© 2006 IXYS All rights reserved
GDS
G = Gate D = Drain
S = Source TAB = Drain
DS99435E(12/06)
PolarHVTM
Power MOSFET VDSS = 600 V
ID25 =26 A
RDS(on) ≤≤
≤≤
≤270 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤200 ns
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 μA 600 V
VGS(th) VDS = VGS, ID = 4 mA 2.5 5.0 V
IGSS VGS = ±30 V, VDS = 0 V ±100 nA
IDSS VDS = VDSS 25 μA
VGS = 0 V TJ = 125°C 250 μA
RDS(on) VGS = 10 V, ID = 0.5 ID25 270 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 600 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ600 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC = 25°C26A
IDM TC = 25°C, pulse width limited by TJM 65 A
IAR TC = 25°C13A
EAR TC = 25°C40mJ
EAS TC = 25°C 1.2 J
dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS 10 V/ns
TJ ≤ 150°C, RG = 5 Ω
PDTC = 25°C 460 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
MdMounting torque (TO-3P&TO-247) 1.13/10 Nm/lb.in.
FCMounting force (PLUS220) 11..65/2.5..15 N/lb
Weight TO-247 6.0 g
TO-268 5.0 g
PLUS220 & PLUS220SMD 4.0 g
IXFH26N60P
IXFT26N60P
IXFV26N60P
IXFV26N60PS
TO-268 (IXFT)
GSD (TAB)
TO-247 (IXFH)
GSD (TAB)
PLUS220SMD (IXFV...S)
GS
D
PLUS220 (IXFV)
D (TAB)
Features
zFast Recovery diode
zUnclamped Inductive Switching (UIS)
rated
zInternational standard packages
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 26N60P IXFT 26N60P
IXFV 26N60P IXFV 26N60PS
Fig. 2. Extended Output C haracteristics
@ 25
º
C
0
6
12
18
24
30
36
42
48
54
60
0 3 6 9 12 15 18 21 24 27 30
V
D S
- Volt s
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 1. Output Characteristics
@ 2 5
º
C
0
4
8
12
16
20
24
01234567
V
D S
- Volt s
I
D
- Am pe res
V
GS =
10V
7V
5V
6V
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS = 20 V; ID = 0.5 ID25, pulse test 16 26 S
Ciss 4150 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 400 pF
Crss 27 pF
td(on) 25 ns
trVGS = 10 V, VDS = 0.5 ID25 27 ns
td(off) RG= 5 Ω (External) 75 ns
tf21 ns
Qg(on) 72 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 nC
Qgd 24 nC
RthJC 0.27 °C/W
RthCs (PLUS220 & TO-247) 0.21 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 26 A
ISM Repetitive 78 A
VSD IF = IS, VGS = 0 V, pulse test 1.5 V
trr IF = 25A, -di/dt = 100 A/μs 150 200 ns
IRM VR = 100V; VGS = 0 V 7 A
QRM 0.7 μC
Characteristic Curves
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
© 2006 IXYS All rights reserved
Fig. 3. Output Characteristics
@ 125
º
C
0
4
8
12
16
20
24
0246810121416
V
D S
- Volt s
I
D
- Amp ere s
V
GS
= 10V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to 0.5 I
D25
Value vs. Junctio n Temperature
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- No rma l i ze
d
I
D
= 26A
I
D
= 13 A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
3
6
9
12
15
18
21
24
27
30
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amp ere s
Fig. 5. R
DS(on)
Normalized to
0.5 I
D25
Value vs. I
D
0.8
1.2
1.6
2
2.4
2.8
3.2
0 102030405060
I
D
- Amperes
R
D S ( o n )
- N orma l i ze
d
T
J
= 125
º
C
T
J
= 25
º
C
V
GS
= 10V
Fig. 7. Input Admitta nce
0
5
10
15
20
25
30
35
40
45
50
4 4.5 5 5.5 6 6.5 7 7.5
V
G S
- Volt s
I
D
- Am peres
T
J
= 125
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30 35 40 45 50
I
D
- Amperes
g
f s
- Siem ens
T
J
= -4 0
º
C
25
º
C
125
º
C
IXFH 26N60P IXFT 26N60P
IXFV 26N60P IXFV 26N60PS
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 26N60P IXFT 26N60P
IXFV 26N60P IXFV 26N60PS
Fig. 11. Capac itanc e
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 1020304050607080
Q
G
- nanoCoul o mbs
V
G S
- Vo l t s
V
DS
= 300V
I
D
= 13 A
I
G
= 10 mA
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
10
20
30
40
50
60
70
80
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
S D
- Volts
I
S
- Ampe res
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 12. Maximum Transient Thermal Resistance
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R ( t h ) J C - ºC / W
© 2006 IXYS All rights reserved
TO-268 (IXFT) Outline TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
1 2 3
IXFH 26N60P IXFT 26N60P
IXFV 26N60P IXFV 26N60PS
PLUS220SMD (IXFV_S) Outline
PLUS220 (IXFV) Outline
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