© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1200 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C17 A
IDM TC= 25°C, pulse width limited by TJM 34 A
IATC= 25°C 8.5 A
EAS TC= 25°C 2.5 J
PDTC= 25°C 700 W
TJ-55...+150 °C
TJM 150 °C
Tstg -55...+150 °C
TL1.6mm (0.063 in.) from case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting torque (IXTK) 1.13/10 Nm/lb.in.
FCMounting Force (IXTX) 20..120 / 4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
IXTK17N120L
IXTX17N120L
VDSS = 1200V
ID25 = 17A
RDS(on) < 900mΩΩ
ΩΩ
Ω
DS99615B(05/10)
LinearTM Power MOSFET
w/ Extended FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Guaranteed FBSOA
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXTX)
Tab
G
DS
TO-264 (IXTK)
S
G
D
Tab
Features
zDesigned for Linear Operations
zGuaranteed FBSOA at 60ºC
zAvalanche Rated
zLow RDS(on) HDMOSTM Process
zMolding Epoxies Meet UL94 V-0
Flammability Classification
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zProgrammable Loads
zCurrent Regulators
zDC-DC Convertors
zBattery Chargers
zDC Choppers
zTemperature and Lighting Controls
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1200 V
VGS(th) VDS = VGS, ID = 250μA 3.0 6.0 V
IGSS VGS = ±30V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 2 mA
RDS(on) VGS = 20V, ID = 0.5 • IDSS, Note 1 900 mΩ
IXTK17N120L
IXTX17N120L
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXTX) Outline
TO-264 (IXTK) Outline
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • IDSS, Note 1 3.5 5.0 6.5 S
Ciss 8300 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 520 pF
Crss 90 pF
td(on) 42 ns
tr 31 ns
td(off) 110 ns
tf 83 ns
Qg(on) 155 nC
Qgs VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS 41 nC
Qgd 60 nC
RthJC 0.18 °C/W
RthCS 0.15 °C/W
Safe Operating Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA VDS = 800V, ID = 0.3A, TC = 60°C, tP = 3s 240 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 17 A
ISM Repetitive, Pulse Width Limited by TJM 50 A
VSD IF = 17A, VGS = 0V, Note 1 1.5 V
trr 1830 ns
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
RG = 2Ω (External)
IF = IS, -di/dt = 100A/μs, VR = 100V
© 2010 IXYS CORPORATION, All Rights Reserved
IXTK17N120L
IXTX17N120L
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
0
2
4
6
8
10
12
14
16
18
02468101214
V
DS
- V olt s
I
D
- Ampe res
V
GS
= 20V
14V
10
V
8
V
9
V
12
V
7
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30
V
DS
- V olt s
I
D
- Amperes
V
GS
= 20V
16V
14V
8
V
7
V
9
V
10
V
12V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30
V
DS
- V olt s
I
D
- Ampe res
V
GS
= 20V
14V
12V
7
V
10V
9V
8V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 8.5A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 20V
I
D
= 17A
I
D
= 8. 5A
Fig. 5. R
DS(on)
Normalized to I
D
= 8.5A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0 5 10 15 20 25 30 35
I
D
- A mp e res
R
DS(on)
- Normali zed
V
GS
= 20V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. Maximu m D r ai n C u r r en t vs.
Case Temperature
0
2
4
6
8
10
12
14
16
18
20
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXTK17N120L
IXTX17N120L
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
0
2
4
6
8
10
12
14
16
18
20
4 5 6 7 8 9 10 11 12
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
1
2
3
4
5
6
7
8
9
0 2 4 6 8 10 12 14 16 18 20
I
D
- Amperes
g
f s
- Siemens
T
J
= - 4 0ºC, 25ºC, 12 5ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
5
10
15
20
25
30
35
40
45
50
0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
SD
- Vo lts
I
S
- Ampere s
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar g e
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 600V
I
D
= 8.5A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lt s
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximu m Tr an si en t Thermal I mp ed an ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2010 IXYS CORPORATION, All Rights Reserved
IXTK17N120L
IXTX17N120L
IXYS REF: T_17N120L(8N)02-18-09-B
Fi g . 13. F o r war d -B i as Safe Op er ati n g Area
@ T
C
= 25ºC
0.1
1
10
100
10 100 1000 10000
V
DS
- V o lt s
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pul s e
25µs
1ms
100µs
R
DS(on)
Limit
10ms
100ms
DC
Fi g . 14. F o r war d -B i as Safe Op er ati n g Area
@ T
C
= 60ºC
0.1
1
10
100
10 100 1000 10000
V
DS
- Vo lts
I
D
- Amperes
T
J
= 150ºC
T
C
= 60ºC
Sing le Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC 100ms
