© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 100 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ100 V
VGSM Transient ± 30 V
ID25 TC= 25°C 180 A
ILRMS Lead Current limit, RMS 75 A
IDM TC= 25°C, pulse width limited by TJM 450 A
IAR TC= 25°C25 A
EAS TC= 25°C 750 mJ
PDTC= 25°C 480 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062in.) from case for 10s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque (TO-220) 1.13/10 Nm/lb.in
Weight TO-263 2.5 g
TO-220 3.0 g
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA180N10T
IXTP180N10T
VDSS = 100V
ID25 = 180A
RDS(on) ≤ ≤
≤ ≤
≤ 6.4mΩΩ
ΩΩ
Ω
TO-263 (IXTA)
TO-220 (IXTP)
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 100 V
VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V
IGSS VGS = ± 20V, VDS = 0V ± 100 nA
IDSS VDS = VDSS 5 μA
VGS = 0V TJ = 150°C 100 μA
RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 5.7 6.4 mΩ
Features
zUltra-low On Resistance
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
z175 °C Operating Temperature
Advantages
zEasy to mount
zSpace savings
zHigh power density
Applications
zAutomotive
- Motor Drives
- 42V Power Bus
- ABS Systems
zDC/DC Converters and Off-line UPS
zPrimary Switch for 24V and 48V
Systems
zDistributed Power Architechtures
and VRMs
zElectronic Valve Train Systems
zHigh Current Switching Applications
zHigh Voltage Synchronous Recifier
D
G
DS99651A(3/08)
S
GS
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA180N10T
IXTP180N10T
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS= 10V, ID = 60A, Note 1 70 110 S
Ciss 6900 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 923 pF
Crss 162 pF
td(on) 33 ns
tr 54 ns
td(off) 42 ns
tf 31 ns
Qg(on) 151 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A 39 nC
Qgd 45 nC
RthJC 0.31 °C/W
RthCH TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 180 A
ISM Repetitive, pulse width limited by TJM 450 A
VSD IF = 25A, VGS = 0V, Note 1 0.95 V
trr 72 ns
IRM 5.1 A
QRM 0.18 μC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-263 (IXTA) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
TO-220 (IXTP) Outline
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be
5mm or less from the package body.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A
RG = 3.3Ω (External)
IF = 90A, VGS = 0V
-di/dt = 100A/μs
VR = 0.5 • VDSS
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
© 2008 IXYS CORPORATION, All rights reserved
IXTA180N10T
IXTP180N10T
Fig. 1. Outpu t C h ar acteri sti cs
@ 25ºC
0
20
40
60
80
100
120
140
160
180
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
DS
- Volt s
I
D
- A mp ere s
V
GS
= 10V
9V
8V
7V
6V
Fig. 2. Extended Output Characteristics
@ 25º C
0
25
50
75
100
125
150
175
200
225
250
275
300
01234567
V
DS
- Volt s
I
D
- A m peres
V
GS
= 10V
9V
8V
7V
6V
Fi g . 3. Outp u t C h ar acter i sti cs
@ 150ºC
0
20
40
60
80
100
120
140
160
180
0.00.40.81.21.62.02.42.8
V
DS
- Volt s
I
D
- A mp ere s
V
GS
= 10V
9V
8V
5V
7V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 90A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Cent igrade
R
DS(on)
- N orma lize d
V
GS
= 10V
I
D
= 180A
I
D
= 90A
Fig. 5. R
DS(on)
Normalized to I
D
= 90A Value
vs. Drain Current
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0 50 100 150 200 250 300
I
D
- Amp eres
R
DS(on)
- N orma lize d
V
GS
= 10V
15V
- - -
-
T
J
= 175ºC
T
J
= 25ºC
Fi g . 6. D r ain C u r r ent vs. C ase Temp er atu r e
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
T
C
- Deg rees Centigrade
I
D
- Am peres
External Lead Curr ent Limit
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA180N10T
IXTP180N10T
Fig. 7. Input Admittance
0
25
50
75
100
125
150
175
200
225
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volt s
I
D
- A m peres
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Tra n scon d u ct an ce
0
15
30
45
60
75
90
105
120
135
150
0 25 50 75 100 125 150 175 200 225 250
I
D
- Amp eres
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Dio de
0
25
50
75
100
125
150
175
200
225
250
275
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volt s
I
S
- Am peres
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Ch ar g e
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160
Q
G
- NanoCo ulomb s
V
GS
- V o lts
V
DS
= 50V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lt s
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operati ng Area
0.1
1.0
10.0
100.0
1,000.0
1 10 100
V
DS
- Volt s
I
D
- A mp ere s
TJ = 175ºC
TC = 25ºC
Single Pulse
25µs
1ms 100µs
10ms
DC, 100ms
R
DS(
on
)
Limit
© 2008 IXYS CORPORATION, All rights reserved
IXTA180N10T
IXTP180N10T
Fig. 14. Resistive Turn-on
Rise T ime vs. Drain Current
10
15
20
25
30
35
40
45
50
55
60
65
70
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
r
- Na nose cond s
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 15. R e si stive Tur n-on
Switchi n g Ti mes v s. Gate R esistan ce
0
20
40
60
80
100
120
140
160
180
4 6 8 101214161820
R
G
- Oh ms
t
r
- Nan oseco nds
30
35
40
45
50
55
60
65
70
75
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V I
D
= 50A
I
D
= 25A
Fi g. 16. R esi s ti ve Tur n -off
Swi tch i n g Times vs. Ju n cti o n Temp er atu r e
30
31
32
33
34
35
36
37
38
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Na nose cond s
40
43
46
49
52
55
58
61
64
t
d(off)
- Na nose cond s
t
f
t
d(off)
- - - -
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 50V
25A < I
D
< 50A
I
D
= 25A, 50A
Fi g . 17. R esi sti ve Tur n -o ff
Switch i n g Times vs. D r ai n C u r r en t
30
31
32
33
34
35
36
37
38
25 30 35 40 45 50
I
D
- Amperes
t
f
- Na nose cond s
40
43
46
49
52
55
58
61
64
t
d(o ff)
- Na nose cond s
t
f
t
d(off)
- - - -
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 13. R esi sti ve Tu r n-on
Ri se Ti me vs. Junction Temper atu r e
10
15
20
25
30
35
40
45
50
55
60
65
70
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
Fig. 18. R esi sti ve Tu r n -o ff
Switchi n g Ti mes vs. Gate Resistan ce
20
40
60
80
100
120
140
160
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
f
- Na nose cond s
40
70
100
130
160
190
220
250
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 25A, 50A
25A < I
D
< 50A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA180N10T
IXTP180N10T
IXYS REF: T_180N10T(61) 2-02-07-B
Fig. 19. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
