© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C12 A
IDM TC= 25°C, Pulse Width Limited by TJM 30 A
IATC= 25°C12 A
EAS TC= 25°C 600 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 200 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062in.) from Case for 10s 300 °C
Tsold Plastic Body for 10 Seconds 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXTA12N50P
IXTP12N50P
VDSS = 500V
ID25 = 12A
RDS(on) ≤≤
≤≤
≤ 500mΩΩ
ΩΩ
Ω
DS99322G(04/10)
G = Gate D = Drain
S = Source Tab = Drain
TO-263 AA (IXTA)
GDS
TO-220AB (IXTP)
D (Tab)
GS
D (Tab)
PolarTM
Power MOSFET
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 500 V
VGS(th) VDS = VGS, ID = 250μA 3.0 5.5 V
IGSS VGS = ± 30V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V 5 μA
TJ = 125°C 250 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 500 mΩ
Features
zInternational Standard Packages
zDynamic dv/dt Rating
zAvalanche Rated
zFast Intrinsic Rectifier
zLow QG
zLow RDS(on)
zLow Drain-to-Tab Capacitance
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zUninterrupted Power Supplies
zAC Motor Drives
zHigh Speed Power Switching
Applications
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA12N50P
IXTP12N50P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 7.5 13 S
Ciss 1830 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 182 pF
Crss 16 pF
td(on) 22 ns
tr 27 ns
td(off) 65 ns
tf 20 ns
Qg(on) 29 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 11 nC
Qgd 10 nC
RthJC 0.62 °C/W
RthCH TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 12 A
ISM Repetitive, Pulse Width Limited by TJM 48 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 2.8 μC
IRM 18.2 A
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Time
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
TO-263 Outline
IF = 6A, -di/dt = 150A/μs,
VR = 100V, VGS = 0V
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA12N50P
IXTP12N50P
Fi g . 1. Ou tp u t C h ar acter i sti cs @ TJ = 25ºC
0
2
4
6
8
10
12
01234567
V
DS
- V olt s
I
D
- Amperes
V
GS
= 10V
7V
6V
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
0
4
8
12
16
20
24
28
32
0 5 10 15 20 25 30
V
DS
- V olt s
I
D
- Am pere s
V
GS
= 10V
7V
6V
8V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ TJ = 125ºC
0
2
4
6
8
10
12
0123456789101112
V
DS
- V olt s
I
D
- Am pere s
V
GS
= 10V
5V
7V
6V
Fig. 4. RDS(on) Normalized to ID = 6A Valu e vs.
Junction Tem perature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 12A
I
D
= 6A
Fig. 5. RDS(on) Normalized to ID = 6A Valu e vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0 5 10 15 20 25 30
I
D
- Amperes
R
DS(on)
- Normalized
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
Fi g . 6. Maximu m Dr ai n C u rren t vs.
Case Temp er atu r e
0
2
4
6
8
10
12
14
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Am pere s
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA12N50P
IXTP12N50P
Fig. 7. Input Admittance
0
2
4
6
8
10
12
14
16
18
20
4.2 4.6 5.0 5.4 5.8 6.2 6.6 7.0 7.4
VGS - V olt s
ID - Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
4
8
12
16
20
24
28
0 2 4 6 8 10 12 14 16 18 20
ID - Am peres
g
f s - Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
5
10
15
20
25
30
35
40
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD - Volts
IS - Amperes
T
J
= 1 25ºC
T
J
= 25ºC
Fi g . 10. Ga te C h ar g e
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30
QG - NanoCoul ombs
VGS - Volts
V
DS
= 250V
I
D
= 6A
I
G
= 10mA
Fig. 11. Capaci tance
1
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
VDS - Volts
Capaci tance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. F o rwar d -B i as Safe Op er ati n g Area
1
10
100
10 100 1,000
VDS - Vol ts
ID - Amperes
100µs
1ms
10ms
RDS(on) Limit
TJ = 150ºC
TC = 25ºC
Single P ulse DC
25µs
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA12N50P
IXTP12N50P
IXYS REF: IXT_12N50P (4J)4-17-10-E
Fi g . 13. Maxi mu m Tran si en t Th er mal I mp ed an ce
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
