Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5.5V @ 250\u00b5A","Series":"Polar\u2122","Standard Package":"50","Supplier Device Package":"TO-263 (IXTA)","Datasheets":"IXT(A,I,P) 12N50P","Rds On (Max) @ Id, Vgs":"500 mOhm @ 6A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"200W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab),...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Series":"-","Package / Case":"*","Supplier Device Package":"*","Datasheets":"IXTx12N65X2","Rds On (Max) @ Id, Vgs":"300 mOhm @ 6A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"180W","Standard Package":"50","Drain to Source Voltage (Vdss)":"650V","Current - Continuous Drain (Id) @ 25\u00b0C":"12A (Tc)","Input Capacitance ...

{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"600 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Tech...