Datasheet.Directory

{"C(iss) Max. (F)":"5.0n","Absolute Max. Power Diss. (W)":"360","g(fs) Max, (S) Trans. conduct,":"18","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"110n","r(DS)on Max. (Ohms)":".25","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"104","I(GSS) Max. (A)":"200n","g(fs) Min. (S) Trans. conduct.":"11","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"13","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.5","V(GS)th Min. (V)":"2.0","Package":"TO-247AD","Military":"N","t...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"IXXH50N60C3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 4mA","Series":"PolarHV\u2122","Standard Package":"30","Supplier Device Package":"TO-247AD (IXFH)","Datasheets":"IXF(H,T,V)26N60P/PS","Rds On (Max) @ Id, Vgs":"270 mOhm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"460W","Package / Case":"TO-247-3","Mounting Type":"Throu...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"IXXH50N60C3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 4mA","Series":"HiPerFET\u2122","Standard Package":"30","Supplier Device Package":"TO-247AD (IXFH)","Datasheets":"IXF(H,T)26N60Q","Rds On (Max) @ Id, Vgs":"250 mOhm @ 13A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"360W","Package / Case":"TO-247-3","Mounting Type":"Through H...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"26(A)","Mounting":"Through Hole","Drain-Source On-Volt":"600(V)","Power Dissipation":"460(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-247AD","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL"...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1200 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"65 A","Channel Type":"N-CHANN...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"26 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"104 A","Channel Type":"N-CHANNEL"...