IXTA12N50P IXTP12N50P PolarTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 500V = 12A 500m TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 12 A IDM TC = 25C, Pulse Width Limited by TJM 30 A IA TC = 25C 12 A EAS TC = 25C 600 mJ dv/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 200 W D (Tab) TO-220AB (IXTP) G G = Gate S = Source -55 ... +150 C TJM 150 C Features Tstg -55 ... +150 C z 300 260 C C z 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Md Mounting Torque (TO-220) Weight TO-263 TO-220 z z z z z z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 500 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS = 30V, VDS = 0V IDSS V 5 A TJ = 125C RDS(on) V 100 nA VDS = VDSS, VGS = 0V VGS = 10V, ID = 0.5 * ID25, Notes 1, 2 D = Drain Tab = Drain International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance 250 A 500 m Easy to Mount Space Savings Applications z z z z z z (c) 2010 IXYS CORPORATION, All Rights Reserved D (Tab) Advantages z z 5.5 DS DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS99322G(04/10) IXTA12N50P IXTP12N50P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 7.5 VDS = 10V, ID = 0.5 * ID25, Note 1 TO-263 Outline 13 S 1830 pF 182 pF 16 pF 22 ns 27 ns 65 ns tf 20 ns Qg(on) 29 nC 11 nC 10 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Qgs Resistive Switching Time VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 10 (External) VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 0.62 C/W RthJC RthCH TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 12 A ISM Repetitive, Pulse Width Limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 6A, -di/dt = 150A/s, VR = 100V, VGS = 0V 300 ns C A 2.8 18.2 TO-220 Outline Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA12N50P IXTP12N50P Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 32 12 VGS = 10V VGS = 10V 28 10 ID - Amperes ID - Amperes 24 8V 7V 8 6 20 16 7V 12 4 8 2 6V 0 0 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature 12 2.6 VGS = 10V VGS = 10V 2.4 10 R DS(on) - Normalized 2.2 7V 8 ID - Amperes 6V 4 6 6V 4 2.0 I D = 12A 1.8 1.6 I D = 6A 1.4 1.2 1.0 0.8 2 0.6 5V 0.4 0 0 1 2 3 4 5 6 7 8 9 10 11 -50 12 -25 0 VDS - Volts 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 6A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 14 3.4 VGS = 10V 3.0 12 TJ = 125C 10 2.6 ID - Amperes R DS(on) - Normalized 25 2.2 1.8 1.4 8 6 4 TJ = 25C 1.0 2 0.6 0 0 5 10 15 20 ID - Amperes (c) 2010 IXYS CORPORATION, All Rights Reserved 25 30 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA12N50P IXTP12N50P Fig. 8. Transconductance Fig. 7. Input Admittance 20 28 18 TJ = - 40C 24 16 TJ = 125C 25C - 40C 12 20 g f s - Siemens ID - Amperes 14 10 8 25C 16 125C 12 6 8 4 4 2 0 0 4.2 4.6 5.0 5.4 5.8 6.2 6.6 7.0 7.4 0 2 4 6 8 VGS - Volts 10 12 14 16 18 20 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 10 9 35 VDS = 250V I D = 6A 8 I G = 10mA 30 25 VGS - Volts IS - Amperes 7 20 15 6 5 4 TJ = 125C 3 TJ = 25C 10 2 5 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5 VSD - Volts 10 15 20 25 30 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100 10,000 Ciss 1,000 100 Coss 10 Crss RDS(on) Limit ID - Amperes Capacitance - PicoFarads f = 1 MHz 25s 10 100s TJ = 150C TC = 25C Single Pulse 1 1ms DC 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 10ms 1,000 IXTA12N50P IXTP12N50P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - C / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: IXT_12N50P (4J)4-17-10-E