IXTK17N120L
IXTX17N120L
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXTX) Outline
TO-264 (IXTK) Outline
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • IDSS, Note 1 3.5 5.0 6.5 S
Ciss 8300 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 520 pF
Crss 90 pF
td(on) 42 ns
tr 31 ns
td(off) 110 ns
tf 83 ns
Qg(on) 155 nC
Qgs VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS 41 nC
Qgd 60 nC
RthJC 0.18 °C/W
RthCS 0.15 °C/W
Safe Operating Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA VDS = 800V, ID = 0.3A, TC = 60°C, tP = 3s 240 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 17 A
ISM Repetitive, Pulse Width Limited by TJM 50 A
VSD IF = 17A, VGS = 0V, Note 1 1.5 V
trr 1830 ns
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
RG = 2Ω (External)
IF = IS, -di/dt = 100A/μs, VR = 100V