© 2002 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 600 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ600 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C26A
IDM TC= 25°C, pulse width limited by TJM 104 A
IAR TC= 25°C26A
EAR TC= 25°C45mJ
EAS TC= 25°C 1.5 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 360 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in) from case for 10 s 300 °C
MdMounting torque TO-247 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Features
lLow gate charge
lInternational standard packages
l
Epoxy meet UL 94 V-0, flammability
classification
lLow RDS (on) HDMOSTM process
lRugged polysilicon gate cell structure
lAvalanche energy and current rated
lFast intrinsic Rectifier
Advantages
lEasy to mount
lSpace savings
lHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250µA 600 V
VGS(th) VDS = VGS, ID = 4 mA 2.5 4.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
IDSS VDS = VDSS TJ = 25°C25µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 0.25 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
G = Gate D = Drain
S = Source TAB = Drain
98635D (6/02)
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
G
S
IXFH 26N60Q
IXFT 26N60Q VDSS = 600 V
ID25 = 26 A
RDS(on) = 0.25 ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 ID25, pulse test 14 22 S
Ciss 5100 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 560 pF
Crss 210 pF
td(on) 30 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 32 ns
td(off) RG = 2.0 Ω (External), 80 ns
tf16 ns
Qg(on) 150 200 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 34 nC
Qgd 80 nC
RthJC 0.35 K/W
RthCK TO-247 0.25 K/W
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
TO-268 Outline
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 26 A
ISM Repetitive; pulse width limited by T JM 104 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr 2 50 ns
QRM 1µC
IRM 10 A
IF = IS -di/dt = 100 A/µs, VR = 100 V
IXFH 26N60Q
IXFT 26N60Q
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
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