ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -10 µA-60 V
IDSS Zero Gate Voltage Drain Current VDS = -48 V, VGS = 0 V -1 µA
TJ = 125°C -200 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 10 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -10 nA
ON CHARACTERISTICS (Note 1)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -1 mA -1 -2.4 -3.5 V
TJ = 125°C -0.6 -2.1 -3.2
RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, ID = -0.5 A 3.6 10 Ω
TJ = 125°C 5.9 16
VGS = -4.5 V, ID = -0.25 A 5.2 20
TJ = 125°C 7.9 30
ID(on) On-State Drain Current VGS = -10 V, VDS = -10 V -0.6 -1.6 A
VGS = -4.5 V, VDS = -10 V -0.35
gFS Forward Transconductance VDS = -10 V, ID = -0.1 A 70 170 mS
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = -25 V, VGS = 0 V,
f = 1.0 MHz 40 60 pF
Coss Output Capacitance 11 25 pF
Crss Reverse Transfer Capacitance 3.2 5 pF
SWITCHING CHARACTERISTICS (Note 1)
tD(on)Turn - On Delay Time VDD = -25 V, ID = -0.18 A,
VGS = -10 V, RGEN = 25 Ω710 nS
trTurn - On Rise Time 515 nS
tD(off)Turn - Off Delay Time 13 15 nS
tfTurn - Off Fall Time 10 20 nS
QgTotal Gate Charge VDS = -48 V,
ID = -0.5 A, VGS = -10 V 1.43 nC
Qgs Gate-Source Charge 0.6 nC
Qgd Gate-Drain Charge 0.25 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
ISMaximum Continuous Source Current -0.18 A
ISM Maximum Pulse Source Current (Note 1) -1 A
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -0.5 A
(Note 1) -1.2 -1.5 V
TJ = 125°C -0.98 -1.3
trr Reverse Recovery Time VGS = 0 V, IS = -0.5 A,
dIF/dt = 100 A/µs 40 ns
Irr Reverse Recovery Current 2.8 A
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDS0610.SAM