Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"TrenchMV\u2122","Standard Package":"50","Supplier Device Package":"TO-263 (IXTA)","Datasheets":"IXT(A,P)180N10T","Rds On (Max) @ Id, Vgs":"6.4 mOhm @ 25A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"480W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"D2PAK SOT427","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"TrenchMV\u2122","Standard Package":"50","Supplier Device Package":"TO-263-7 (IXTA..7)","Datasheets":"IXTA180N10T7","Rds On (Max) @ Id, Vgs":"6.4 mOhm @ 25A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"480W","Package / Case":"TO-263-7, D\u00b2Pak (6 Lea...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"480(W)","Continuous Drain Current":"180(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"750 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"180 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0064 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"450 A","Channel Type":"N-CHANNEL","FET Te...

{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"750 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"180 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0064 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"450 A","Channel Type":"N-CHANNEL","FET Te...