© 2018 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 175C 100 V
VDGR TJ= 25C to 175C, RGS = 1M100 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C (Chip Capability) 180 A
IL(RMS) External Lead Current Limit 120 A
IDM TC= 25C, Pulse Width Limited by TJM 450 A
IATC= 25C25 A
EAS TC= 25C 750 mJ
PDTC= 25C 480 W
TJ-55 ... +175 C
TJM 175 C
Tstg -55 ... +175 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-263 2.5 g
TO-220 3.0 g
TrenchTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA180N10T
IXTP180N10T
VDSS = 100V
ID25 = 180A
RDS(on)
6.4m
DS99651B(11/18)
G = Gate D = Drain
S = Source Tab = Drain
TO-263
(IXTA)
G
S
D (Tab)
TO-220
(IXTP)
D (Tab)
S
GD
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250A 100 V
VGS(th) VDS = VGS, ID = 250A 2.5 4.5 V
IGSS VGS = 20V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 5 A
TJ = 150C 100A
RDS(on) VGS = 10V, ID = 25A, Notes 1& 2 5.7 6.4 m
Features
Ultra-Low On Resistance
Avalanche Rated
Low Package Inductance
- Easy to Drive and to Protect
175C Operating Temperature
Fast Intrinsic Diode
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA180N10T
IXTP180N10T
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 70 110 S
Ciss 6900 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 923 pF
Crss 162 pF
td(on) 33 ns
tr 54 ns
td(off) 42 ns
tf 31 ns
Qg(on) 151 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A 39 nC
Qgd 45 nC
RthJC 0.31C/W
RthCH TO-220 0.50 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 180 A
ISM Repetitive, Pulse Width Limited by TJM 450 A
VSD IF = 25A, VGS = 0V, Note 1 0.95 V
trr 72 ns
IRM 5.1 A
QRM 0.18 μC
Notes: 1. Pulse test, t 300s; duty cycle, d  2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A
RG = 3.3 (External)
IF = 90A, VGS = 0V
-di/dt = 100A/s, VR = 50V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e c
e1
e1 3X b2
e 3X b
EJECTOR
PIN
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
23
4
L3
A2
A1
e
ce
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
0.12 [3.0]
© 2018 IXYS CORPORATION, All rights reserved
IXTA180N10T
IXTP180N10T
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
20
40
60
80
100
120
140
160
180
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
50
100
150
200
250
300
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
6V
8V
Fig. 3. Output Characteristics @ T
J
= 150
o
C
0
20
40
60
80
100
120
140
160
180
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
5V
7V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 90A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 180A
I
D
= 90A
Fig. 5. R
DS(on)
Normalized to I
D
= 90A Value vs.
Drain Current
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0 50 100 150 200 250 300
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
T
J
= 175
o
C
T
J
= 25
o
C
Fig. 6. Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA180N10T
IXTP180N10T
Fig. 7. Input Admittance
0
25
50
75
100
125
150
175
200
225
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
15
30
45
60
75
90
105
120
135
150
0 50 100 150 200 250
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
25
o
C
150
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
110100
V
DS
- Volts
I
D
- Amperes
T
J
= 175
o
C
T
C
= 25
o
C
Single Pulse
25μs
1ms
100μs
10ms
DC, 100ms
R
DS(
on
)
Limit
External Lead
Current Limit
© 2018 IXYS CORPORATION, All rights reserved
IXTA180N10T
IXTP180N10T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
10
20
30
40
50
60
70
80
24 28 32 36 40 44 48 52
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 125oC
T
J
= 25oC
R
G
= 3.3Ω V
GS
= 10V
V
DS
= 50V
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
160
180
4 6 8 101214161820
R
G
- Ohms
t
r
- Nanoseconds
30
35
40
45
50
55
60
65
70
75
t
d(on)
- Nanoseconds
t
r
t
d(on)
T
J
= 125oC, V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
30
31
32
33
34
35
36
37
38
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
43
46
49
52
55
58
61
64
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 50V
25A < I
D
< 50A
I
D
= 25A, 50A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
30
31
32
33
34
35
36
37
38
25 30 35 40 45 50
I
D
- Amperes
t
f
- Nanoseconds
40
43
46
49
52
55
58
61
64
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 50V
T
J
= 125oC
T
J
= 25oC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
10
20
30
40
50
60
70
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3Ω V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
20
40
60
80
100
120
140
160
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
f
- Nanoseconds
40
70
100
130
160
190
220
250
t
d(off)
- Nanoseconds
t
f
t
d(off)
T
J
= 125oC, V
GS
= 10V
V
DS
= 50V
I
D
= 25A, 50A
25A < I
D
< 50A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA180N10T
IXTP180N10T
IXYS REF: T_180N10T (61)3-07-08-C
Fig. 19. Maximum Transient Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.