs I. Reverse Recovery Current 28 A Note 1 Pulse Test Pulse Width 300 Ws Duty Cycle < 2 0% NDS0610 SAMTypical Electrical Characteristics Rosion) NORMALIZED DRAIN-SOURCE ON-RESISTANCE |p DRAIN CURRENT (A) Ip DRAIN-SOURCE CURRENT tA} Q Q -08 -06 -04 -02 Q 2 4 8 8 10 Vog DRAIN-SOURCE VOLTAGE [(} Figure 1. On-Region Characteristics & |p=-05A 8 Vag = -10 A 4 a 2 a Ln 4 & A Britis tes ii tir tii i tae -50 -25 a 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (%) Figure 3. On-Resistance Variation with Temperature I I 7 | Vg = -10V Ty = 55 of of ra / L / 125 U C 3 5 4B eA v GATE TO SOURCE VOLTAGE () as Figure 5. Transfer Characteristics Ripgion) NORMALIZED DRAIN-SOURCE ON-RESISTANCE Vi, NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE Roston}, NORMALIZED DRAIN-SOQURGE ON-RESISTANGE oO -O2 a4 D6 DS al 12 14 |p. DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Gate Voltage and Drain Current Vas ABV ensees -10V0 Q -02 -04 06 -08 -4 -12 -14 Ip DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Drain Current and Temperature [ Vos = Vas Ip =-1mA Tos 1 095 WN oa P 0 85 oe 50-25 Q 25 50 75 100 125 180 Ty JUNCTION TEMPERATURE (%} Figure 6. Gate Threshold Variation with Temperature NDS0610 SAMTypical Electrical Characteristics (continued) 115 T Ip = OA \ | a wo a BVogs . NORMALIZED DRA IN-SOQURCE BREAKDOWN VOLTAGE () -50 -25 Qo 25 50 75 100 125 150 7 . JUNCTION TEMPERATURE {%G) a Figure 7. Breakdown Voltage Variation with Temperature a os aa ra a ho a CAPACITANGE (pF) a f=1 MHz 3 Vag = OV 2 a1 o2 os 1 2 5 10 -Vpg DRAIN TO SOURCE VOLTAGE (} 20 30 60 Figure 9. Capacitance Characteristics TRANSGCONDUGTANGE (SIEMENS) Vos =-10 des 0 -O2 -04 -06 -08 -1 -12 14 In DRAIN CURRENT (A) Figure 11. Transconductance Variation with Drain Current and Temperature lg REVERSE DRAIN CURRENT tA) Veg GATE-SOURCE VOLTAGE () 15 1 os os O2 o4 a6 oe 1 12 14 16 18 -Vep BODY DIODE FORWARD VOLTAGE () Figure 8. Body Diode Forward Voltage Variation with Current and Temperature -10 Vos = - Z LZ 0 a o2 a4 o6 a@ 1 12 14 16 Qg GATE CHARGE (nC) Figure 10. Gate Charge Characteristics NDS0610 SAMTypical Electrical Characteristics (continued) 0 z z = o5 = O58 5B 2 2 Ww wl fiat oc ii A a Boot Sot z = < oo5 ze Vag = -10 a Vgs = -10V 2 SINGLE PULSE + SINGLE PULSE - Ta = 25C Ta = 25C A Dol A ooi oo005 0 005 1 2 5 10 20 30 60 80 ' p 5 10 20 30 60 &0 - Vos. DRAIN-SOURGE VOLTAGE (} -Vog. DRAIN-SOURGE VOLTAGE [} Figure 12. NDFO610 (TO-92) Figure 13. NDS0610 (SOT-23) Maximum Safe Maximum Safe Operating Area Operating Area Lu ue > 2 - ke wo io Raia (=r Reta IC Be Rela - 200 CA 4 = Uatasheet) aS N Sec az Ww 25 eK 28 Eg Ty-T, =P "Raya tt rc? JoUA aA ngle Pulse z Duly Cycle D=t, A, 0.01 0.0001 0.001 0.01 0.1 1 10 100 300 1. TIME {sec} Figure 14. NDFO610 (TO-92) Transient Thermal Response Curve. 0.5 0.2 Raya hal Raga 0.1 Raja 7350 CAN 0.05 + P(pk) t 44 0.01 sag Ty" Ta =P "Raga Single Pulse rft), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.002 Duty Cycle D=t, Ay 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t,, TIME fsec} Figure 15. NDS0610 (SOT-23) Transient Thermal Response Curve. NDS0610 SAM