Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-264","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Series":"-","Standard Package":"25","Supplier Device Package":"TO-264 (IXTK)","Datasheets":"IXT(K,X)17N120L","Rds On (Max) @ Id, Vgs":"900 mOhm @ 8.5A, 20V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"700W","Package / Case":"TO-264-3, TO-264AA","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"1200V (...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-264","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Series":"-","Standard Package":"25","Supplier Device Package":"TO-264 (IXTK)","Datasheets":"IXT(K,X)17N120L","Rds On (Max) @ Id, Vgs":"900 mOhm @ 8.5A, 20V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"700W","Package / Case":"TO-264-3, TO-264AA","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"1200V (...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"17(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"1200(V)","Power Dissipation":"700(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-264","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"17 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"34 A","Channel Type":"N-CHANN...